2026-10-07T16:10:26Z https://moem.pensoft.net/oai.php

10.3897/j.moem.4.1.33240 2018-05-01 moem

National University of Science and Technology MISiS, Moscow, Russia author Kozlova, Nina S. https://orcid.org/0000-0003-4057-9718 JSC Fomos-Materials, Moscow, Russia author Buzanov, Oleg A. https://orcid.org/0000-0002-7532-5710 National University of Science and Technology MISiS, Moscow, Russia author Kasimova, Valentina M. National University of Science and Technology MISiS, Moscow, Russia author Kozlova, Anna P. https://orcid.org/0000-0002-3250-3206 National University of Science and Technology MISiS, Moscow, Russia author Zabelina, Evgeniya V. https://orcid.org/0000-0002-5844-5673 2018-05-01 2018-05-01 2018 Modern Electronic Materials 2452-1779 2452-2449 4 1 7 12 2018 10.1088/1748-0221/10/05/P05005 10.1109/TNS.2012.2233497 10.1016/j.ultramic.2016.01.003 10.1016/j.nima.2015.08.041 10.1109/NSSMIC.2013.6829685 10.1109/NSSMIC.2011.6154387 10.1111/j.1551-2916.2007.02123.x 10.1088/0022-3727/46/47/475302 10.1134/S1063774516030160 Shaskol’skaya M.P. Kristallografiya [Crystallography]. Moscow: Vysshaya shkola, 1984. 376 p. (In Russ.) 10.1107/S0567739476001551 10.1016/j.nima.2015.01.057 10.1016/j.optmat.2016.09.052 10.1016/j.cplett.2013.04.068 10.1103/PhysRevApplied.2.044009 10.1063/1.4867315 Kasimova V.M., Buzanov O.A., Kozlova N.S., Kozlova A.P. Scintillation material Gd3Al2Ga3O12:Се. Fundamental’nye problemy radioelektronnogo priborostroeniya = Fundamental Problems of Radio Electronic Instrument Making. 2015; 15(2): 79—82. (In Russ.) 10.1016/j.nima.2012.07.055 10.1016/j.nima.2015.05.052 10.1016/j.jcrysgro.2016.04.037 10.1109/URALCON.2017.8120724 Palik E. D. Handbook of optical constants of solids. N-Y.: Academic Press, 1998, 3224 p. Borisenko S.I., Revinskaya O.G., Kravchenko N.S., Chernov A.V. Pokazatel’ prelomleniya sveta i metody ego eksperimental’nogo opredeleniya [The refractive index of light and methods of its experimental determination]. Tomsk: Tomskii politekhnicheskii universitet, 2014. 146 p. (In Russ.) Stephenson D. Modeling variation in the refractive index of optical glasses: thesis. N-Y.: Rochester Institute of Technology, 1990, 163 p. Vavilov V.S. Deistvie izluchenii na poluprovodniki [Effect of radiation on semiconductors]. Moscow: Gosudarstvennoe izdatel’stvo fiziko-matematicheskoi literatury, 1963, 264 p. (In Russ.) 10.1016/j.optmat.2014.12.040 10.1016/j.jlumin.2015.05.015 10.1016/j.ceramint.2014.08.137 10.1016/j.jlumin.2016.05.015 Marcus P. Corrosion mechanism in theory and practice. N-Y: CRC Press, 2012, 930 p. 10.1103/PhysRevB.61.1817 10.1016/j.nima.2016.09.060 10.1016/j.spmi.2015.10.044 Jacob R., Isac J. Band gap energy profile of BSFT Ba0.6Sr0.4FexTi(1-x)O3-δ (x = 0.1). Int. J. Sci. Res. Publ. 2014; 4(12): 1–6. URL: http://www.ijsrp.org/research-paper-1214.php?rp=P363435 10.1016/S0167-577X(03)00395-1 Mishra V., Sagdeo A., Warshi K., Rai H.M., Saxena S.K., Kumar R., Sagdeo P.R. Metastable behavior of Urbach tail states in BaTiO3 across phase transition. arXiv: Condensed Matter., 2016. URL: https://arxiv.org/abs/1612.067 10.1109/URALCON.2017.8120681 10.3897/j.moem.4.1.33240 https://moem.pensoft.net/article/33240/ https://moem.pensoft.net/article/33240/download/pdf/ https://moem.pensoft.net/article/33240/download/xml/ New emerging high-energy radiation detection techniques are based on the use of rare-earth ion doped materials. There is a great demand for new inorganic scintillators for medical applications, including X-ray and g radiation detection. In these applications, the new scintillating materials must comply with the main requirements such as high optical quality, high light yield, short response time etc. Materials satisfying these requirements include Gd3Al2Ga3O12 : Ce (GAGG : Ce) scintillating single crystals. By now the optical characteristics of GAGG : Ce have been studied insufficiently. We have therefore measured the spectral reflectance and transmittance characteristics of these crystals using optical spectroscopy in the 200–750 nm range. We have also measured the absorbance and refractive indices and the extinction coefficients, and assessed the optical band gap for GAGG : Ce crystals. For measuring the refractive indices, we have used two spectrophotometric methods, i.e. by the measured Brewster angle and by the reflectance for low incidence angles, i.e., close to the normal. Based on the results we have drawn up the dispersion functions of the refractive indices. text/html en_US Modern Electronic Materials Gd3Al2Ga3O12:Ce scintillating single crystal transmission spectrophotometry absorption coefficient optical band gap reflection spectrophotometry refractive index extinction coefficient dispersion Optical characteristics of single crystal Gd3Al2Ga3O12 : Ce Research Article

10.3897/j.moem.4.1.31135 2018-05-01 moem

Laboratory for Developing New Materials and their Characterizations, University of Setif, Setif, Algeria author Berri, Saadi https://orcid.org/0000-0003-4392-9461 Laboratory of Electro-Mechanic Systems (LASEM), National School of Engineers of Sfax (ENIS) Univrsity of Sfax, Sfax, Tunisia author Chami, Sabah Department of Physics, Faculty of Sciences, University of Biskra, Biskra, Algeria author Attallah, Mourad Department of Physics, Faculty of Sciences, University of M’sila, M’sila, Algeria author Oumertem, Mouloud Laboratory for Developing New Materials and their Characterizations, University of Setif, Setif, Algeria author Maouche, Djamel 2018-05-01 2018-05-01 2018 Modern Electronic Materials 2452-1779 2452-2449 4 1 13 19 2018 10.1016/0079-6786(93)90004-B 10.1088/0953-8984/11/40/104 10.1088/0953-8984/12/38/306 10.1103/PhysRevLett.86.2443 10.1126/science.1125877 10.1006/jssc.2000.8939 10.1103/PhysRevB.59.11159 10.1016/j.jmmm.2013.12.049 10.1002/pssb.200461726 10.1063/1.2936304 10.1063/1.1493646 10.1021/ja0512576 10.1002/adma.200500737 10.1038/27167 10.1007/3-540-45258-3_12 10.1016/j.tsf.2016.07.042 10.1016/j.commatsci.2014.05.013 10.1016/j.jallcom.2013.10.043 10.1016/j.physleta.2015.09.028 10.1016/j.ssc.2013.09.029 10.1016/j.jmmm.2013.04.023 10.1016/j.jmmm.2012.10.020 10.1038/srep15010 10.1103/PhysRevB.67.094438 10.1007/s12034-016-1288-6 10.1016/j.jmmm.2015.03.025 Baud G., Capestan M. Sur des oxydes ternaires de structure Perovskite contenant du rhenium pentavalent. Bulletin de la Societe Chimique de France. 1969;3608–3612. Blaha P., Schwarz K., Madsen G.K.H., Kvasnicka D., Luitz J. WIEN2K, an Augmented Plane Wave + Local orbitals program for calculating crystal properties (Karlheinz Schwarz, Technische Universität, Wien, Austria, 2001), ISBN 3-9501031-1-2. 10.1063/1.1725697 10.1103/PhysRevLett.77.3865 10.1103/PhysRevB.44.943 10.1063/1.3574924 10.1103/PhysRevB.83.134406 10.1103/PhysRevB.54.2480 10.1103/PhysRevB.68.245113 10.1103/PhysRevB.54.1673 10.4208/cicp.190312.190712a 10.1016/S0921-4526(02)02464-X 10.1103/PhysRevB.67.172411 10.1103/PhysRevB.58.3212 10.1016/j.physb.2012.04.012 10.1103/PhysRevB.73.064424 10.1103/PhysRev.82.403 10.1103/PhysRev.100.675 10.1143/JPSJ.33.21 10.1103/PhysRev.118.141 10.1016/j.progsolidstchem.2011.02.001 10.1016/j.rinp.2017.06.040 10.1016/j.cjph.2017.11.001 10.3897/j.moem.4.1.31135 https://moem.pensoft.net/article/31135/ https://moem.pensoft.net/article/31135/download/pdf/ https://moem.pensoft.net/article/31135/download/xml/ The electronic structure and magneto-optic properties of the Sr2GdReO6 double perovskite were investigated using the full-potential linearized augmented plane wave (FPLAPW) method. Exchange correlation effects are treated using the generalized gradient approximations GGA, GGA + U and GGA + U + SOC approachs. At ambient conditions, these calculation predict a half-metallic character for Sr2GdReO6 material. The electronic band structures and density of states demonstrate that Sr2GdReO6 is HM with a magnetic moment of 9 µB/fu and HM flip gap of 1.82 eV. The half metallicity is attributed by the double-exchange interaction mechanism via the Gd(4f)–O(2p)–Re(t2g) π-bounding. These new double perovskite may become ideal candidate material for future spintronic applications. The analysis charge densities show that bonding character as a mixture of covalent and ionic nature. The optical properties are analyzed and the origin of some peaks in the spectra is described. Besides, the dielectric function ε(ω), refractive index n (ω) and extinction coefficient K (ω) for radiation up to 14 eV have also been reported. text/html en_US Modern Electronic Materials Double perovskite Half-metallic Magnetic properties Optical properties Electronic structure Density functional studies of magneto-optic properties of Sr2GdReO6 Research Article

10.3897/j.moem.4.1.33273 2018-05-01 moem

University of Kashmir, Srinagar, India author Want, Basharat Solid State Research Lab., Department of Physics, University of Kashmir, Srinagar, India author Bhat, Bilal Hamid 2018-05-01 2018-05-01 2018 Modern Electronic Materials 2452-1779 2452-2449 4 1 21 29 2018 H. Kojimain, Fundamental properties of hexagonal ferrites with magnetoplumbite structure, in: E.P. Wohlfarth (Ed.), Ferromagnetic materials, North Holland, Amsterdam, 1982. 305 p. R.A. McCurrie, Ferromagnetic Materials: Structure and Properties, Academic Press Limited, London (1994) 180–181 10.1016/0254-0584(93)90116-4 10.1063/1.372205 10.1109/20.312461 10.1016/S0304-8853(01)00857-5 10.1063/1.2794711J 10.1109/TMAG.2006.879888 10.1016/j.jallcom.2010.02.002 10.1016/j.jmmm.2007.04.028 10.1016/j.jallcom.2014.04.217 10.1002/1521-396X(200209)193:2%3C314::AID-PSSA314%3E3.0.CO;2-W 10.1016/j.jmmm.2007.11.014 10.1016/S0304-8853(01)00988-X 10.1016/j.scriptamat.2007.08.017 10.1016/j.jallcom.2012.02.088 10.1016/S0925-8388(03)00390-6 10.1016/j.matlet.2012.04.107 I. Sadiq, I. Ali, E.V. Rebrov, S. Naseem, M.N. Ashiq, M.U. Rana, Influence of Nd-Co Substitution on Structural, Electrical, and Dielectric Properties of X-Type Hexagonal Nanoferrites, J. Mater. Eng. Perform. (2013) 622–627. 10.1016/S0304-8853(03)00591-2 10.1016/S0925-8388(03)00545-0 10.1016/j.ssc.2006.03.020 10.1016/j.matchemphys.2013.05.063 10.1016/j.ceramint.2013.10.096 B.D. Cullity, C.D. Graham, Introduction to magnetic materials, Second edition, Wiley, Hoboken, New Jersey, 2009. 10.1051/jphysrad:0194800905018400 A.T. Aldred, P.H. Froehle, Temperature and field dependence of iron, Int. J. Magn. 2 (1972) 195. 10.1016/j.physb.2016.09.026 10.1016/j.jmmm.2016.03.066 10.1016/j.jmmm.2014.12.059 Reza Shams Alam, MahmoodMoradi, Mohammad Rostami, Hossein Nikmanesh, Razieh Moayedi, Yang Bai, Structural, magnetic and microwave absorption properties of doped Ba-hexaferrite nanoparticles synthesized by co-precipitation method, J. Magn. Magn. Mater. 381 (2015) 1–9. 10.1016/j.ceramint.2013.10.096 10.1016/j.materresbull.2011.11.053 J. Smit, H.J. Wijn, Ferrites, Philips Technical Library, Eindhoven, The Netherlands (10962), 1962, pp. 316–320. R. Skomki, J.M.D. Coey, Permanent magnetism, CRC Press, 1999. 416 p. 10.1016/j.jallcom.2012.08.122 Y. Huang, Ferromagnetic Materials, Press of University of Electronic Science and Technology of China, Chengdu, 1994. 10.1007/s10854-016-4549-7 10.1007/BF02706722 10.1007/s10854-013-1217-z 10.1016/j.ceramint.2012.12.089 10.1016/S0921-5107(02)00381-1 10.1063/1.4734002 10.1109/20.908842 10.1016/j.physleta.2005.06.099 10.1103/PhysRevB.2.3112 10.1007/BF00660983 10.1016/S0304-8853(99)00612-5 10.1016/S0304-8853(02)00446-8 10.1063/1.2404772 10.1016/j.jmmm.2010.07.033 10.3897/j.moem.4.1.33273 https://moem.pensoft.net/article/33273/ https://moem.pensoft.net/article/33273/download/pdf/ https://moem.pensoft.net/article/33273/download/xml/ A systematic investigation on the phase formation, magnetic, dielectric and impedance properties of strontium hexaferrites doped with Nd and Nd-Mg was performed. All ferrite samples were prepared by the citrate-precursor method and characterized with a combination of X-ray diffraction, Vibrating sample magnetometer and impedance analyser. XRD analysis confirms the magnetoplumbite structure with space group p63/mmc without any secondary phase. The lattice parameter ratio c/a lies in the range of 3.92 to 3.94 and shows that the prepared material exhibits M-type hexagonal structure. An increase in coercivity and a decrease in magnetization were observed for all the samples. Large value of coercivity suggests that these materials are useful in longitudinal recording media. Further, it was found that the value of magnetocrystalline anisotropy constant K1 decreases with the substitution of Nd and Nd-Mg. Measurement of dielectric loss and dielectric constant were performed as a function of temperature and frequency. Dielectric constant and ac conductivity of Sr0.95Nd0.05Mg0.05Fe11.95O19 is more as compared to Sr0.95Nd0.05Fe12O19 and SrFe12O19 for all frequencies. The value of grain boundary resistance (Rgb) of Sr0.95Nd0.05Fe12O19 is less as compared to SrFe12O19 and Sr0.95Nd0.05Mg0.05Fe11.95O19 and vice versa trend is observed in the value of capacitance of the grain boundary (Cgb) and in the values of relaxation time (τgb). text/html en_US Modern Electronic Materials strontium hexaferrite magnetization dielectric behavior Magnetic and dielectric characteristics of Nd and Nd-Mg substituted strontium hexaferrite Research Article

10.3897/j.moem.4.1.33270 2018-05-01 moem

Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk, Belarus author Kalanda, Nikolay https://orcid.org/0000-0001-7679-4968 2018-05-01 2018-05-01 2018 Modern Electronic Materials 2452-1779 2452-2449 4 1 1 5 2018 10.1088/0953-8984/19/2/023201 10.1103/PhysRevB.73.094419 10.1016/j.matchemphys.2005.03.060 10.1021/am5052125 10.1016/j.ssi.2013.03.005 10.1016/j.cap.2017.10.018 10.1088/0953-8984/17/41/012 10.1134/S0020168517010186 10.1111/j.1151-2916.2004.tb07730.x 10.1016/j.nimb.2005.12.033 10.1016/S0921-4526(02)00608-7 10.1103/PhysRevB.66.024409 10.1063/1.126518 10.1103/PhysRevLett.85.2549 10.1103/PhysRevB.64.180406 10.1016/j.jallcom.2008.06.100 10.1002/adma.200501277 10.1016/j.jssc.2009.04.016 10.1063/1.2048810 10.1016/j.jssc.2011.10.043 10.1107/S0021889895014920 Rodríguez-Carvajal J. Recent developments of the program FULLPROF. Commission on powder diffraction (IUCr). Newsletter, 2001, vol. 26, pp. 12–19. 10.1016/0040-6031(77)85001-6 10.1016/j.tca.2014.05.001 10.3897/j.moem.4.1.33270 https://moem.pensoft.net/article/33270/ https://moem.pensoft.net/article/33270/download/pdf/ https://moem.pensoft.net/article/33270/download/xml/ Polycrystalline Sr2FeMoO6-δ specimens have been obtained by solid state synthesis from partially reduced SrFeO2,52 and SrMoO4 precursors. It has been shown that during oxygen desorption from the Sr2FeMoO6-δ compound in polythermal mode in a 5%H2/Ar gas flow at different heating rates, the oxygen index 6-δ depends on the heating rate and does not achieve saturation at T = 1420 K. Oxygen diffusion activation energy calculation using the Merzhanov method has shown that at an early stage of oxygen desorption from the Sr2FeMoO6-δ compound the oxygen diffusion activation energy is the lowest Еа = 76.7 kJ/mole at δ = 0.005. With an increase in the concentration of oxygen vacancies, the oxygen diffusion activation energy grows to Еа = 156.3 kJ/mole at δ = 0.06. It has been found that the dδ/dt = f (Т) and dδ/dt = f (δ) functions have a typical break which allows one to divide oxygen desorption in two process stages. It is hypothesized that an increase in the concentration of oxygen vacancies Vo•• leads to their mutual interaction followed by ordering in the Fe/Mo-01 crystallographic planes with the formation of various types of associations. text/html en_US Modern Electronic Materials strontium ferromolybdate oxygen nonstoichiometry defect formation oxygen desorption Thermally stimulated oxygen desorption in Sr2FeMoO6-δ Research Article

10.3897/j.moem.4.1.33272 2018-05-01 moem

Department of Science and Humanities, SAMS engineering college and Technology, Chennai, India author Irfan, H. Loyola College, Chennai, India author Mohamed Racik, K Loyola College, Chennai, India author Anand, S. 2018-05-01 2018-05-01 2018 Modern Electronic Materials 2452-1779 2452-2449 4 1 31 40 2018 10.1016/j.jallcom.2010.07.155 10.1021/jp053375l 10.1007/s10948-014-2841-4 10.1007/s10948-016-3866-7 10.1166/asem.2015.1750 10.1021/cm9018106 10.1007/s10948-016-3465-7 10.1007/s10948-015-3089-3 10.1021/jp711566k 10.1021/ja0711009 10.1016/j.dyepig.2008.07.004 10.1016/S0925-388(99)00059-6 10.1016/S0925-8388(00)01262-7 10.1016/j.jallcom.2008.08.111 10.1016/j.jallcom.2008.01.018 10.1016/j.jallcom.2010.07.014 10.1021/cm001061z 10.1166/jnn.2016.10632 10.1166/jnn.2016.10621 10.1088/0959-5309/56/3/303 K. Ramakanth, Basic of diffraction and its application, I K International Publishing House, 2007. A.Jose, M.F.G. Rodriguez, Synthesis, Properties, and Applications of Oxide Nanomaterials, first ed., Wiley-Interscience, 2007. 10.1016/j.micromeso.2008.06.010 10.1016/0001-6160(53)90006-6 10.1016/j.physb.2010.07.020 10.1063/1.1699713 10.1166/jnn.2001.039 10.1016/S0921-5093(03)00572-0 10.1063/1.2182096 10.1016/j.matlet.2014.04.054 10.1166/jnn.2016.10616 10.1166/jnn.2015.9776 10.1007/s10948-014-2835-2 10.2320/matertrans.43.1696 10.1016/j.nimb.2008.02.036 10.1016/j.powtec.2012.03.033 10.3897/j.moem.4.1.33272 https://moem.pensoft.net/article/33272/ https://moem.pensoft.net/article/33272/download/pdf/ https://moem.pensoft.net/article/33272/download/xml/ CoAl2O4 nanoparticles were prepared by a sol-gel process using citric acid as chelating agent with different calcination temperatures of 600 to 900 °C. The crystalline spinel cubic phase was confirmed by X-ray diffraction results. High-resolution scanning electron microscopy (HRSEM) revealed that nanoparticles of CoAl2O4 morphology showed spherical forms with a certain degree of agglomeration. The Williamson-Hall (W-H) method and size-strain method to evaluate the size of crystallites and strain in the CoAl2O4 nanoparticles peak broadening were applied. Physical parameters such as strain and stress values were calculated for all XRD reflection peaks corresponding to the cubic spinel phase of CoAl2O4 in the range of 20 to 70° from the modified plot shape by W-H plot assuming a uniform deformation model (UDM), uniform stress deformation model (USDM), uniform deformation energy density model (UDEDM) and by the size-strain plot method (SSP). The CoAl2O4 NPs crystal size calculated on the W-H plots and the SSP method are in good agreement with the HRSEM Scherrer method. text/html en_US Modern Electronic Materials CoAl2O4 sol-gel synthesis strain analysis W-H analysis SSP method X-ray peak profile analysis of CoAl2O4 nanoparticles by Williamson-Hall and size-strain plot methods Research Article

10.3897/j.moem.4.2.33306 2018-06-01 moem

Rajasthan Technical University, Kota, India author Bhatia, Deepak Indian Institute of Technology Bombay, Mumbai, India author Roy, Sandipta Indian Institute of Technology Bombay, Mumbai, India author Nawaz, S. Rajasthan Technical University, Kota, India author Meena, R.S. Indian Institute of Technology Bombay, Mumbai, India author Palkar, V.R. 2018-06-01 2018-06-01 2018 Modern Electronic Materials 2452-1779 2452-2449 4 77 85 2018 10.1063/1.3636274 10.1002/adfm.201202799 10.1109/JSEN.2011.2182043 10.1016/j.tsf.2009.12.044 10.1016/S0040-6090(02)00248-1 10.1007/BF02692541 10.1063/1.4790298 10.1557/opl.2013.401 10.1109/PVSC.2008.4922628 10.1109/JPHOTOV.2013.2258191 10.1021/ma102817z 10.1016/j.solmat.2008.10.004 10.1038/nmat1868 10.1016/j.jallcom.2014.11.062 10.1016/j.jallcom.2014.02.128 10.1016/j.jallcom.2016.01.116 10.1063/1.3001800 10.1063/1.2994692 10.1016/j.tsf.2010.05.060 10.1063/1.125633 10.1088/0957-4484/15/5/038 Sarid D. Scanning force microscopy: with applications to electric. Magnetic and Atomic Forces. Oxford: Oxford University, 1994. Bonnell D. Scanning probe microscopy and spectroscopy: theory, techniques and applications. New York: Wiley-VCH, 2000. Serry F.M., Kjoller K., Thornton J.T., Tench R.J., Cook D. Electric force microscopy surface potential imaging and surface electric modifications with AFM. Bruker, 2010. URL: http://nano.boisestate.edu/wp-content/uploads/2010/12/Bruker-AN-27-EFM-Surface-Potential.pdf 10.1063/1.2904646 10.1063/1.123095 Wangsness R.K. Electromagnetic field. New York: Wiley, 1979. 10.1063/1.3078806 10.1016/j.mee.2016.06.003 10.1109/TNANO.2013.2290553 10.1088/0022-3727/43/36/365403 10.1063/1.3245390 10.1016/S0924-4247(02)00484-3 10.1016/j.tsf.2009.02.142 10.1103/PhysRevLett.71.3198 10.1007/s006040050093 Sze S.M. Physics of semiconductor devices. Chichester: Wiley, 1981. 10.1088/0143-0807/22/6/311 10.1143/JJAP.44.7582 10.3897/j.moem.4.2.33306 https://moem.pensoft.net/article/33306/ https://moem.pensoft.net/article/33306/download/pdf/ https://moem.pensoft.net/article/33306/download/xml/ In this paper, we report the charge trapping phenomena in zinc oxide (n-ZnO) and Bi0.7Dy0.3FeO3 (BDFO)/ZnO thin films deposited on p-type <100> conducting Si substrate. The significant change in contrast above the protrusions of ZnO verifies the possibility of heavy accumulation of injected holes in there. The ZnO and BDFO/ZnO films were characterized by the electrostatic force microscopy (EFM) to understand the phase dependence phenomenon on the bias supporting electron tunnelling. The EFM has an important role in the analysis of electrical transport mechanism characterization and electric charge distribution of local surface in nanoscale devices. It was observed that in BDFO/ZnO, the contrast of EFM images remains constant with the bias switching and that primarily indicates availability of trap sites to host electrons. The change in contrast over the protrusions of ZnO suggests that mobility of the electrical charge carriers may be through the grain boundary. The formation of these hole-trapped sites may be assumed by bond breaking phenomenon. text/html en_US Modern Electronic Materials BDFO/ZnO EFM multiferroics Electrostatic force microscopy analysis of Bi0.7Dy0.3FeO3 thin films prepared by pulsed laser deposition integrated with ZnO films for microelectromechanical systems and memory applications Research Article

10.3897/j.moem.4.2.33839 2018-06-01 moem

Universiti Brunei Darussalam, Gadong, Brunei author Begum, Feroza Universiti Brunei Darussalam, Gadong, Brunei author Suhaimi, Hazwani Universiti Brunei Darussalam, Gadong, Brunei author Shamsuddin, Norazanita Universiti Brunei Darussalam, Gadong, Brunei author Blundell, Martin Geoffrey University of the Ryukyus, Okinawa, Japan author Yoshinori Namihira, Yoshinori Namihira 2018-06-01 2018-06-01 2018 Modern Electronic Materials 2452-1779 2452-2449 4 53 58 2018 10.3897/j.moem.4.2.33839 https://moem.pensoft.net/article/33839/ https://moem.pensoft.net/article/33839/download/pdf/ https://moem.pensoft.net/article/33839/download/xml/ This paper investigates a supercontinuum generated high power highly nonlinear photonic crystal fiber for medical and optical communication applications. The full vector finite difference method with perfectly matched layer is used as an analysis tool. Numerical simulation results show that it is possible to achieve high nonlinear coefficient, near zero ultra-flattened dispersion, low confinement loss and supercontinuum spectrum with high power. Moreover, numerical results show that short length of the proposed photonic crystal fiber is achieved. The numerical simulation results of supercontinuum generation is conducted by solving the generalized nonlinear Schrödinger equation with the split-step Fourier method. It is observed adequate supercontinuum spectrum that broaden from 960 to 1870 nm by considering center wavelengths of 1.06, 1.31, and 1.55 μm into silica based index guiding photonic crystal fiber. This simulation results prove that the proposed design of a highly nonlinear photonic crystal fiber is a great solution for broad supercontinuum generation with high power. text/html en_US Modern Electronic Materials photonic crystal fiber nonlinear coefficient confinement loss supercontinuum spectruum Supercontinuum generated high power highly nonlinear photonic crystal fiber for medical and optical communications applications Research Article

10.3897/j.moem.4.2.33391 2018-06-01 moem

Technische Universität Dresden, Dresden, Germany author Suchaneck, Gunnar https://orcid.org/0000-0002-9440-2232 Technische Universität Dresden, Dresden, Germany author Felsberg, Linda Technische Universität Dresden, Dresden, Germany author Gerlach, Gerald 2018-06-01 2018-06-01 2018 Modern Electronic Materials 2452-1779 2452-2449 4 59 69 2018 10.5772/intechopen.68599 10.1080/01411594.2014.989225 10.1016/j.pmatsci.2012.02.001 10.1063/1.3501975 10.1002/adfm.201302386 10.1063/1.4891298 10.1063/1.3275013 10.1063/1.4866256 10.1115/1.4002896 10.1016/j.ijrefrig.2016.06.016 10.1016/j.ijheatmasstransfer.2014.01.043 10.1115/1.4034751 10.1080/01457632.2017.1358490 Bergmann T.L., Lavine A.S., Incropera F.P., Dewitt D.P. Fundamentals of Heat and Mass Transfer, 7th edition. Hoboken (NJ): John Wiley & Sons, 2011, 1050 p. 10.1126/science.aan5980 Carslaw H.S., Jaeger J.C. Conduction of Heat in Solids, 2nd Edition. Oxford: Oxford Science Publications, 1959, 510 p. Putley E.H. The pyroelectric detector. in Semiconducton and Semimetals. Vol. 5. R.K. Willardson and A.C. Beer (Eds.). New York: Academic Press, 1970, pp. 259–285. Kubo R. Thermodynamics. An Advanced Course with Problems and Solutions. Amsterdam; New York: North-Holland Pub. Co, 1968, Ch. 31, chapter 3 § 31, p. 186. Adby P.R. Applied Circuit Theory: Matrix and Computer Methods (Ellis Horwood Series in Electrical and Electronic Engineering). London: Ellis Horwood Ltd., 1980. 10.1364/AO.13.001171 10.1016/0040-6090(79)90310-9 10.1109/58.726450 10.1109/PROC.1978.10835 10.1063/1.4898599 Kell R.C., Hellicar N.J. Structural transitions in barium titanate-zirconate transducer materials. Acta Acustica united with Acustica. 1956; 6(2): 235–245. 10.1111/j.1151-2916.1982.tb10778.x 10.1063/1.1495069 10.1063/1.4811089 10.1063/1.2715522 10.1111/j.1151-2916.1950.tb14168.x 10.1063/1.4950796 10.1016/j.actamat.2004.07.028 10.1080/00150193.2017.1362231 10.1103/PhysRevB.73.144301 10.1016/0022-3697(67)90040-6 Lide D.R. (Ed.). CRC Handbook of Chemistry and Physics. Boca Raton (FL, USA): CRC Press. 2005. 2660 p. 10.1007/s10765-005-0003-4 10.1080/14786443608561668 10.1103/PhysRevLett.53.1837 10.1103/PhysRevLett.58.1680 10.1103/PhysRevLett.62.67 10.1016/j.tca.2004.02.008 10.1109/TMTT.2005.855141 10.1063/1.1828583 10.1063/1.126897 10.1007/s10854-009-9853-z 10.1063/1.1758301 Mantelli M.B.H., Yovanovich M.M. Thermal Contact Resistance, ch. 16. In: Spacecraft Thermal Control Handbook. Vol. I: Fundamental Technologies. El Segundo (CA): The Aerospace Press, 2002, 836 p. Iossel’ Yu.Ya., Kochanov E.S., Strunsky M.G. Rasshet elektrisheskoi emkosti [Calculation of Electrical Capacity]. Leningrad: Energoisdat,. 1981, 288 p. (In Russ.) 10.1016/j.ijheatmasstransfer.2005.09.039 10.1063/1.1499518 10.1016/j.ijheatmasstransfer.2013.10.042 10.1088/0960-1317/18/10/105012 10.1115/1.4027205 10.1063/1.3142866 10.1115/1.483144 10.1021/acsami.5b11796 10.1103/PhysRevB.95.184305 10.1063/1.3504213 10.1016/j.tca.2017.05.007 10.1109/ITHERM.2008.4544297 10.1117/12.294497 10.1117/12.140520 Shah R.K., London A.L. Laminar Flow Forced Convection in Ducts. New York: Academic Press, 1978, p. 205. 10.1007/s00542-016-2879-2 PSF-20cSt Pure Silicone Fluid. URL: http://www.clearcoproducts.com/pdf/low-viscosity/NP-PSF-20cSt.pdf (accessed: 28.03.2018) Tools and Basic Information for Design, Engineering and Construction of Technical Applications. URL: http://www.engineeringtoolbox.com (accessed: 28.03.2018) Application/Tech Guide – Galden Fluids. URL: http://www.swantek.com/html/products/galden.htm (accessed: 28.03.2018) 10.1080/10584580215151 10.1063/1.1145989 Information about Dow Corning® brand silicone encapsulants, Dow Corning Corp., 2005. URL: http://bdml.stanford.edu/twiki/pub/Rise/PDMSProceSS/PDMSdatasheet.pdf (accessed: 22.03.2018) 10.1088/0031-8949/90/9/094020 10.3897/j.moem.4.2.33391 https://moem.pensoft.net/article/33391/ https://moem.pensoft.net/article/33391/download/pdf/ https://moem.pensoft.net/article/33391/download/xml/ Materials properties affecting EC device operation are discussed based on an analytically tractable model of a layered EC refrigerator. Special attention was paid to thermal and interface thermal resistances. Estimates of the average cooling power of a stacked MEMS-based EC refrigerator were made. text/html en_US Modern Electronic Materials electrocaloric cooling heat transfer thermal resistance heat transfer fluids cooling power Materials issues in thermal modeling of thin film electrocaloric solid-state refrigerators Research Article

10.3897/j.moem.4.2.38545 2018-06-01 moem

North-Caucasus Federal University, Stavropol, Russia author Mar’ina, Ul’ana A. North-Caucasus Federal University, Stavropol, Russia author Vorob’ev, Viktor A. North-Caucasus Federal University, Stavropol, Russia author Mar’in, Alexandr P. 2018-06-01 2018-06-01 2018 Modern Electronic Materials 2452-1779 2452-2449 4 71 75 2018 10.3897/j.moem.4.2.38545 https://moem.pensoft.net/article/38545/ https://moem.pensoft.net/article/38545/download/pdf/ https://moem.pensoft.net/article/38545/download/xml/ Solid state synthesis of Perovskite-like calcium stannate structure activated with three rare-Earth metal ions Yb3+,Er3+,Но3+ has been studied. The formation of the CaSnO3 : Yb3+,Er3+,Но3+ luminescent structure requires the following synthesis conditions: anneal temperature 1250 °C and duration at least 18 h. The luminescent properties of the specimens have been studied under 960 nm semiconductor diode laser excitation. The luminescence spectra contain bands in the visible and IR spectral regions. Yb3+ ions have been shown to act predominantly as sensibilizers capable of transferring part of absorbed energy to Er3+ and Но3+ ions thus intensifying their respective luminescence peaks. Er3+ ions also transfer part of absorbed energy to Но3+ ions leading to an increase in the intensity of the 1194 and 1950 nm IR luminescence bands. A schematic of possible energy transitions in the CaSnO3 : Yb3+,Er3+,Но3+ system under 960 nm laser excitation has been suggested. The energy transfer mechanism between Yb3+,Er3+ and Но3+ions has been described in detail. The luminescence intensity of the luminophore has been studied at 994, 1194, 1550 and 1950 nm as a function of Но3+ion concentration. The peak intensity of the 1194 and 1950 nm bands is the highest at a Но3+ion concentration of 0.007 at.fr. It has been suggested to use the CaSnO3 : Yb3+,Er3+,Но3+ luminescent structure for radiation sources capable of converting 960 nm IR radiation to ~2000 nm IR radiation. text/html en_US Modern Electronic Materials luminescence infrared luminophores solid state synthesis rare-Earth elements CaSnO3: Yb3+, Er3+, Ho3+ system synthesis and study of its luminescence under IR excitation Research Article

10.3897/j.moem.4.2.38536 2018-06-01 moem

Centre for Material Reseaches «Photon», Aleksandrov, Russia author Gonik, Michael A. Technical University of Civil Engineering of Bucharest, Bucharest, Romania author Baltaretu, Florin 2018-06-01 2018-06-01 2018 Modern Electronic Materials 2452-1779 2452-2449 4 41 51 2018 10.3897/j.moem.4.2.38536 https://moem.pensoft.net/article/38536/ https://moem.pensoft.net/article/38536/download/pdf/ https://moem.pensoft.net/article/38536/download/xml/ The possibility of growing crystals with homogeneous impurity distribution over crystal height has been demonstrated in a study of segregation during silicon and germanium growth from thin melt layers using the submerged heater method. Numeric simulation of 200 mm diam. antimony-doped germanium crystallization has shown that, beginning from a 40 mm melt layer thickness, the exact problem solution with convection allowance is identical to the unidimensional heat exchange problem solution in the central ingot part. The conditions under which convection can be ignored in mass transport calculation are more rigorous: the melt layer height must be within 20 mm. In this case Tiller’s ratio can be used for calculating the longitudinal impurity distribution for predominantly diffusion-controlled mass transport pattern. Analysis of the existing attempts to describe the experimental crystal growth results using the simplified formulae shows that they only yield acceptable results if the actual growth rate or change in melt layer thickness during crystallization are taken into account, e.g. as in the formula suggested by Marchenko et al. One can therefore analytically describe the longitudinal impurity distribution in the ingot, e.g. B and P distribution in silicon, and recommend the degree of additional doping of the melt zone under the heater so that to provide a constant impurity concentration over the ingot height. Homogeneous material can be obtained after residual layer solidification in the end portion of the ingot if the growth rate is controlled through varying the cooling rate. text/html en_US Modern Electronic Materials mathematical simulation impurity diffusion directional crystallization submerged heater germanium multicrystalline silicon Problem of attaining constant impurity concentration over ingot height Research Article

10.3897/j.moem.4.3.39536 2018-09-01 moem

National University of Science and Technology, Moscow, Russia author Kobeleva, Svetlana P. https://orcid.org/0000-0002-0879-7013 National University of Science and Technology, Moscow, Russia author Anfimov, Ilya M. National University of Science and Technology, Moscow, Russia author Turutin, Andrei V. https://orcid.org/0000-0003-1090-3441 National University of Science and Technology, Moscow, Russia author Yurchuk, Sergey Yu. National University of Science and Technology, Moscow, Russia author Fomin, Vladimir M. 2018-09-01 2018-09-01 2018 Modern Electronic Materials 2452-1779 2452-2449 4 113 117 2018 10.3897/j.moem.4.3.39536 https://moem.pensoft.net/article/39536/ https://moem.pensoft.net/article/39536/download/pdf/ https://moem.pensoft.net/article/39536/download/xml/ We have analyzed phosphorus diffusion profiles in an In0.01Ga0.99As/In0.56Ga0.44P/Ge germanium structure during phosphorus co-diffusion with gallium for synthesis of the germanium subcell in multi-junction solar cells.. Phosphorus diffused from the In0.56Ga0.44P layer simultaneously with gallium diffusion into the heavily gallium doped germanium substrate thus determining the specific diffusion conditions. Most importantly, gallium and phosphorus co-diffusion produces two p–n junctions instead of one. The phosphorus diffusion profiles do not obey Fick’s laws. The phosphorus diffusion coefficient DP depth distribution in the specimen has been studied using two methods, i.e., the Sauer–Freise modification of the Boltzmann–Matano method and the coordinate dependent diffusion method. We show that allowance for the drift component in the coordinate dependent diffusion method provides a better DP agreement with literary data. Both methods suggest the DP tendency to grow at the heterostructure boundary and to decline closer to the main p–n junction. The DP growth near the surface p–n junction the field of which is directed toward the heterostructure boundary and its decline near the main p–n junction with an oppositely directed field, as well as the observed DP growth with the electron concentration, suggest that the negatively charged VGeP complexes diffuse in the heterostructure by analogy with one-component diffusion. text/html en_US Modern Electronic Materials phosphorus and gallium diffusion coefficient in silicon coordinate dependent diffusion vacancy diffusion model Coordinate dependent diffusion analysis of phosphorus diffusion profiles in gallium doped germanium Research Article

10.3897/j.moem.4.3.33282 2018-09-01 moem

Presidency College, Chennai, India author Suresh, Shanmugam The New College, Chennai, India author Nizam Mohideenb, M. SAS, Chennai, India author Vinitha, G. Presidency College, Chennai, India author Mohan Kumar, R 2018-09-01 2018-09-01 2018 Modern Electronic Materials 2452-1779 2452-2449 4 103 111 2018 10.3897/j.moem.4.3.33282 https://moem.pensoft.net/article/33282/ https://moem.pensoft.net/article/33282/download/pdf/ https://moem.pensoft.net/article/33282/download/xml/ A novel organic single crystal of p-toluidinium salicylate (PTSA) was grown by slow evaporation solution growth technique. The structure of grown crystal was determined from the single crystal X-ray diffraction analysis. The functional groups existing in PTSA crystal were accomplished by using Fourier transform infrared analysis. The optical transparency and band gap energy were estimated by utilizing the UV-Visible spectrum. Photoluminescence spectral studies revealed the photon excitation. The dielectric behavior of PTSA was investigated for different frequencies in a room temperature (308 K) environment. Third-order nonlinear optical susceptibility (χ3) of PTSA crystal was elucidated by Z-scan measurements. text/html en_US Modern Electronic Materials crystal structure dielectric AC conductivity and resistivity Z-scan analysis Synthesis, growth, structural, optical and electrical properties of novel organic single crystal: p-toluidinium salicylate Research Article

10.3897/j.moem.4.3.38763 2018-09-01 moem

V. I. Nikitin Institute of Chemistry, Academy of Sciences of the Republic of Tajikistan, Dushanbe, Tajikistan author Ganiev, Izatullo N. Khujand State University name after B. Ghafurov, Khujand, Tajikistan author Otajonov, Suhrob E. Tajik Technical University named after academic M. S. Osimi, Dushanbe, Tajikistan author Ibrohimov, Nasim F. Khujand State University name after B. Ghafurov, Khujand, Tajikistan author Mahmudov, M. 2018-09-01 2018-09-01 2018 Modern Electronic Materials 2452-1779 2452-2449 4 119 124 2018 10.3897/j.moem.4.3.38763 https://moem.pensoft.net/article/38763/ https://moem.pensoft.net/article/38763/download/pdf/ https://moem.pensoft.net/article/38763/download/xml/ The temperature dependence of the specific heat capacity and change in the thermodynamic functions of strontium-alloyed ultrahigh-purity aluminum base AK1M2 alloy have been studied in “cooling” mode over the 298.15–900 K range. Mathematical models describing the evolution of these properties of the alloys in the abovementioned temperature range with change in alloying addition concentration have been obtained. The heat capacity, enthalpy and entropy of the alloys increase with temperature, decrease with an increase in the alloying addition concentration to 0.5 wt.% and grow with a further increase in the alloying addition concentration. The Gibbs energy of the alloys has an inverse dependence: it decreases with an increase in temperature and grows with an increase in the alloying addition concentration to 0.5 wt.%. text/html en_US Modern Electronic Materials AK1M2 alloy strontium “cooling” mode heat capacity enthalpy entropy Gibbs energy Temperature dependence of the heat capacity and change in the thermodynamic functions of strontium-alloyed AK1M2 alloy Research Article

10.3897/j.moem.4.3.39540 2018-09-01 moem

Belarusian State University, Minsk, Belarus author Pashkevich, Alexey V. Belarusian State University, Minsk, Belarus author Fedotov, Alexander K. https://orcid.org/0000-0002-7008-847X Belarusian State University, Minsk, Belarus author Kasyuk, Yuliya V. National Practical Center of National Academy of Science of for Material Science, Minsk, Belarus author Bliznyuk, Liudmila A. Belarusian State University, Minsk, Belarus author Fedotova, Julia A. https://orcid.org/0000-0002-4471-0552 National Practical Center of National Academy of Science of for Material Science, Minsk, Belarus author Basov, Nikita A. Belarusian State University, Minsk, Belarus author Fedotov, Alexander S. https://orcid.org/0000-0002-3718-3184 Belarusian State University, Minsk, Belarus author Svito, Ivan A. P.О. Sukhoi Gomel State Technical University, Gomel, Belarus author Poddenezhny, Evgheni N. 2018-09-01 2018-09-01 2018 Modern Electronic Materials 2452-1779 2452-2449 4 87 95 2018 10.3897/j.moem.4.3.39540 https://moem.pensoft.net/article/39540/ https://moem.pensoft.net/article/39540/download/pdf/ https://moem.pensoft.net/article/39540/download/xml/ The search for new economically advantageous technologies of new zinc oxide based composite ceramic materials and the study of their structure and properties attract special attention today. These ceramics have a number of advantages as compared with materials prepared by more expensive technologies, due to the possibility to fabricate items having different shapes and sizes and particularly to vary their morphology, structure and phase composition. This allows controlling their functional properties by varying the powder particle size in charge, the temperatures, durations and atmospheres of synthesis and heat treatment, and the types of doping impurities in the ceramics. The structure and electrical properties of (FexOy)10(ZnO)90 ceramics (0 ≤ x ≤ 3; 1 ≤ y ≤ 4) synthesized in air using single- and two-stage synthesis methods have been studied. FeO, α-Fe2O3 and Fe3O4 powders or (α-Fe2O3 + FeO) mixture have been used for ZnO doping. X-ray diffraction, gamma-ray resonance spectroscopy and Raman spectroscopy data suggest that at average iron concentrations of 1–3 at.% the ceramic specimens contain at least three phases: the Zn1-δFeδO solid solution with a wurtzite structure, the ZnFe2O4 ferrite phase with a spinel structure and FexOy residual iron oxides which were used as doping impurities. Scanning electron microscopy and energy dispersion X-ray analysis have shown that the wurtzite phase grain size in the ceramic specimens decreases from several decades of microns for single-stage synthesis to submicron sizes for two- stage synthesis. We show that iron addition to ZnO induces a compression of the wurtzite phase crystal lattice, the compression of lattice magnitude being proportional to the oxygen content in the FexOy iron oxide doping agent. The temperature dependences of the electrical resistivity suggest that deep donor centers with an activation energy of about 0.37 eV are formed in the Zn1-δFeδO wurtzite phase. The temperature dependences of the electrical resistivity of electrons for undoped ZnO in the 6–300 K range and for doped (FeO)10(ZnO)90 ceramic synthesized in one stage exhibit a variable activation energy below 50 K which indicates a heavily disordered structure. text/html en_US Modern Electronic Materials zinc oxide ceramics iron doping phase structure electrical properties Structure and electrical properties of zinc oxide base iron doped ceramics Review Article

10.3897/j.moem.4.3.39454 2018-09-01 moem

JSC Fomos-Materials, Moscow, Russia author Buzanov, Oleg A. https://orcid.org/0000-0002-7532-5710 National University of Science and Technology MISiS, Moscow, Russia author Kozlova, Nina S. https://orcid.org/0000-0003-4057-9718 National University of Science and Technology MISiS, Moscow, Russia author Siminel, Nikita A. National University of Science and Technology MISiS, Moscow, Russia author Zabelina, Evgeniya V. https://orcid.org/0000-0002-5844-5673 2018-09-01 2018-09-01 2018 Modern Electronic Materials 2452-1779 2452-2449 4 97 101 2018 10.3897/j.moem.4.3.39454 https://moem.pensoft.net/article/39454/ https://moem.pensoft.net/article/39454/download/pdf/ https://moem.pensoft.net/article/39454/download/xml/ The optical and luminescent properties of undoped La3Ga5.5Ta0.5O14 lanthanum- gallium tantalate crystals grown in different atmospheres of pure argon gas and argon gas with different oxygen percentages have been studied. The optical absorption α(λ) spectra that characterize integral absorption and reflection have been measured in the 250–700 nm region. The spectral absorption functions have been calculated from the measured α(λ) spectra using the Kubelka–Munk formula. Luminescence has been observed in all the test specimens over a wide spectral region (375 to 650 nm) at 95 and 300 K. The luminescence spectra of the test crystals have a fine dispersed pattern represented by low-intensity discrete luminescence peaks. The 95 K luminescence peak maxima are more pronounced and shifted towards shorter wavelengths by ~16 nm (~0.1 eV) relative to the respective room temperature peaks. The crystal growth atmosphere has been demonstrated to largely affect the luminescent properties of the crystals: the higher the oxygen concentration in the growth atmosphere, the lower the luminescence intensity due to concentration quenching, the luminescence peak maxima shifting towards longer wavelengths. The positions of discrete luminescence peaks have been shown to correlate with the main 420 and 480 nm absorption bands with the respective ~20 nm (~0.2 eV) Stokes shift for crystals grown in different atmospheres. The luminescence in lanthanum-gallium tantalate crystals is a complex process involving several luminescence mechanisms. text/html en_US Modern Electronic Materials langatate lanthanum-gallium tantalate luminescence optical properties Luminescence in lanthanum-gallium tantalate Research Article

10.3897/j.moem.4.4.35063 2018-12-01 moem

Thiru.Vi.Ka.Government.Arts College, Thiruvarur, Tamil Nadu, India author Porkalai, V. Thiru.Vi.Ka.Government.Arts College, Thiruvarur, Tamil Nadu, India author Sathya, B. Thiru.Vi.Ka.Government.Arts College, Thiruvarur, Tamil Nadu, India author Benny Anburaj, D. Thiru.Vi.Ka.Government.Arts College, Thiruvarur, Tamil Nadu, India author Nedunchezhian, G TBML College, Porayar, Tamil Nadu, India author Joshua Gnanamuthu, S. Marthandam College of Engineering & Technology, Kanyakumari District, India author Meenambika, R. 2018-12-01 2018-12-01 2018 Modern Electronic Materials 2452-1779 2452-2449 4 135 141 2018 10.1016/0022-2313(96)00058-0 10.1016/0022-2313(95)00160-3 10.1016/0022-2313(96)00057-9 10.1007/s10854-016-6278-3 10.1016/S1387-7003(01)00322-7 Kulkarni S.S., Shirsat M.D. Optical and structural properties of zinc oxide nanoparticles. Int. J. Advanced Research in Physical Science, 2015; 2(1): 14–18. https://www.arcjournals.org/pdfs/ijarps/v2-i1/3.pdf 10.1063/1.4803063 10.1557/jmr.2016.343 10.1016/j.dit.2013.03.007 10.1016/j.jallcom.2006.06.045 10.1007/s12648-012-0182-3 Ganure K.A., A. Dhale L.A., T. Katkam V.T., Lohar K.S. Synthesis and characterization of lanthanum-doped Ni-Co-Zn spinel ferrites nanoparticles via normal micro- emulsion method. Int. J. Nanotechnology and Applications, 2017; 11(2): 189–195. 10.1002/pssa.200406856 CRC Handbook of Chemistry and Physics, 86th Edition. Ed. by D.R. Lide. Boca Raton (FL): CRC Press, 2005: 2544. 10.1007/s11051-007-9318-3 10.1021/ie2018383 Nedunchezhian G., Benny Anburaj D., Gokulakumar B., Johnson Jeyakumar S. Microwave synthesis of Au/Ag doped nano Hydroyapatile from deal Mussel shell. Int. J. Adv. Sci. Eng., 2017; 3(3): 353–356. http://mahendrapublications.com/Document/MP242436_Manuscript_2018_02_16_0248.pdf 10.17485/ijst/2016/v9i1/85776 10.1016/j.materresbull.2006.11.035 10.4028/www.scientific.net/NHC.17.101 10.1021/jp209267s 10.1021/ja028416v 10.1016/j.materresbull.2007.01.017 10.1007/s10854-016-5826-1 Rana S.B., Singh A., Singh S. Characterisation and optical studies of pure and Sb doped ZnO nanoparticles. Int. J. Nanoelectronics and Materials, 2013; 6: 45–57. 10.1021/jp049960o 10.1007/s10854-016-5823-4 10.3897/j.moem.4.4.35063 https://moem.pensoft.net/article/35063/ https://moem.pensoft.net/article/35063/download/pdf/ https://moem.pensoft.net/article/35063/download/xml/ Recently, transition metal (TM) and rare earth ion doped II–VI semiconductor nanoparticles have received much attention because such doping can modify and improve optical properties of II–VI semiconductor nanoparticles by large amount. In this study, undoped, La doped and La+Ag co-doped ZnO nano particles have been successfully synthesized by sol-gel method using the mixture of Zinc acetate dihydrate and ethanol solution. The powders were calcinated at 600 °C for 2 h. The effect of lanthanum and lanthanum-silver incorporation on the structure, morphology, optical and electrical conductivity were examined by X-ray diffraction (XRD), Scanning Electron Microscope (SEM), Energy Dispersive X-ray Absorption (EDAX), Fourier transform infrared spectroscopy (FTIR), UV and Photo Luminescence (PL) Characterization. The average particle size of the synthesized ZnO nanoparticles is calculated using the Scherrer formula and is found to be of less than 20 nm. Luminescences properties were found to be enhanced for the La and La+Ag co-doped ZnO nanoparticles. text/html en_US Modern Electronic Materials Lanthanum Photo Luminescence morphology structural Photoluminescences properties of lanthanum-silver co-doped ZnO nano particles Research Article

10.3897/j.moem.4.4.47197 2018-12-01 moem

National University of Science and Technology (MISiS), Moscow, Russia author Bublik, Vladimir T. National University of Science and Technology (MISiS), Moscow, Russia author Voronova, Marina I. https://orcid.org/0000-0003-0233-7902 National University of Science and Technology (MISiS), Moscow, Russia author Shcherbachev, Kirill D. https://orcid.org/0000-0003-4455-9730 2018-12-01 2018-12-01 2018 Modern Electronic Materials 2452-1779 2452-2449 4 125 134 2018 10.1007/978-3-642-74291-0 Bublik V.T., Milvidskii M.G. Non-stoichiometry, intrinsic point defects and microdefects in АIIIВV compounds. Pt 1. Materialovedenie, 1997; (2): 21–29. (In Russ.) 10.15407/mfint.38.01.0099 10.1002/pssa.201184253 10.1134/S1027451013030270 10.1002/pssa.201184254 Olikhovskii S.I., Skakunova O.S., Molodkin V.B., Len’ E.G., Ostafiychuk B.K., Pylypiv V.M. Simulation of reciprocal space maps for thin ion-implanted layers in yttrium-iron garnet films with defects. Proceedings of the International Conference: Nanomaterials: Applications and Properties. Sumy: Sumy State University, 2015; 4(1): 01PCSI05. URL: https://essuir.sumdu.edu.ua/bitstream/123456789/42642/1/Olikhovskii.pdf 10.1016/j.jnucmat.2018.07.062 10.1016/j.jnucmat.2015.11.030 10.1103/PhysRevB.1.1306 10.1103/PhysRevB.4.1041 Larson B.C. X-ray diffuse scattering near Bragg reflections for the study of clustered defects in crystalline materials. Ch. 9. In: R.I. Barabash, G.E. Ice, P.E.A. Turchi (Eds.), Diffuse Scattering and the Fundamental Properties of Materials. New York: Momentum Press, 2009: 139–160. 10.1088/0305-4608/3/2/010 10.1134/1.1620095 Worcester W. Diffuznoe rasseyanie rentgenovskikh luchei v kristallakh [Diffuse X-ray scattering in crystals. Moscow: Inostrannaya literatura, 1968, 288 p. (In Russ.) Datsenko L. I., Molodkin V. B., Osinovsky M. E. Dinamicheskoe rasseyanie rentgenovskikh luchei real’nymi kristallami [Dynamic X-ray scattering by real crystals]. Kiev: Naukova Dumka, 1988, 198 p. (In Russ.) Trinkaus H. Der reflexferne Teil der diffusen Streuung von Rontgenstrahlen an Rristallen mit stark verzerrender Defekten. Z. fur Angew. Phys., 1971; 31: 229–235. (In German) 10.1080/01418618908213863 Mezhenny M.V., Milvidsky M.G., Reznik V.Ya. Generation of dislocations from internal sources in heat treated dislocation-free silicon wafers under external loads. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering, 2007; (1): 11–15. (In Russ.) Bublik V.T., Voronova M.I., Shcherbachev K.D., Kolin N.G., Merkurisov D.I. Structural changes in InSb single crystals irradiated by neutrons. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering, 2003; (2): 68–73. (In Russ.) Bublik V.T., Voronova M.I., Shcherbachev K.D., Kolin N.G., Merkurisov D.I. Structural changes in neutrons irradiated InSb single crystals. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering, 2005; (2): 65–73. (In Russ.) Bublik V.T., Voronova M.I., Shcherbachev K.D., Boiko V.M., Kolin N.G., Merkurisov D.I., Milvidskii A.M. Anomalous change in the lattice period of InP single crystals irradiated by reactor neutrons. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering, 2004; (4): 67–72. (In Russ.) Bublik V.T., Voronova M.I., Shcherbachev K.D., Boiko V.M., Kolin N.G., Merkurisov D.I. The effect of reactor neutron irradiation and annealing on the structure of InP single crystals. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering, 2005; (3): 16–25. (In Russ.) 10.1007/s11445-008-2014-2 Bublik V.T., Shcherbachev K.D., Voronova M.I., Enisherlova K.L., Rusak T.F. Diagnostics of the defects formed at different stages of intrinsic getter formation in CZ-Si. Zavodskaya laboratoriya, 2008; 74: 28–34. (In Russ.) 10.3897/j.moem.4.4.47197 https://moem.pensoft.net/article/47197/ https://moem.pensoft.net/article/47197/download/pdf/ https://moem.pensoft.net/article/47197/download/xml/ The capabilities of X-ray diffuse scattering (XRDS) method for the study of microdefects in semiconductor crystals have been overviewed. Analysis of the results has shown that the XRDS method is a highly sensitive and information valuable tool for studying early stages of solid solution decomposition in semiconductors. A review of the results relating to the methodological aspect has shown that the most consistent approach is a combination of XRDS with precision lattice parameter measurements. It allows one to detect decomposition stages that cannot be visualized using transmission electron microscopy (TEM) and moreover to draw conclusions as to microdefect formation mechanisms. TEM-invisible defects that are coherent with the matrix and have smeared boundaries with low displacement field gradients may form due to transmutation doping as a result of neutron irradiation and relaxation of disordered regions accompanied by redistribution of point defects and annihilation of interstitial defects and vacancies. For GaP and InP examples, a structural microdefect formation mechanism has been revealed associated with the interaction of defects forming during the decomposition and residual intrinsic defects. Analysis of XRDS intensity distribution around the reciprocal lattice site and the related evolution of lattice constant allows detecting different decomposition stages: first, the formation of a solution of Frenkel pairs in which concentration fluctuations develop, then the formation of matrix-coherent microdefects and finally coherency violation and the formation of defects with sharp boundaries. Fundamentally, the latter defects can be precipitating particles. Study of the evolution of diffuse scattering iso-intensity curves in GaP, GaAs(Si) and Si(O) has allowed tracing the evolution of microdefects from matrix-coherent ones to microdefects with smeared coherency resulting from microdefect growth during the decomposition of non-stoichiometric solid solutions heavily supersaturated with intrinsic (or impurity) components. text/html en_US Modern Electronic Materials microdefects X-ray diffuse scattering single crystals semiconductors Capabilities of X-ray diffuse scattering method for study of microdefects in semiconductor crystals Research Article

10.3897/j.moem.4.4.47093 2018-12-01 moem

Kotelnikov Institute of Radioengineering and Electronics of RAS, Fryazino, Russia author Stepushkin, Mikhail V. National University of Science and Technology MISiS, Moscow, Russia author Kostishin, Vladimir G. https://orcid.org/0000-0001-5384-6331 Kotelnikov Institute of Radioengineering and Electronics of RAS, Fryazino, Russia author Sizov, Vladimir E. Kotelnikov Institute of Radioengineering and Electronics of RAS, Fryazino, Russia author Temiryazev, Alexei G. 2018-12-01 2018-12-01 2018 Modern Electronic Materials 2452-1779 2452-2449 4 163 166 2018 10.1063/1.1753975 10.1063/1.121665 10.1016/S0081-1947(08)60091-0 10.1098/rsta.2009.0226 10.1063/1.359446 10.1134/S1064226909040123 10.1088/0268-1242/5/12/007 10.1063/1.103803 10.1063/1.102628 10.1007/978-1-4419-9899-6 Ghandhi S.K. VLSI Fabrication Principles: Silicon and Gallium Arsenide. New York: Wiley, 1994, 864 p. 10.1063/1.121774 Matsumoto K. Application of scanning tunneling/atomic force microscope nanooxidation process to room temperature operated single electron transistor and other devices. Scanning Microscopy. 1998; 12(1): 61–69. 10.1134/S1063785011020040 10.1134/S0020441208040209 10.1007/978-3-319-21051-3 10.1016/j.diamond.2014.07.001 Temiryazeva M.P., Danilov Yu.A., Zdoroveishchev A.V., Kudrin A.V., Temiryazev A.G. Structuring CoPt magnetic films using atomic force microscopy. Materialy XX Mezhdunarodnogo simpoziuma «Nanofizika i nanoelektronika» = Proceedings of the XX International Symposium «Nanophysics and Nanoelectronics». N. Novgorod. 2016; 1: 328–329. (In Russ.) 10.1016/0038-1101(91)90076-B 10.1016/j.physe.2007.09.115 10.1134/S106373971708011X 10.1134/S1063782617110082 10.3897/j.moem.4.4.47093 https://moem.pensoft.net/article/47093/ https://moem.pensoft.net/article/47093/download/pdf/ https://moem.pensoft.net/article/47093/download/xml/ Electron transport in low-dimensional structures is often studied using semiconductor heterostructures with two-dimensional electron gas in which insulating regions separating the conducting channel from the gates are synthesized using one of available methods. These structures are distinguished by the high quality of the initial wafers and the necessity to change the surface topology during the study, this making photolithography ineffective. In this work we analyze the technology of insulating grooves that uses atomic force microscope, i.e. the pulse force nanolithography, which allows either treating single samples or forming narrow and deep grooves on semiconductor surfaces to provide good insulation. The experimentally measured transport characteristics of the nanostructures produced using this method confirm channel conductance quantization and the absence of large quantities of introduced defects. text/html en_US Modern Electronic Materials GaAs/AlGaAs heterostructre atomic force microscope two-dimensional electron gas nanostructure pulse force nanolithography local anodic oxidation method channel conductance quantization Use of atomic force microscope for the synthesis of GaAs/AlGaAs heterostructure base one-dimensional structure Research Article

10.3897/j.moem.4.4.39503 2018-12-01 moem

Samara University, Samara, Russia author Latukhina, Natalya V. National University of Science and Technology MISiS, Moscow, Russia author Kobeleva, Svetlana P. https://orcid.org/0000-0002-0879-7013 Samara University, Samara, Russia author Rogozhina, G. A. Samara University, Samara, Russia author Shishkin, Ivan A. National University of Science and Technology MISiS, Moscow, Russia author Schemerov, Ivan V. 2018-12-01 2018-12-01 2018 Modern Electronic Materials 2452-1779 2452-2449 4 143 150 2018 10.1134/1.1187985 10.1016/S0167-5729(99)00012-6 10.1134/S1063782606110170 Sakun E.A., Polyushkevich A.V., Harlashin P.A., Semenova O.V., Korets A.Ya. Development of porous structures on silicon. J. Siberian Federal University. Engineering & Technologies. 2010; 4(3): 430–443. (In Russ.) 10.1134/S1063785010060155 10.1134/1.1309429 Buchin E.Yu., Prokaznikov A.V. Character of n-type electrolyte system dynamics when anodized in hydrofluoric acid solutions. Pis’ma v zhurnal tekhnicheskoi fiziki. 1997; 23(5): 1–7. (In Russ.) Mozhaev A.V., Prokaznikov A.V., Timofeev V.V. Dynamic discrete three-dimensional model of pore formation in silicon. Issledovano v Rossii = Investigated in Russia. (In Russ.) http://zhurnal.ape.relarn.ru/articles/2006/069 Xiaoge Gregory Zhang. Electrochemistry of Silicon and Its Oxide. N. Y.; Boston; Dordrecht; London; Moscow: Kluwer Academic Publishers, 2004, 510 p. 10.1016/0013-4686(95)00071-L Tregulov V.V. Poristyi kremnii: tekhnologiya, svoistva, primenenie [Porous Silicon: Technology, Properties, Application]. Ryazan: RGU im. S. A. Esenina, 2011, p. 24. (In Russ.) 10.1134/S1063782617040212 10.1134/S1063782607070123 Kunakbaev T.Zh., Tukubaev E.E. Modelirovanie polucheniya poristogo kremniya na atomnom urovne [Simulation of porous silicon production at the atomic level]. Khaos i struktury v nelineinykh sistemakh. Teoriya i eksperement. Mezhdun. nauchno-prakt. konferentsiya = Chaos and structures in nonlinear systems. Theory and experiment. International scientific and practical the conference. 2015; (1): 171–176. (In Russ.). http://portal.kazntu.kz/files/publicate/2015-10-26-elbib_11.pdf 10.17516/1999-494X-2017-10-1-59-73 10.1134/S207004820901013X Latukhina N.V., Dereglazova T.S., Ivkov S.V., Volkov A.V., Deeva V.A. Photoelectrical properties of structure with micro- and nano-porous silicon. Izvestia of Samara Scientific Center of the Russian Academy of Sciences. 2009; 11(3): 66–70. http://www.ssc.smr.ru/media/journals/izvestia/2009/2009_3_66_70.pdf Anfimov I.M., Kobeleva S.P., Shchemerov I.V. Ustanovka dlya izmereniya udel’nogo elektrosoprotivleniya beskontaktnym SVCh metodom [Installation for measuring the electrical resistivity by a contactless microwave method]. Materialy I mezhdunarodnoi konf. «Aktual’nye problemy prikladnoi fiziki 2012» = Materials of the I International Conf. «Actual problems of applied physics 2012». 2012: 82–83. (In Russ.) 10.18287/1613-0073-2017-1900-84-89 10.3897/j.moem.4.4.39503 https://moem.pensoft.net/article/39503/ https://moem.pensoft.net/article/39503/download/pdf/ https://moem.pensoft.net/article/39503/download/xml/ In this work we have used contact and contactless techniques to measure the electrical resistivity of single crystal silicon wafers with porous layers of variable thickness synthesized on the surface. The porous layers have been synthesized on the surfaces of single crystal wafers with well pronounced microroughness pattern, either textured or grinded. We have used the classic four-probe method with a linear probe arrangement as the contact measurement technique, and the resonance microwave method based on microwave absorption by free carriers as the contactless measurement technique. Electrical resistivity distribution over the specimen surface has been mapped based on the measurement results. We have demonstrated a general agreement between the electrical resistivity distribution patterns as measured using the contact and contactless measurement techniques. To analyze the electrical resistivity scatter over the specimen surface area we have simulated the field distribution in the electrolyte during porous layer formation in a non-planar anode cell. The regularities of the electrical resistivity spatial distribution in different types of specimens are accounted for by specific porosity formation mechanisms which in turn are controlled by the initial microroughness pattern and the field distribution pattern in the electrolyte for each specific case. text/html en_US Modern Electronic Materials porous silicon electrical resistivity contactless method four-probe method electrochemical etching Contact and contactless porous silicon parameter measurement techniques Research Article

10.3897/j.moem.4.4.35062 2018-12-01 moem

Osmania University, Hyderabad, India author Ayodhya, Dasari Osmania University, Hyderabad, India author Veerabhadram, Guttena 2018-12-01 2018-12-01 2018 Modern Electronic Materials 2452-1779 2452-2449 4 151 162 2018 10.1038/srep14267 Bhadra R., Singh V.N., Mehta B.R., Datta P. Studies on some aspects of ZnS nanocrystals for possible applications in electronics. Chalcogenide Lett. 2009; 6(5): 189–196. http://chalcogen.ro/189_Bhadra-Singh-Mehta.pdf 10.1007/s10895-015-1639-5 10.1016/j.spmi.2016.12.027 10.1016/j.jphotobiol.2016.02.002 10.1080/17458080.2015.1070312 10.1016/j.cis.2017.06.007 10.1016/j.jiec.2014.09.043 10.1016/j.molliq.2017.07.059 10.1021/acs.jpcc.5b11566 10.1016/j.electacta.2013.11.176 10.1016/S1003-6326(16)64166-3 10.1016/j.jece.2017.11.071 10.1016/j.jssc.2009.07.038 10.1039/C4CE02556C 10.1016/j.saa.2013.01.045 10.1016/j.msec.2013.12.001 10.1016/j.jallcom.2012.12.081 10.1016/S0167-577X(00)00206-8 10.1016/j.matlet.2004.11.044 10.1016/0025-5408(95)00150-6 10.9790/5736-0610109 10.1016/j.jallcom.2009.07.109 10.1063/1.368425 10.1063/1.328642 10.1063/1.118866 10.1002/bio.2710 10.1103/PhysRev.111.1540 10.1063/1.366152 10.1016/j.mseb.2017.08.008 10.1039/b100604p 10.1039/a809688k 10.1021/ac050574s 10.1039/b412061b 10.1021/ac051441 10.1016/j.talanta.2011.12.074 10.1021/ac00056a005 10.1016/S0039-9140(02)00048-6 10.1134/S1061934807040090 10.1007/s10904-017-0672-z 10.1155/2008/875410 Shreenivas M.T., Chetan B.P., Bhat A.R. Synthesis and pharmacological evaluation of certain Schiff bases and thiazoldine derivatives as AT1 Angiotension-II (AII) receptor Antagonists. J. Pharm. Sci. Tech. 2009; 1: 88–94. Kumar S., Dhar D.N., Saxena P.N. Applications of metal complexes of Schiff bases-A review. J. Scientific and Industrial Research. 2009; 68(3): 181–187. 10.1016/j.snb.2006.07.033 10.1016/j.jallcom.2013.08.051 10.1007/s11671-009-9377-8 10.1007/s11164-015-2254-4 10.1021/jp049976e 10.1016/j.jbiotec.2013.11.017 10.3390/s90907266 10.1016/j.jcis.2011.04.079 10.1016/j.apsusc.2011.02.124 10.1007/s10895-016-1940-y 10.1021/acsami.7b05827 10.1155/2017/3648564 10.1016/j.snb.2016.12.002 10.1016/j.snb.2017.02.163 10.1016/j.snb.2015.07.035 10.1016/j.tetlet.2016.12.038 10.1016/j.snb.2013.04.086 10.1021/acsami.7b04185 10.1021/acs.analchem.7b00777 10.3897/j.moem.4.4.35062 https://moem.pensoft.net/article/35062/ https://moem.pensoft.net/article/35062/download/pdf/ https://moem.pensoft.net/article/35062/download/xml/ We report the simple synthesis of zinc sulfide nanoparticles (ZnS NPs) by a co-precipitation method using Schiff base, (2-[(4-methoxy-phenylimino)-methyl]-4-nitro phenol) as a capping agent. Here, Schiff base is also used as N, O-donor ligand to control the morphology of NPs and fluorescence interactions. The formation of ZnS NPs and their optical, structural, thermal properties and morphologies were studied by means of UV–vis DRS, fluorescence, FTIR, XRD, SEM, TEM, zeta potential and TGA. The optical properties and quantum confinement effect of the products were confirmed by means of spectroscopic measurements. XRD and TEM image shows that the synthesized ZnS NPs have cubic structures with a diameter of about less than 10 nm. The prepared ZnS NPs exhibited as a selective probe detection of Fe3+, Cr2+ and Cd2+ ions by fluorometrically and the emission band which disappears in the presence of increasing concentrations of Fe3+, Cr2+ and Cd2+ ions. Based on the fluorescence quenching of the NPs in the presence of metal ion of interest, the feasibility of their determinations was examined according to the Stern-Volmer equation. Our work suggested that Schiff base capped ZnS NPs could be a potential selective sensor in the detection of heavy metal ions. text/html en_US Modern Electronic Materials ZnS NPs schiff base fluorescence sensor selective probe metal ion detection Synthesis and characterization of N, O-donor Schiff base capped ZnS NPs as a sensor for fluorescence selective detection of Fe 3+, Cr 2+ and Cd 2+ ions Research Article

10.3897/j.moem.5.1.46413 2019-03-01 moem

Shubnikov Institute of Crystallography of Federal Scientific Research Centre «Crystallography and Photonics» of Russian Academy of Sciences, Moscow, Russia author Asadchikov, Victor E. Shubnikov Institute of Crystallography of Federal Scientific Research Centre «Crystallography and Photonics» of Russian Academy of Sciences, Moscow, Russia author Dyachkova, Irina G. Shubnikov Institute of Crystallography of Federal Scientific Research Centre «Crystallography and Photonics» of Russian Academy of Sciences, Moscow, Russia author Zolotov, Denis A. Shubnikov Institute of Crystallography of Federal Scientific Research Centre «Crystallography and Photonics» of Russian Academy of Sciences, Moscow, Russia author Krivonosov, Yuri S. National University of Science and Technology, Moscow, Russia author Bublik, Vladimir T. HSE Tikhonov Moscow Institute of Electronics and Mathematics, Moscow, Russia author Shikhov, Alexander I. 2019-03-01 2019-03-01 2019 Modern Electronic Materials 2452-1779 2452-2449 5 1 13 19 2019 Kozlovski V. V. Modifitsirovanie poluprovodnikov puchkami protonov [Modification of semiconductors by proton beams]. St. Petersburg: Nauka, 2003. 268 p. (In Russ.) Smirnov I. S., Kuznetsov N. V., Soloviev G. G. Formation of layers with special properties in silicon by implantation of protons and heat treatment. XVI Vsesoyuznaya konferentsiya po fizike vzaimodeistviya zaryazhennykh chastits s kristallom = XVI All-Union conference on physics of interaction of charged particles with crystal. Moscow: MGU, 1988, pp. 78–81. (In Russ.) 10.1049/el:19950805 Gubarev V., Semenov A., Surma A., Stolbunov V. Technology of proton irradiation and the possibility of its application to improve the characteristics of power diodes and thyristors. Silovaya Elektronika. 2011, no. 5, pp. 108–111. (In Russ.) Smirnov I. S., Soloviev G. G., Novoselova E. G., Gurinov D. E. Formation of layers with special properties in silicon by implantation of protons and heat treatment. VII Mezhnatsional’noe soveshchanie «Radiatsionnaya fizika tverdogo tela» = VII International Meeting «Radiation physics of solids». Moscow: MGIEM, 1997, pp. 230–231. (In Russ.) 10.1088/0022-3719/17/35/007 10.4028/www.scientific.net/SSP.205-206.311 Bezrodnykh I. P., Tyutnev A. P., Semenov V. T. Radiatsionnye effekty v kosmose. Chast’ 3. Vliyanie ioniziruyushchego izlucheniya na izdeliya elektronnoi tekhniki [Radiation effects in space. Pt 3. Influence of ionizing radiation on electronic products]. Moscow: AO «Korporatsiya «VNIIEM», 2017. 64 p. (In Russ.) Dyachkova I. G., Novoselova E. G, Smirnov I. S. Implantation of a silicon wafer with protons under conditions of intense mechanical surface layer. XXIV Mezhdunarodnaya konferentsiya «Radiatsionnaya fizika tverdogo tela» = XXIV International Conference «Radiation physics of solids». Moscow: FGBNU «NII PMT», 2014, pp. 512–518. (In Russ.) Dyachkova I. G., Novoselova E. G., Smirnov I. S. Influence of temperature on the formation of disturbed layers in silicon under proton irradiation. XXV Mezhdunarodnaya konferentsiya «Radiatsionnaya fizika tverdogo tela» = XXV International Conference «Radiation physics of solids». Moscow: FGBNU «NII PMT», 2015, pp. 539–549. (In Russ.) Smirnov I. S., Novoselova E. G., Dyachkova I. G. Influence of temperature on the formation of defects in silicon crystals during proton implantation. Sed’moi mezhdunarodnyi nauchnyi seminar i Pyataya mezhdunarodnaya molodezhnaya nauchnaya shkola-seminar «Sovremennye metody analiza difraktsionnykh dannykh i aktual’nye problemy rentgenovskoi optiki» = The Seventh International Scientific Seminar and the Fifth International Youth Scientific School-seminar «Modern methods of the analysis of diffraction data and actual problems of x-ray optics». Velikiy Novgorod, 2015, pp. 222–225. (In Russ.) Dyachkova I. G., Novoselova E. G., Smirnov I. S. Transformation of radiation defects in proton-implanted silicon during low-temperature heat treatment. XXVI XXVI Mezhdunarodnaya konferentsiya «Radiatsionnaya fizika tverdogo tela» = XXVI International Conference «Radiation physics of solids». Moscow: FGBNU «NII PMT», 2016, pp. 362–370. (In Russ.) Dyachkova I. G., Novoselova E. G., Smirnov I. S., Monakhov I. S. Influence of mechanical stresses on defect formation in silicon under irradiation by protons. 12-ya Mezhdunarodnaya konferentsiya «Vzaimodeistvie izluchenii s tverdym telom» = 12th International Conference «Interaction of radiation with a solid body». Minsk, 2017, pp. 140–141. (In Russ.) 10.1134/S1027451018030278 Dyachkova I. G. The formation of damage layers in silicon crystals implanted with protons. Thesis of Cand. Sci. (Phys.-Math.). Moscow, 2004. 172 p. (In Russ.) Sorokin K. V. Research and development of methods of surface protection of silicon photodiodes using ion implantation. Thesis of Cand. Sci. (Eng.). Moscow, 2000. 145 p. (In Russ.) Aleksandrov P. A., Baranova E. K., Baranova I. V., Budaragin V. V., Litvinov V. L. The effect of annealing temperature on the output of implanted hydrogen blisters in silicon. XII Mezhdunarodnoe soveshchanie «Radiatsionnaya fizika tverdogo tela» = XII International Conference «Radiation physics of solids». Moscow: NII PMT MGIEM (TU), 2002, pp. 149–160. (In Russ.) Burenkov A. F., Komarov F. F., Kumakhov M. A., Temkin M. M. Tablitsy parametrov prostranstvennogo raspredeleniya ionno-implantirovannykh primesei [Tables of parameters of the spatial distribution of ion-implanted impurities]. Minsk: BGU, 1980. 352 p. (In Russ.) 10.1080/10420159408219774 Afanas’ev A. M., Aleksandrov P. A., Imamov R. M. Rentgenodifraktsionnaya diagnostika submikronnykh sloev [X-ray diffraction diagnostics of submicron layers]. Moscow: Nauka, 1989. 152 p. (In Russ.) Pinsker Z. G. Dinamicheskoe rasseyanie rentgenovskikh luchei v ideal’nykh kristallakh [Dynamical scattering of x-rays in perfect crystals]. Moscow: Nauka, 1974. 368 p. (In Russ.) Bowen D. K., Tanner B. K. Vysokorazreshayushchaya rentgenovskaya difraktometriya i topografiya [High resolution x-ray diffractometry and topography]. St. Petersburg: Nauka, 2002. 274 p. (In Russ.) Vavilov V. S., Kiselev V. F., Mukashev B. N. Defekty v kremnii i na ego poverkhnosti [Defects in silicon and on its surface]. Moscow: Nauka, 1990. 216 p. (In Russ.) 10.1134/S1063785014120086 10.1134/S1063782610050234 10.3897/j.moem.5.1.46413 https://moem.pensoft.net/article/46413/ https://moem.pensoft.net/article/46413/download/pdf/ https://moem.pensoft.net/article/46413/download/xml/ The quality and structural perfection of single crystal silicon have been studied using double-crystal X-ray diffraction after hydrogen ion implantation and thermal annealing used in a number of semiconductor technologies. The fundamental difference of this approach is the possibility to rapidly obtain reliable experimental results which were confirmed using X-ray topography. Data have been presented for the condition of the damaged layer in n-type silicon single crystals (r = 100 W × cm) having the (111) orientation and a thickness of 2 mm after proton implantation at energies E = 200, 300 and 100 + 200 + 300 keV and dose D = 2 × 1016 cm-2 and subsequent heat treatment in the T = 100–900 °C range. Using the method of integral characteristics we have revealed a nonmonotonic dependence of the integral characteristics of the damaged layer, i.e., the mean effective thickness Leff and the mean relative deformation Da/a, on the annealing temperature, the maximum deformation being observed for ~300 °C. The results have allowed us to make a general assessment of the damaged layer condition after heat treatment. text/html en_US Modern Electronic Materials silicon implantation thermal annealing X-ray diffraction X-ray topography method of integral characteristics Effect of proton doping and heat treatment on the structure of single crystal silicon Research Article

10.3897/j.moem.5.1.39452 2019-03-01 moem

Institute of Semiconductor Physics, Novosibirsk, Russia author Stepina, Natalia P. OCSiAl Group, Palo Alto, United States of America author Galkov, M.S. OCSiAl Group, Palo Alto, United States of America author Predtechenskiy, M.R. OCSiAl Group, Palo Alto, United States of America author Bezrodny, A.E. Institute of Semiconductor Physics, Novosibirsk, Russia author Kirienko, V.V. Institute of Semiconductor Physics, Novosibirsk, Russia Novosibirsk State University, Novosibirsk, Russia author Dvurechenskii, Anatolii V. 2019-03-01 2019-03-01 2019 Modern Electronic Materials 2452-1779 2452-2449 5 1 21 26 2019 10.3897/j.moem.5.1.39452 https://moem.pensoft.net/article/39452/ https://moem.pensoft.net/article/39452/download/pdf/ https://moem.pensoft.net/article/39452/download/xml/ Buckypapers (BPs) with carbon nanotubes (CNTs) are very promising for a lot of applications, in which their high conductance, strength and small weight are required. In this work, isotropic BPs were prepared using the solution-based deposition that includes the single walled carbon nanotubes (SWCNTs) dispersion and the dispersion filtration from a solvent. To increase the BP conductivity, the orientation of the SWCNT bundles composing BPs and a following iodine doping were applied. The method of extrusion through the narrow (300 µm) gap was used for the SWCNT orientation. The temperature dependences of conductance for isotropic, oriented and doped BPs were studied to understand the effect of CNT alignment and the mechanism of transport through SWCNT BPs. It was shown that bundle orientation increases the BP conductivity from ~103 S × cm-1 to ~104 S × cm-1, and iodine doping of oriented samples additionally increase the conductivity by an order. The fluctuation – assisted tunneling between CNT bundles was used to describe the mechanism of low temperature conductivity. text/html en_US Modern Electronic Materials oriented buckypapers single-walled carbon nanotubes iodine doping Preparation and transport properties of oriented buckypapers with single walled carbon nanotubes Research Article

10.3897/j.moem.5.1.38575 2019-03-01 moem

Federal Research Center «Computer Science and Control» of Russian Academy of Sciences, Moscow, Russia author Kharchenko, Vyacheslav A. 2019-03-01 2019-03-01 2019 Modern Electronic Materials 2452-1779 2452-2449 5 1 1 11 2019 10.3897/j.moem.5.1.38575 https://moem.pensoft.net/article/38575/ https://moem.pensoft.net/article/38575/download/pdf/ https://moem.pensoft.net/article/38575/download/xml/ Gettering of rapidly diffusing metallic impurities and structural defects in silicon which is the main material for IC fabrication, high-power high-voltage devices and neutron doped silicon has been studied. Structural defect based getters and gas phase getters based on chlorine containing compounds have been analyzed. Formation of structural defect based getters requires producing intrinsic sources of dislocation generation and precipitate/dislocation agglomerate formation. We show that dislocations are generated at microcrack mouths and form a low-mobility dislocation network at inactive wafer sides. In the latter case the defects are generated in the wafer region adjacent to the active layer of the electronic component. The generation of intrinsic getters is based on the decomposition of the supersaturated oxygen solid solution in silicon which favors the formation of a complex defect system in silicon that consists of various precipitate/dislocation agglomerates. Stacking faults also form, i.e., oxide precipitates with Frank’s dislocation loop clouds. Two intrinsic getter formation methods have been considered: one is related to oxygen impurity drain from the wafer surface region and the other implies accurate control of vacancy distribution over wafer thickness. We have analyzed the effect of getters as defect structures on the reduction of the mechanical stress required for dislocation generation onset which may eventually determine the mechanical strength of silicon wafers. The mechanism of impurity and defect gettering by gas phase medium with chlorine-containing compound additions has been considered. We show that silicon atom interaction with chlorine in the surface wafer region at high temperatures may cause the formation of vacancies which may penetrate to the specimen bulk with some probability. This leads to the case ∆Сv > 0 and ∆Ci ≤ 0, which changes the composition and density of the microdefects. Examples have been given for practical use of heat treatment of silicon wafers in a chlorine-containing atmosphere during oxide film application with the aim to dissolve microdefects, drain rapidly diffusing impurities from crystal bulk and prevent the formation of generation/recombination centers during device fabrication and silicon neutron doping. text/html en_US Modern Electronic Materials single crystal silicon rapidly diffusing impurities structural defects getters dislocation sources chlorine-containing atmosphere Getters in silicon Research Article

10.3897/j.moem.5.1.46315 2019-03-01 moem

RIIS Ltd, Moscow, Russia author Kobeleva, Svetlana P. https://orcid.org/0000-0002-0879-7013 RIIS Ltd, Moscow, Russia author Anfimov, Ilya M. Kutateladze Institute of Thermophysics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia author Berdnikov, Vladimir S. Engineering Institute of Zaporizhzhya National University, Zaporizhzhia, Ukraine author Kritskaya, Tatyana V. 2019-03-01 2019-03-01 2019 Modern Electronic Materials 2452-1779 2452-2449 5 1 27 32 2019 10.3897/j.moem.5.1.46315 https://moem.pensoft.net/article/46315/ https://moem.pensoft.net/article/46315/download/pdf/ https://moem.pensoft.net/article/46315/download/xml/ Electrical resistivity distribution maps have been constructed for single crystal silicon wafers cut out of different parts of Czochralski grown ingots. The general inhomogeneity of the wafers has proven to be relatively high, the resistivity scatter reaching 1–3 %. Two electrical resistivity distribution inhomogeneity types have been revealed: azimuthal and radial. Experiments have been carried out for crystal growth from transparent simulating fluids with hydrodynamic and thermophysical parameters close to those for Czochralski growth of silicon single crystals. We show that a possible cause of azimuthal electrical resistivity distribution inhomogeneity is the swirl-like structure of the melt under the crystallization front (CF), while a possible cause of radial electrical resistivity distribution inhomogeneity is the CF curvature. In a specific range of the Grashof, Marangoni and Reynolds numbers which depend on the ratio of melt height and growing crystal radius, a system of well-developed radially oriented swirls may emerge under the rotating CF. In the absence of such swirls the melt is displaced from under the crystallization front in a homogeneous manner to form thermal and concentration boundary layers which are homogeneous in azimuthal direction but have clear radial inhomogeneity. Once swirls emerge the melt is displaced from the center to the periphery, and simultaneous fluid motion in azimuthal direction occurs. The overall melt motion becomes helical as a result. The number of swirls (two to ten) agrees with the number of azimuthally directed electrical resistivity distribution inhomogeneities observed in the experiments. Comparison of numerical simulation results in a wide range of Prandtl numbers with the experimental data suggests that the phenomena observed in transparent fluids are universal and can be used for theoretical interpretation of imperfections in silicon single crystals. text/html en_US Modern Electronic Materials Czochralski single crystal growth single crystal silicon electrical resistivity electrical resistivity distribution maps growth process simulation Possible causes of electrical resistivity distribution inhomogeneity in Czochralski grown single crystal silicon Research Article

10.3897/j.moem.5.1.51295 2019-03-15 moem

JSC «RPC “Istok” named after Shokin», Fryazino, Russia author Semenov, Alexey S. JSC «RPC “Istok” named after Shokin», Fryazino, Russia author Nalogin, Aleksey G. JSC «RPC “Istok” named after Shokin», Fryazino, Russia author Shcherbakov, Sergey V. JSC «RPC “Istok” named after Shokin», Fryazino, Russia author Myasnikov, Alexander V. National University of Science and Technology MISiS, Moscow, Russia author Isaev, Igor M. National University of Science and Technology MISiS, Moscow, Russia author Kostishin, Vladimir G. https://orcid.org/0000-0001-5384-6331 JSC «RPC “Istok” named after Shokin», Fryazino, Russia author Adiatulina, Natalya E. JSC «RPC “Istok” named after Shokin», Fryazino, Russia National University of Science and Technology MISiS, Moscow, Russia author Alekseev, Albert A. National University of Science and Technology MISiS, Moscow, Russia JSC «RPC “Istok” named after Shokin», Fryazino, Russia author Belokon, Evgeny A. National University of Science and Technology MISiS, Moscow, Russia author Mezentseva, Marina P. 2019-03-15 2019-03-15 2019 Modern Electronic Materials 2452-1779 2452-2449 5 1 33 39 2019 10.3897/j.moem.5.1.51295 https://moem.pensoft.net/article/51295/ https://moem.pensoft.net/article/51295/download/pdf/ https://moem.pensoft.net/article/51295/download/xml/ In this work we have considered metrological problems and measurement of magnetic parameters and presented methods of measuring effective magnetic anisotropy field HAeff and ferromagnetic resonance bandwidth ∆H in magnetically uniaxial hexagonal ferrites in the electromagnetic microwave working frequency range. The methods allow measuring HAeff in the 10–23 and 28–40 kE ranges and ∆H in the 0.5–5.0 range. One method (suitable for wavelength measurements in free space in the 3-mm wavelength range) has been implemented for the 78.33–118.1 GHz range. The other method (based on the use of microstrip transmission lines) has been implemented for the 25–67 GHz range. The methods have been tested for polycrystalline specimens of hexagonal barium and strontium ferrites with nominal composition or complex substituted and having high magnetic texture. The measurement results have been compared with those obtained using conventional measurement methods and spherical specimens. Our methods prove to be highly accurate and reliable. text/html en_US Modern Electronic Materials magnetic crystallographic anisotropy ferromagnetic resonance magnetically uniaxial hexagonal ferrites method of measurement in free space measurement method based on the use of microstrip transmission lines Measurement of effective magnetic anisotropy field and ferromagnetic resonance bandwidth at ferromagnetic resonance frequency in magnetically uniaxial hexagonal ferrites Research Article

10.3897/j.moem.5.2.51314 2019-06-01 moem

National University of Science and Technology MISiS, Moscow, Russia author Kislyuk, Aleksandr M. https://orcid.org/0000-0001-7185-8715 National University of Science and Technology MISiS, Moscow, Russia author Ilina, Tatiana S. National University of Science and Technology MISiS, Moscow, Russia author Kubasov, Ilya V. https://orcid.org/0000-0002-6569-466X National University of Science and Technology MISiS, Moscow, Russia author Kiselev, Dmitry A. https://orcid.org/0000-0003-1047-3007 National University of Science and Technology MISiS , Moscow, Russia author Temirov, Aleksandr A. National University of Science and Technology MISiS, Moscow, Russia author Turutin, Andrei V. https://orcid.org/0000-0003-1090-3441 National University of Science and Technology MISiS, Moscow, Russia author Malinkovich, Mikhail D. National University of Science and Technology MISiS, Moscow, Russia author Polisan, Andrey A. National University of Science and Technology MISiS, Moscow, Russia JSC “Giredmet”, Moscow, Russia author Parkhomenko, Yuri N. https://orcid.org/0000-0002-1970-9867 2019-06-01 2019-06-01 2019 Modern Electronic Materials 2452-1779 2452-2449 5 51 60 2019 10.3897/j.moem.5.2.51314 https://moem.pensoft.net/article/51314/ https://moem.pensoft.net/article/51314/download/pdf/ https://moem.pensoft.net/article/51314/download/xml/ Ferroelectric lithium niobate (LiNbO3) crystals with an engineered domain structure have a number of applications in optical systems for generation of multiple laser radiation harmonics, acoustooptics, precision actuators, vibration and magnetic field sensors, including those for high-temperature applications, and prospectively, in non-volatile computer memory. We have studied the effect of charged domain boundary on the formation of induced domain structures in congruent lithium niobate (LiNbO3) crystals at the non-polar x-cut. Bi- and polydomain ferroelectric structures containing charged “head-to-head” and “tail-to-tail” type domain boundaries have been formed in the specimens using diffusion annealing in air ambient close to the Curie temperature and infrared annealing in an oxygen free environment. The surface potential near the charged domain wall has been studied using an atomic force microscope (AFM) in Kelvin mode. We have studied surface wedge-shaped induced microscopic domains formed at the charged domain boundary and far from that boundary by applying electric potential to the AFM cantilever which was in contact with the crystal surface. We have demonstrated that the morphology of the induced domain structure depends on the electrical conductivity of the crystals. The charged “head-to-head” domain boundary has a screening effect on the shape and size of the domain induced at the domain wall. Single wedge-shaped domains forming during local repolarization of reduced lithium niobate crystals at the AFM cantilever split into families of microscopic domains in the form of codirectional beams emerging from a common formation site. The charged domain wall affects the topography of the specimens by inducing the formation of an elongated trench, coincident with the charged boundary, during reduction annealing. text/html en_US Modern Electronic Materials lithium niobate bidomain crystal charged domain wall diffusion annealing atomic piezoresponse force microscopy surface potential Tailoring of stable induced domains near a charged domain wall in lithium niobate by probe microscopy Research Article

10.3897/j.moem.5.2.51391 2019-06-01 moem

JSC «S&PE «Pulsar», Moscow, Russia author Gladysheva, Nadezhda B. JSC «S&PE «Pulsar», Moscow, Russia author Gruzdov, Vadim V. JSC «S&PE «Pulsar», Moscow, Russia author Kolkovskii, Yurii V. Moscow Technological University (MIREA), Moscow, Russia JSC «S&PE «Pulsar», Moscow, Russia author Kontsevoi, Yulii A. Moscow Technological University (MIREA), Moscow, Russia author Pevtsov, Evgenii F. 2019-06-01 2019-06-01 2019 Modern Electronic Materials 2452-1779 2452-2449 5 87 89 2019 10.3897/j.moem.5.2.51391 https://moem.pensoft.net/article/51391/ https://moem.pensoft.net/article/51391/download/pdf/ https://moem.pensoft.net/article/51391/download/xml/ Photoluminescence with the peak corresponding to yellow color of the visible spectrum (so-called yellow luminescence) originates from deep levels in the GaN buffer layers of heterostructures and depends on heterostructure growth conditions. In turn deep levels affect the resistance of Ohmic contacts of microwave transistors fabricated from these heterostructures. This determines the reliability of GaN microwave transistor operation. Two types of units for control of photoluminescence with the peak in the yellow visible spectral region have been designed with the aim to control the quality of AlGaN/GaN/SiC and AlGaN/GaN/Al2O3 heterostructures. One of the units is used for fast control of yellow photoluminescence and the other for photoluminescence mapping on heterostructure wafer surfaces. Examples of photoluminescence maps for structures grown on different substrates have been given. text/html en_US Modern Electronic Materials yellow photoluminescence in AlGaN/GaN heterostructures fast control of photoluminescence photoluminescence mapping AlGaN/GaN/SiC and AlGaN/GaN/Al2O3 heterostructures Control of yellow photoluminescence in AlGaN/GaN heterostructures Short Communication

10.3897/j.moem.5.2.50758 2019-06-01 moem

Scientific-Practical Materials Research Centre of the NAS of Belarus, Minsk, Belarus author Kalanda, Nikolay https://orcid.org/0000-0001-7679-4968 Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus author Gurskii, Alexander Scientific-Practical Materials Research Centre of the NAS of Belarus, Minsk, Belarus author Yarmolich, Marta V. Scientific-Practical Materials Research Centre of the NAS of Belarus, Minsk, Belarus author Petrov, Alexander V. https://orcid.org/0000-0003-1208-5913 I.M. Frank Laboratory of Neutron Physics, Joint Institute for Nuclear Research, Dubna, Russia author Bobrikov, Ivan А. I.M. Frank Laboratory of Neutron Physics, Joint Institute for Nuclear Research, Dubna, Russia author Ivanshina, Olga Yu. I.M. Frank Laboratory of Neutron Physics, Joint Institute for Nuclear Research, Dubna, Russia author Sumnikov, Sergey V. Smallmatek − Small Materials and Technologies, Lda., Aveiro, Portugal author Maia, Frederico Scientific-Practical Materials Research Centre of the NAS of Belarus, Minsk, Belarus author Zhaludkevich, Aliaksandr L. https://orcid.org/0000-0003-1900-0564 Scientific-Practical Materials Research Centre of the NAS of Belarus, Minsk, Belarus author Demyanov, Sergey E. 2019-06-01 2019-06-01 2019 Modern Electronic Materials 2452-1779 2452-2449 5 69 75 2019 10.1088/0953-8984/19/2/023201 10.1016/j.mseb.2005.09.013 10.1103/PhysRevB.73.094419 10.1021/am5052125 10.1016/S0304-8853(01)01208-2 10.1016/S0304-8853(01)01292-6 10.1103/PhysRevLett.85.2549 10.1166/sam.2015.2134 10.1002/pssb.201800278 10.1016/j.jmmm.2003.12.484 10.1103/PhysRevB.68.144431 10.1016/S0025-5408(01)00520-7 10.1016/j.physb.2003.11.032 10.1063/1.1524710 10.1007/s10948-015-3077-7 10.1021/ic50005a050 10.1016/j.matchemphys.2005.03.060 10.1103/PhysRevB.61.R7827 10.1006/jssc.2000.8939 10.1063/1.1421227 10.1016/j.jmmm.2008.12.029 10.1002/pssb.201600527 10.1016/j.solidstatesciences.2004.02.007 10.1107/S0021889895014920 Rodríguez-Carvajal J. Recent developments of the program FULLPROF. In: Commission on powder diffraction (IUCr). Newsletter, 2001: 26: 12–19. URL: https://www.fkf.mpg.de/4112052/cpd26.pdf 10.3897/j.moem.5.2.50758 https://moem.pensoft.net/article/50758/ https://moem.pensoft.net/article/50758/download/pdf/ https://moem.pensoft.net/article/50758/download/xml/ The sequence of phase transformations in the process of crystallization of the Sr2CrMoO6 by the solid-phase technique from a stoichiometric mixture of simple oxides SrCO3 + 0.5Cr2O3 + MoO, has been investigated. It was determined that the synthesis of the strontium chrome-molybdate proceeds through a series of sequential-parallel stages. By means of the differential thermal analysis and thermogravimetric analysis data, it has been established that five clearly expressed endothermal effects were observed in the temperature range 300−1300 K. It was found that during the studies of the phase transformations sequence in the process of the double perovskite synthesis, SrCrO3, SrMoO4 and Sr2CrO4 are the main concomitant compounds. Herewith, it has been observed that with the annealing temperature increase from 300 to 1270 K, the complex compounds SrCrO4, SrCrO3 (350−550 К) and SrMoO4, Sr2CrO4 (600−750 К) are emerging initially and practically simultaneously. It has been revealed with a subsequent temperature increase that in the temperature range 940−1100 К, the SrMoO4, Sr2CrO4 and SrCrO3 phase concentration dramatically drops with the emerging and growth of the Sr2CrMoO6-δ double perovskite. With that in the range up to 1120–1190 К, the main XRD reflexes intensity for the SrCrO3 and SrMoO4 lowers substantially, and their content in the samples at 1170 К is no more than 7.9%. During a consideration of the derivative of the SrCrO3, SrMoO4 and Sr2CrO4 phase transformation degree (|(dα/dt)|mах), at which their crystallization rates are maximal, it has been determined that |(dα/dt)|mах for the Sr2CrO4 corresponds to the maximal temperature 1045 К, which indicates the presence of considerable kinetic difficulties at the formation of the Sr2CrO4 phase. Thereafter this phase does not disappear and at its appearance the slowing down of the double perovskite growth takes place. On the base of investigations of the phase transformations dynamics for the obtaining of the single-phase Sr2CrMoO6-δ compound with the superstructural ordering of the Cr/Mo cations and improved magnetic characteristics, the SrCrO3 and SrMoO4 precursors were used with combined heating modes. text/html en_US Modern Electronic Materials double perovskite differential thermal analysis thermogravimetric analysis sequence of phase transformations crystallization rate Sequence of phase transformations at the formation of the strontium chrome-molybdate compound Research Article

10.3897/j.moem.5.2.51365 2019-06-01 moem

Institute for Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences, Moscow, Russia author Aleshin, Andrey N. J&C «S&PE «Pulsar», Moscow, Russia author Еnisherlova, Kira L. 2019-06-01 2019-06-01 2019 Modern Electronic Materials 2452-1779 2452-2449 5 77 85 2019 10.3897/j.moem.5.2.51365 https://moem.pensoft.net/article/51365/ https://moem.pensoft.net/article/51365/download/pdf/ https://moem.pensoft.net/article/51365/download/xml/ The thermodynamic and kinetic regularities of processes occurring during heat treatment in silicon layers implanted with oxygen and carbon ions have been considered. We have analyzed the regularities of silicon deformation, impurity distribution and defect formation after different annealing modes. Diffusion smearing of implanted impurities in these layers has not been observed during carbon and oxygen implantation. As-annealed carbon does not occupy sites of the silicon lattice, in contrast to the implantation behavior of other impurities, e.g. boron and phosphorus. Phase formation regularities in implanted layers during subsequent heat treatment have been analyzed. Changes in the free energy of the system during heterogeneous and homogeneous precipitate nucleation have been compared. Sequential implantation with carbon and oxygen ions has been found to initiate diffusion flows of carbon and oxygen toward the center of the ion doped layer (the uphill diffusion phenomenon). The possibility of uphill diffusion has been analyzed from the standpoints of the Onsager theory. We show that the contribution of the chemical interaction between oxygen and carbon is far greater than the entropy contribution to the diffusion flux. We have demonstrated the high efficiency of ion doping with oxygen and carbon for gettering of uncontrolled impurities from active regions of silicon structures. The efficiency of this gettering process has been assessed for epitaxial structures in which layers had been grown on silicon wafers implanted with these impurities. Uphill diffusion in the layers after double doping with carbon and oxygen has led to the formation of more defects which may provide for efficient gettering. We have found the optimal oxygen and carbon implantation dose ratio for maximal gettering efficiency. text/html en_US Modern Electronic Materials semiconductors ion implantation silicon defect formation gettering gettering centers diffusion smearing uphill diffusion Physicochemical fundamentals of phase formation in silicon layers implanted with oxygen and carbon Research Article

10.3897/j.moem.5.2.47082 2019-06-01 moem

National University of Science and Technology MISiS, Moscow, Russia author Anfimov, Ilya M. SC Fomos-Materials, Moscow, Russia author Buzanov, Oleg A. https://orcid.org/0000-0002-7532-5710 National University of Science and Technology MISiS, Moscow, Russia author Kozlova, Anna P. https://orcid.org/0000-0002-3250-3206 National University of Science and Technology MISiS, Moscow, Russia author Kozlova, Nina S. https://orcid.org/0000-0003-4057-9718 National University of Science and Technology MISiS, Moscow, Russia author Zabelina, Evgeniya V. https://orcid.org/0000-0002-5844-5673 2019-06-01 2019-06-01 2019 Modern Electronic Materials 2452-1779 2452-2449 5 41 49 2019 10.3897/j.moem.5.2.47082 https://moem.pensoft.net/article/47082/ https://moem.pensoft.net/article/47082/download/pdf/ https://moem.pensoft.net/article/47082/download/xml/ The effect of the growth atmosphere and the type of deposited current conductive coatings on the impedance/admittance of La3Ta0.5Ga5.5O14 lanthanum-gallium tantalate has been revealed. The lanthanum-gallium tantalate single crystals have been grown in argon and argon with admixture of oxygen gas atmospheres. Current conductive coatings of iridium, gold with a titanium sublayer, and silver with a chromium sublayer have been deposited onto the single crystals. The tests have been carried out taking into account the polarity of the specimens. The temperature and frequency dependences of the admittance of lanthanum-gallium tantalate have been measured in an alternating electric field at frequencies in the 5 Hz to 500 kHz range and temperatures from 20 to 450 °C. The specimens with gold current conductive coating have the lowest admittance. Analysis of the temperature and frequency functions of the dielectric permeability has shown the absence of any frequency dependence in the entire test range. Equivalent electric circuits have been constructed. Graphic-analytic and numeric analysis of the equivalent electric circuits of the electrode/langatate/electrode cells has shown that the admittance of the metal/langatate/metal cells is controlled by the electrochemical processes at the electrode/electrolyte/electrode interface. The absolute values of the impedance components depend on the langatate growth conditions and the type of the electrodes. Our measurements suggest that the material of the current conductive coating has a greater effect on the absolute values of the measured parameters than the growth atmosphere. text/html en_US Modern Electronic Materials langatate admittance growth atmosphere dielectric permeability impedance spectroscopy Impedance spectroscopy study of lanthanum-gallium tantalate single crystals grown under different conditions Research Article

10.3897/j.moem.5.2.51353 2019-06-01 moem

Admiral Ushakov State Maritime University, Novorossisk, Russia author Timokhin, Viktor M. Scientific and Technological Center of Unique Instrumentation of the Russian Academy of Sciences, Moscow, Russia author Garmash, Vladimir M. National University of Science and Technology MISiS, Moscow, Russia author Tedzhetov, Valentin A. 2019-06-01 2019-06-01 2019 Modern Electronic Materials 2452-1779 2452-2449 5 61 68 2019 10.3897/j.moem.5.2.51353 https://moem.pensoft.net/article/51353/ https://moem.pensoft.net/article/51353/download/pdf/ https://moem.pensoft.net/article/51353/download/xml/ Practical application of crystals in optoelectronics and laser engineering requires the directions of optical axes and the types of oscillation centers be known, and this is an important and necessary condition. We have studied the infrared transmittance and absorption spectra of hexagonal lithium iodate α-LiIО3 crystals grown by open evaporation method in H2O and D2O solutions and natural lamellar monoclinic crystals of phlogopite and muscovite. The band gap of the test crystals has been determined from the transmittance spectra. The absorption spectra have provided information on the activation energy and wavelength of the activation centers related to the oscillations of protons, hydroxonium ions Н3О+, protium Н+, ОН- groups and HDO molecules. There has been a good correlation between the parameters of infrared spectra, thermally stimulated depolarization current spectra and nuclear magnetic resonance spectra. We have analyzed the possibility of oscillation center diagnostics based on infrared spectra which also allow determining the directions of optical axes. The experimental results confirm the possibility of using IR spectra for determining the type of oscillation centers and the presence of lattice anisotropy in test crystals. text/html en_US Modern Electronic Materials diagnostics infrared spectra thermally stimulated depolarization currents oscillation centers optical axes anisotropy nuclear magnetic resonance Spectral diagnostics of oscillation centers in crystals with hydrogen bonds Research Article

10.3897/j.moem.5.3.51573 2019-09-12 moem

National University of Science and Technology MISiS, Moscow, Russia author Kasimova, Valentina M. National University of Science and Technology MISiS, Moscow, Russia author Kozlova, Nina S. https://orcid.org/0000-0003-4057-9718 JSC Fomos-Materials, Moscow, Russia author Buzanov, Oleg A. https://orcid.org/0000-0002-7532-5710 National University of Science and Technology MISiS, Moscow, Russia author Zabelina, Evgeniya V. https://orcid.org/0000-0002-5844-5673 2019-09-12 2019-09-12 2019 Modern Electronic Materials 2452-1779 2452-2449 5 101 105 2019 10.1109/TNS.2016.2574773 10.1016/j.optmat.2013.07.002 10.1016/j.nima.2015.08.041 10.1109/NSSMIC.2013.6829685 10.1109/TNS.2013.2290319 10.1109/TNS.2012.2233497 Hanin V.M. Stsintillyatsionnyye protsessy v aktivirovannykh tseriyem keramikakh so strukturoy granata [Scintillation processes in cerium-activated ceramics with garnet structure]: diss. PhD in phys.-math. sci. St. Petersburg, 2017, 173 p. (In Russ.) 10.1016/j.nima.2018.11.101 10.1016/j.nima.2015.08.068 10.1002/adom.201400571 Meng F. Development and Improvement of Cerium Activated Gadolinium Gallium Aluminum Garnets Scintillators for Radiation Detectors by Codoping: PhD diss. Knoxville, 2015, 159 p. 10.1103/PhysRevApplied.2.044009 10.1016/j.nima.2015.06.043 10.1109/TNS.2013.2276101 10.1016/j.jcrysgro.2016.12.054 10.1016/j.optmat.2017.01.039 10.1016/j.nima.2016.02.004 10.1016/j.optmat.2016.09.005 10.1016/j.nima.2016.09.060 10.1109/NSSMIC.2011.6154387 10.1109/URALCON.2017.8120681 Landsberg G. S. Optika [Optics]. Moscow: Nauka, 1976, 296 p. (In Russ.) Application note. URL: https://www.agilent.com/cs/library/applications/application-refractive-index-cary-5000-uv-vis-5994-0052en-us-agilent.pdf (accessed: 15.02.2019) Borisenko S.I., Revinskaya O.G., Kravchenko N.S., Chernov A.V. Pokazatel’ prelomleniya sveta i metody yego eksperimental’nogo opredeleniya [The refractive index of light and methods of its experimental determination]. Tomsk: Tomskiy politekhnicheskiy universitet, 2014, 146 p. (In Russ.) Palik E.D. Handbook of optical constants of solids. New York: Academic Press, 1998, 3224 p. 10.1109/URALCON.2017.8120724 10.3897/j.moem.4.1.33240 Perelomova N.V., Tagieva M.M. Krystallofizika [Crystal Physics]. Мoscow: NUST MISiS, 2013, 408 p. (In Russ.) 10.1134/S1063774516030160 10.3897/j.moem.5.3.51573 https://moem.pensoft.net/article/51573/ https://moem.pensoft.net/article/51573/download/pdf/ https://moem.pensoft.net/article/51573/download/xml/ Scintillation materials capable of transforming absorbed high-energy particles into visible radiation photons find multiple applications including advanced medical visualization methods. Gd3Al2Ga3O12 : Ce is a promising oxygen-containing sсintillator for fabrication of detecting crystals of positron emission tomographs due to its unique properties, e.g. high density, high light yield, radiation hardness etc. However its kinetic parameters currently restrict its use in this field. Attempts at improving the luminescence rise and decay time kinetics by introducing additional impurities have become a top priority task for many researchers. Analyzing literary data one can conclude that the optical parameters of co-doped crystals have been studied insufficiently or have not been studied at all. We have studied Ca2+ and Zr4+ co-doped Gd3Al2Ga3O12 : Ce single crystals by optical spectroscopy in the 200–2200 nm. We have taken the optical transmittance, absorption and reflection spectra and measured the refractive indices. Dispersion curves have been obtained by approximation of experimental refractive indices using the Brewster method and the Cauchy equation. Material constants of these equations have been estimated for each of the co-doped crystals. text/html en_US Modern Electronic Materials Gd3Al2Ga3O12: Ce scintillation single crystal co-doping transmittance spectrophotometry absorption coefficient refractive index Brewster method approximation Effect of Ca2+ and Zr4+ co-doping on the optical properties of Gd3Al2Ga3O12: Ce single crystals Research Article

10.3897/j.moem.5.52500 2019-09-12 moem

Institute of Microelectronics Technology and High-Purity Materials of the Russian Academy of Sciences, Chernogolovka, Russia author Starkov, Vitaliy V. National University of Science and Technology MISiS, Moscow, Russia author Gosteva, Ekaterina A. Institute of Microelectronics Technology and High-Purity Materials of the Russian Academy of Sciences, Chernogolovka, Russia author Irzhak, Dmitry V. Institute of Microelectronics Technology and High-Purity Materials of the Russian Academy of Sciences, Chernogolovka, Russia author Roshchupkin, Dmitry V. 2019-09-12 2019-09-12 2019 Modern Electronic Materials 2452-1779 2452-2449 5 141 144 2019 10.3897/j.moem.5.52500 https://moem.pensoft.net/article/52500/ https://moem.pensoft.net/article/52500/download/pdf/ https://moem.pensoft.net/article/52500/download/xml/ The effect of photon annealing on deformation in the crystal structure of boron doped Cz-Si wafers has been studied using triple crystal X-ray diffraction. Conventional annealing of the entire surface of double-side polished silicon wafers with halogen lamps (photon annealing mode) and rapid thermal annealing produce compression deformation. Annealing with special phototemplate providing for local annealing of multiple separated wafer areas (local photon annealing mode) at relatively low wafer temperatures (less than 55 °C) produces tensile deformation. This effect however is not observed if the reverse side of the annealed wafer contains a mechanical gettering layer. A mechanism explaining the experimental results has been suggested and can be used for the synthesis of charge pumps in photoelectric converter structures. text/html en_US Modern Electronic Materials photoelectric converters local photon annealing charge pumps triple crystal X-ray diffraction phototemplate Study of the effect of local photon annealing on stress in silicon wafers Short Communication

10.3897/j.moem.5.3.46647 2019-09-12 moem

Kutateladze Institute of Thermophysics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia author Berdnikov, Vladimir S. 2019-09-12 2019-09-12 2019 Modern Electronic Materials 2452-1779 2452-2449 5 91 100 2019 Shashkov Yu.M. Vyrashchivanie monokristallov metodom vytyagivaniya [Single-crystal growth by extrusion]. Moscow: Metallurgia, 1982, 312 p. (In Russ.) 10.1016/0168-9002(96)00613-4 10.1016/0022-0248(81)90330-4 10.1134/1.1690410 10.1016/j.jcrysgro.2003.10.007 10.1016/j.jcrysgro.2004.11.087 10.1134/S1063774509040245 10.1134/S1063774511010226 10.1007/BF01050080 Berdnikov V.S., Panchenko V.I. Teplofizika kristallizatsii veshchestv i materialov [Thermophysics of crystallization of substances and materials]. Novosibirsk, 1987: 5–15. (In Russ.) Berdnikov V.S., Borisov V.L., Markov V.A., Panchenko V.I. Simulation of the hydrodynamics of melt in pulling crystals with a conical front and annular cross-section. Heat Transfer – Soviet Research, 1989; 21(6): 828–845. Berdnikov V.S., Panchenko V.I., Soloviev S.V. Teplofizika kristallizatsii i vysokotemperaturnoi obrabotki materialov [Thermophysics of crystallization and high-temperature processing of materials]. Novosibirsk, 1990: 162–199. (In Russ.) Berdnikov V.S., Markov V.A. Heat transfer in a horizontal layer with differently rotating boundaries on heating from below. Heat Transfer Research, 1999; 30(1): 209–212. 10.1023/A:1012375827219 10.1109/TNS.2014.2327996 10.1149/1.3096556 10.1016/j.jcrysgro.2018.02.010 10.1109/JSEN.2019.2911431 10.1016/j.rinp.2019.02.063 10.1007/978-3-642-69866-8_3 Polezhaev V.I., Bune A.V., Verezub N.A., Glushko G.S., Gryaznov B.L., Dubovik K.G., Nikitin C.A., Prostomolotov A.I., Fedoseev A .I., Cherkasov S.G. Matematicheskoe modelirovanie konvektivnogo teplomassoobmena na osnove uravnenii Nav’e-Stoksa [Mathematical Modeling of Convective Heat Transfer on the Basis of the Navier-Stokes Equations]. Moscow: Nauka, 1987. 274 p. (In Russ.) Nikitin N.V., Polezhaev V.I. Three-dimensional convective instability and temperature fluctuations during crystal growth by the Czochralski method. Izv. RAN. Mekhanika zhidkosti i gaza, 1999; (3): 26–39. 10.1016/S0022-0248(01)01317-3 Prostomolotov A.I., Milvidskii M.G. Modeling of thermal processes and defect formation during the growth and thermal annealing of dislocation-free silicon single crystals and wafers. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering, 2008; (3): 49–53. (In Russ.) Prostomolotov A.I. Coupled modeling of thermal processes and defect formation during the growth of dislocation-free silicon single crystals. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering, 2009; (2): 66–77. (In Russ.) 10.1149/1.3096557 Verezub N.A.1, Prostomolotov A.I. Thermal optimization of silicon single crystal growth on «Redmet-90M» puller. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering, 2010; (4): 22–25. (In Russ.) 10.1016/j.jcrysgro.2010.11.080 10.1134/S1063774514040075 10.1016/j.jcrysgro.2013.12.055 10.3103/S1062873817100069 10.3103/S1062873816010056 10.1016/j.jcrysgro.2018.03.013 10.1063/1.5028969 10.1016/j.jcrysgro.2017.11.021 10.1016/j.jcrysgro.2019.04.033 10.1016/j.jcrysgro.2019.06.029 10.1016/0022-0248(91)90260-C 10.1016/0022-0248(95)00090-9 Enger S., Basu B., Breuer M., Durst F. Computation of Buoyancy-Driven flow in a Czochralski crucibl / S. Enger, B. Basu, M. Brcuer, F. Durst. Proc. Fourth ISHMT/ASME Heat and Mass Transfer Conf. and Fifteenth Nat. Heat and Mass Transfer Conf. New Delhi (India): Tata McGraw-Hill Publ. Co. Ltd., 2000: 583–588. 10.1016/j.jcrysgro.2018.12.019 10.1016/0017-9310(84)90272-2 10.3897/j.moem.5.3.46647 https://moem.pensoft.net/article/46647/ https://moem.pensoft.net/article/46647/download/pdf/ https://moem.pensoft.net/article/46647/download/xml/ This work is a brief overview of experimental study results for hydrodynamics and convective heat exchange in thermal gravity capillary convection modes for the classic Czochralski technique setup obtained at the Institute of Thermophysics, Siberian Branch of the Russian Academy of Sciences. The experiments have been carried out at test benches which simulated the physics of the Czochralski technique for 80 and 295 mm diameter crucibles. Melt simulating fluids with Prandtl numbers Pr = 0.05, 16, 45.6 and 2700 have been used. Experiments with transparent fluids have been used for comparing the evolution of flow structure from laminar mode to well-developed turbulent mode. Advanced visualization and measurement methods have been used. The regularities of local and integral convective heat exchange in the crucible/melt/crystal system have been studied. The experiments have shown that there are threshold Grashof and Marangoni numbers at which the structure of the thermal gravity capillary flow undergoes qualitative changes and hence the regularities of heat exchange in the melt change. The effect of melt hydrodynamics on the crystallization front shape has been studied for Pr = 45.6. Crystallization front shapes have been determined for the 1 × 105 to 1.9 × 105 range of Grashof numbers. We show that the crystallization front shape depends largely on the spatial flow pattern and the temperature distribution in the melt. text/html en_US Modern Electronic Materials crystal growth Czochralski technique heat exchange thermal gravity capillary convection boundary layers laminar-turbulent transition local heat flows crystallization front shape Hydrodynamics and heat exchange of crystal pulling from melts. Part I: Experimental studies of free convection mode Review Article

10.3897/j.moem.5.3.51936 2019-09-12 moem

Algoritm-Opto Ltd., Kaliningrad, Russia author Gusev, Michael E. Harvard University, Boston, United States of America author Zakharov, Yuri N. 2019-09-12 2019-09-12 2019 Modern Electronic Materials 2452-1779 2452-2449 5 107 114 2019 10.3897/j.moem.5.3.51936 https://moem.pensoft.net/article/51936/ https://moem.pensoft.net/article/51936/download/pdf/ https://moem.pensoft.net/article/51936/download/xml/ The theoretical basis of a specialized technique for applying digital holographic interferometry to measure the parameters of surface acoustic waves is presented, a measuring system for visualization and quantitative analysis of the parameters of ultralow-amplitude high-frequency oscillations arising in electronic devices using surface acoustic waves is developed, and experimental results of the study of surface acoustic waves in crystals of lithium niobate are obtained. In this case, to ensure the possibility of recording precision double-exposure interferograms of high-frequency surface acoustic waves, a picosecond pulsed laser with two-stage frequency multiplication was used as a radiation source, and to increase the spatial resolution of the system with the possibility of observing a wide field of view, an adjustable optical zoom of the incoming image was applied to the matrix input (based on charge-coupled devices) of the recording camera and digital zoom was used for obtained interferogram. We achieved the measuring sensitivity of the surface acoustic waves amplitude and spatial-temporal resolution allowing visualization and measurement of surface acoustic waves with amplitudes of the order of 1 nm and frequencies of the order of 10 MHz, which is far beyond the capabilities of standard methods of holographic interferometry. text/html en_US Modern Electronic Materials surface acoustic waves holographic interferometry digital holography Holographic measurement of surface acoustic wave parameters in crystals Research Article

10.3897/j.moem.5.52812 2019-09-12 moem

National University of Science and Technology MISiS, Moscow, Russia author Bublik, Vladimir T. National University of Science and Technology MISiS, Moscow, Russia author Voronova, Marina I. https://orcid.org/0000-0003-0233-7902 National University of Science and Technology MISiS, Moscow, Russia author Shcherbachev, Kirill D. https://orcid.org/0000-0003-4455-9730 JSC Optron, Moscow, Russia author Mezhennyi, Mikhail V. JSC Optron, Moscow, Russia author Reznik, Vladimir Ya. 2019-09-12 2019-09-12 2019 Modern Electronic Materials 2452-1779 2452-2449 5 133 139 2019 10.3897/j.moem.5.52812 https://moem.pensoft.net/article/52812/ https://moem.pensoft.net/article/52812/download/pdf/ https://moem.pensoft.net/article/52812/download/xml/ Gettering is defined as a process by which metal impurities in the device region are reduced by localizing them in predetermined, passive regions of the silicon wafer. Internal or intrinsic gettering is an effective way to reduce the contamination in active regions. The generation of internal getters is based on the decomposition of the supersaturated oxygen solid solution in silicon, which favours the formation of a complex defect system in silicon that consists of various precipitate/dislocation agglomerates. Regularities of microdefect formation during oxygen solid solution decomposition in silicon have been studied. We show that actual solid solution supersaturation, temperature and heat treatment duration determine the structure of the solid solution. Combining these factors, including heat treatment parameters, one can control solid solution decomposition rate and SiOx precipitate sizes and quantity. The methods of X-ray diffuse scattering and transmission electron microscopy have shown high efficiency for studying the effect of heat treatment in crystals. For annealing at 450 °C, solid solution decomposition occurs at high supersaturation degrees, and concentration inhomogeneity regions may form at an early decomposition stage over the actual annealing time (up to 40 h). With an increase in the temperature of subsequent annealing to 650 °C, local regions with above-average oxygen supersaturation degrees increase the efficiency of oxygen solid solution decomposition. Further, an increase in annealing temperature to T > 1000 °С results in a more intense generation of the largest precipitates at the expense of the smaller ones. Once the precipitate sizes become sufficiently large, the elastic stresses start to relax, leading to partial incoherence and the generation of dislocations around the particles. This type of defect structure seems to be the most efficient getter. text/html en_US Modern Electronic Materials X-ray diffuse scattering silicon heat treatment getter Regularities of microdefect formation in silicon during heat treatment for internal getter synthesis Research Article

10.3897/j.moem.5.3.52308 2019-09-12 moem

Belarusian State University, Minsk, Belarus author Haiduk, Yulyan S. KTH, Royal Institute of Technology, Stockholm, Sweden author Khort, Alexander A. https://orcid.org/0000-0002-3561-5625 Belarusian State University, Minsk, Belarus author Makhavikou, Maxim https://orcid.org/0000-0002-5738-0986 Belarusian State University, Minsk, Belarus author Savitsky, Alexander A. 2019-09-12 2019-09-12 2019 Modern Electronic Materials 2452-1779 2452-2449 5 115 125 2019 10.3897/j.moem.5.3.52308 https://moem.pensoft.net/article/52308/ https://moem.pensoft.net/article/52308/download/pdf/ https://moem.pensoft.net/article/52308/download/xml/ Using oxide compositions is a promising method of increasing the sensitivity and selectivity of semiconductor gas sensors on the basis of SnO2, In2O3, WO3 and other oxides. We have studied nanocrystalline tungsten oxide (WO3), indium oxide (In2O3), cobalt oxide (Co3O4) and mixed oxide compositions with different WO3/In2O3 and WO3/Co3O4 ratios synthesized using the sol-gel method after xerogel annealing at 400–600 °C. The morphology, phase composition and structure of the materials have been studied using X-ray diffraction, infrared spectroscopy, scanning electron microscopy and transmission electron microscopy. We showed that stable structures can be produced in WO3–In2O3 and WO3–Со3O4 nanoheterogeneous compositions. The growth of grain size in WO3 and In2O3, WO3 and Co3O4 during heat treatment of mixed compositions occurs slower than in simple oxides. An increase in the gas sensitivity of the compositions in comparison with simple oxides can be accounted for by smaller grain sizes and hence larger specific surface area, as well as by the dependence of grain surface state on material composition. Both compositions exhibit the greatest nitrogen dioxide response at 130–150 °C and the greatest carbon oxide response at above 230 °C. We have produced low-power nitrogen dioxide sensors with a sensitivity of << 1 ppm and power consumption of ≤ 85 mW. text/html en_US Modern Electronic Materials tungsten oxide indium oxide cobalt oxide semiconductor gas sensor Structure and gas sensitivity of WO3–In2O3 and WO3–Co3O4 oxide compositions Research Article

10.3897/j.moem.5.3.52691 2019-09-12 moem

Tajik Technical University named after M.S. Osimi, Dushanbe, Tajikistan author Ganiev, Izatullo N. Dangarinsk State University, Dangara, Tajikistan author Abdulakov, Aslam P. Academy of Sciences of the Republic of Tajikistan, Dushanbe, Tajikistan author Jayloev, Jamshed H. Dangarinsk State University, Dangara, Tajikistan author Aliev, Firdavs A. Energy Institute of Tajikistan, Bokhtariyon, Tajikistan author Rashidov, Akram R. 2019-09-12 2019-09-12 2019 Modern Electronic Materials 2452-1779 2452-2449 5 127 132 2019 10.3897/j.moem.5.3.52691 https://moem.pensoft.net/article/52691/ https://moem.pensoft.net/article/52691/download/pdf/ https://moem.pensoft.net/article/52691/download/xml/ The economic feasibility of using aluminum as a conductive material is explained by the favorable ratio of its cost to the cost of copper. In addition, one should take into account the factor that the cost of aluminum has remained virtually unchanged for many years. When using conductive aluminum alloys for the manufacture of thin wire, winding wire, etc. Certain difficulties may arise in connection with their insufficient strength and a small number of kinks before fracture. In recent years, aluminum alloys have been developed, which even in a soft state have strength characteristics that allow them to be used as a conductive material. One of the promising areas for the use of aluminum is the electrical industry. Conducting aluminum alloys type of the E-AlMgSi (Aldrey) are representatives of this group of alloys and belong to heat-strengthened alloys. They are distinct by high strength and good ductility. These alloys, with appropriate heat treatment, acquire high electrical conductivity. The producing made from it are used almost exclusively for overhead power lines. The paper presents the results of a study of the anodic behavior of aluminum E-AlMgSi (Aldrey) alloy with tin in a medium electrolyte of 0.03; 0.3 and 3.0% NaCl. Corrosion-electrochemical studies of the alloys were carried out by the potentiostatic method in potentiostat PI-50-1.1 at a potential sweep speed of 2 mV/s. It is shown that alloying E-AlMgSi (Aldrey) alloy with tin increases its corrosion resistance by 20%. The main electrochemical potentials of the E-AlMgSi (Aldrey) alloy, when doped with tin, shift to a positive range of values, and from the concentration of sodium chloride in the negative direction of the ordinate. text/html en_US Modern Electronic Materials AlMgSi (Aldrey) alloy tin potentiostatic method NaCl electrolyte free potential corrosion potential corrosion pitting potential corrosion corrosion rate Corrosion and electrohemical behavior of aluminum conductor E-AlMgSi (Aldrey) alloy with tin in a medium electrolite NaCl Research Article

10.3897/j.moem.5.4.52810 2019-12-31 moem

SSPA «Scientific-Practical Materials Research Centre of NAS of Belarus», Minsk, Belarus author Artsiukh, Evgenij Technische Universität Dresden, Dresden, Germany author Suchaneck, Gunnar https://orcid.org/0000-0002-9440-2232 2019-12-31 2019-12-31 2019 Modern Electronic Materials 2452-1779 2452-2449 5 151 157 2019 10.3897/j.moem.5.4.52810 https://moem.pensoft.net/article/52810/ https://moem.pensoft.net/article/52810/download/pdf/ https://moem.pensoft.net/article/52810/download/xml/ Strontium ferromolybdate double perovskite is a promising candidate for room-temperature spintronic applications. Nevertheless, SFMO has not yet found wide application in spintronics. This is attributed to the low reproducibility of its magnetic properties which partially originates from their strong dependence on the ordering degree of Fe and Mo ions in the Bʹ and Bʺ sublattices of double perovskite A2BʹBʺO6. In this work, we have considered an express method of determining the degree of disorder in strontium ferromolybdate. The sublattice occupation with Fe and Mo ions has been estimated for stoichiometric and nonstoichiometric Sr2FeMoO6-δ with a 5% Fe and Mo excess, respectively. We have calculated the intensity ratio between the superstructure (101) XRD peak and the most intense (112 + 200) peak. The calculated curves have been fitted to an analytical expression of a similar case known from literature. The calculation results obtained using the proposed method are within a ± 25 % agreement with Rietveld analysis of experimental data. Thus, this method can be used as an alternative to Rietveld analysis if the exposure time during X-ray diffraction experiment was insufficient. We have discussed the dependence of the I (101)/I (112 + 200) peak intensity ratio on various factors including instrumental broadening of diffraction peaks, peak twinning due to grain size reduction, thin film lattice parameter variation due to substrate lattice mismatch and lattice parameter variation due to oxygen vacancies. The relevance of the method is the evaluation of the degree of superstructure ordering in Sr2FeMoO6-δ without large time consumption for X-ray diffraction pattern recording and Rietveld data processing which may be essential when dealing with large amounts of experimental data. text/html en_US Modern Electronic Materials strontium ferromolybdate atomic ordering degree X-ray structural analysis Evaluation of crystallographic ordering degree of magnetically active ions in Sr2FeMoO6-δ by means of the (101) X-ray peak intensity Research Article

10.3897/j.moem.5.4.46694 2019-12-31 moem

Smart Materials Analytical Research and Technology, Changanacherry, India author Abraham, Kevin Smart Materials Analytical Research and Technology, Changanacherry, India author Thomas, Alexander K. Kuriakose Elias College, Kottayam, India author Thomas, Jini St. Aloysius College, Edathua, India author K.V., Saban 2019-12-31 2019-12-31 2019 Modern Electronic Materials 2452-1779 2452-2449 5 145 150 2019 10.3897/j.moem.5.4.46694 https://moem.pensoft.net/article/46694/ https://moem.pensoft.net/article/46694/download/pdf/ https://moem.pensoft.net/article/46694/download/xml/ The composite materials of 0.5 Sm1.5Sr0.5NiO4, 0.5 CCTO and 0.75 Sm1.5Sr0.5NiO4, 0.25 CCTO mixtures were prepared through the conventional solid state reaction in an attempt to obtain good dielectric properties for practical applications. The structural properties were determined by powder X-ray diffraction and single phases were obtained for Sm1.5Sr0.5NiO4 and CaCu3Ti4O12 compounds. The dielectric studies analysed over a range of frequencies (100 KHz–10 MHz) and temperatures (30 to 200 °C) revealed a desired dielectric constant values with a low steady nature of dielectric loss factor. Through impedance spectroscopy, the attained dielectric behaviour was due to the highly insulating grain boundaries at lower frequencies and semiconducting grains at higher frequencies. text/html en_US Modern Electronic Materials composite dielectric constant impedance spectroscopy powder XRD Steady nature of dielectric behaviour in Sm1.5Sr0.5NiO4 – CCTO composites Research Article

10.3897/j.moem.5.4.52068 2019-12-31 moem

Belarusian State University, Department of Energy Physics, Minsk, Belarus author Fedotov, Alexander K. https://orcid.org/0000-0002-7008-847X Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus National Research Nuclear University MEPhI, Moscow, Russia author Prishchepa, Sergey L. Belarusian State University, Minsk, Belarus author Fedotov, Alexander S. https://orcid.org/0000-0002-3718-3184 Belarusian State University, Minsk, Belarus Research Scientific Institute for Nuclear Problems of Belarusian State University, Minsk, Belarus author Gumennik, Vladzislaw E. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus National Research Nuclear University MEPhI, Moscow, Russia author Komissarov, Ivan V. Research Institute for Physical Chemical Problems of the Belarusian State University, Minsk, Belarus author Konakov, Artjom O. Research Institute for Physical Chemical Problems of the Belarusian State University, Minsk, Belarus author Vorobyova, Svetlana A. https://orcid.org/0000-0003-2221-909X Research Institute for Nuclear Problems of Belarusian State University, Minsk, Belarus author Kharchenko, Andrei A. Research Institute for Physical Chemical Problems of the Belarusian State University, Minsk, Belarus author Ivashkevich, Oleg A. 2019-12-31 2019-12-31 2019 Modern Electronic Materials 2452-1779 2452-2449 5 165 173 2019 10.3897/j.moem.5.4.52068 https://moem.pensoft.net/article/52068/ https://moem.pensoft.net/article/52068/download/pdf/ https://moem.pensoft.net/article/52068/download/xml/ Graphene applications in electronics require experimental study of the formation of high-quality Ohmic contacts and deeper understanding of electron transport mechanisms at metal/grapheme contacts. We have studied carrier transport in twisted CVD graphene decorated with electrodeposited Co particles forming Ohmic contacts with graphene layers. We have compared layer resistivity as a function of temperature and magnetic field R□(T, B) for as-synthesized and decorated twisted graphene on silicon oxide substrates. Experiments have proven the existence of negative (induction < 1 Tl) and positive (induction > 1 Tl) contributions to magnetoresistance in both specimen types. The R□(T, B) functions have been analyzed based on the theory of 2D quantum interference corrections to Drude conductivity taking into account competition of hopping conductivity mechanism. We show that for the experimental temperature range (2–300 K) and magnetic field range (up to 8 Tl), carrier transport description in test graphene requires taking into account at least three interference contributions to conductivity, i.e., from weak localization, intervalley scattering and pseudospin chirality, as well as graphene buckling induced by thermal fluctuations. text/html en_US Modern Electronic Materials graphene graphene/metal structures electron transport magnetostriction Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD graphene Review Article

10.3897/j.moem.5.4.52311 2019-12-31 moem

Institute of Microelectronics Technology and High-Purity Materials of the Russian Academy of Sciences, Chernogolovka, Russia author Kulanchikov, Yuriy O. Institute of Microelectronics Technology and High-Purity Materials of the Russian Academy of Sciences, Chernogolovka, Russia author Vergeles, Pavel S. Institute of Microelectronics Technology and High-Purity Materials of the Russian Academy of Sciences, Chernogolovka, Russia author Yakimov, Eugene B. 2019-12-31 2019-12-31 2019 Modern Electronic Materials 2452-1779 2452-2449 5 175 179 2019 10.3897/j.moem.5.4.52311 https://moem.pensoft.net/article/52311/ https://moem.pensoft.net/article/52311/download/pdf/ https://moem.pensoft.net/article/52311/download/xml/ Charging of dielectric targets by electron irradiation is a well-known phenomenon which should be taken into account in characterization of dielectric materials and coatings with electron microscopy, in electron beam lithography, in development of dielectric coatings for spacecrafts and other fields of science and engineering. Charging kinetics is strongly affected by spatial distribution of electrons and holes formed by irradiation. At the experimental electron beam energy electron penetration depth is smaller than dielectric thickness and this allows identifying the contribution of excess carrier transport to trap formation at the SiO2/Si interface. Low-energy electron beams have been shown to substantially affect C–V curve slope, i.e., to form traps at the interface. We have studied the effect of bias applied to the test structure before and after electron beam irradiation. The experiment has shown that bias of either polarity applied to the test MOS structure before low-energy electron beam irradiation practically does not affect the C–V curves of the test structure. Positive bias applied to the metallization layer during low-energy electron beam irradiation has a strong effect on the C–V curve pattern while negative bias affects the C–V curves but slightly. Study of the stability of the changes caused by electron beam irradiation has shown that the C–V curves of the test structure restore slowly even at room temperature. Application of negative bias decelerated charge relaxation. text/html en_US Modern Electronic Materials silicon oxide low-energy electron beam MOS structure C–V curves Effect of low-energy electron irradiation on voltage-capacity curves of Al/SiO2/Si structure Research Article

10.3897/j.moem.5.4.52932 2019-12-31 moem

National University of Science and Technology MISiS, Moscow, Russia author Bublik, Vladimir T. RMT Ltd, Moscow, Russia National University of Science and Technology MISiS, Moscow, Russia author Lavrentev, Mikhail G. JSC «Giredmet», Moscow, Russia author Osvenskii, Vladimir B. National University of Science and Technology MISiS, Moscow, Russia JSC «Giredmet», Moscow, Russia author Parkhomenko, Yuri N. https://orcid.org/0000-0002-1970-9867 A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow, Russia National University of Science and Technology MISiS, Moscow, Russia author Tabachkova, Nataliya Yu. https://orcid.org/0000-0002-0169-5014 2019-12-31 2019-12-31 2019 Modern Electronic Materials 2452-1779 2452-2449 5 181 185 2019 10.3897/j.moem.5.4.52932 https://moem.pensoft.net/article/52932/ https://moem.pensoft.net/article/52932/download/pdf/ https://moem.pensoft.net/article/52932/download/xml/ Major advantage of extruded Bi2Te3 based thermoelectric materials is high mechanical strength compared with that of melt-crystallized materials. Mechanical properties are of special importance for thermogenerator module applications where thermogenerator branches may undergo elevated thermal stresses due to large temperature differences at the modules. Since extrusion is typically a high-temperature process the structure of extruded materials is controlled by the plastic deformation in multiple slip systems resulting in the formation of a final deformed structure. The grain orientations are predominantly such that the most probable cleavage plane orientation is parallel to the extrusion axis. Recovery processes occur simultaneously and different recrystallization stages may take place. In the latter case the deformed texture may be destroyed. Structure evolution along the extruded rod of Bi2Se0.3Te2.7 ternary solid solution was studied with metallography and X-ray diffraction. Extrusion was interrupted for the study and so the specimen was a whole rod the initial part of which was the extrusion billet and the final part was the as-extruded material. The structure of the material is formed by competitive processes of dislocation generation and annealing. The plastic deformation energy is the highest in the extruder zone of the rod. Both the hardening processes and the texture are controlled by the plastic deformation mechanism. Plastic deformation is accompanied by generation of defects that are most likely vacancy type ones. text/html en_US Modern Electronic Materials hot extrusion thermoelectric material bismuth chalcogenides plastic deformation Structure formation by hot extrusion of thermoelectric bismuth chalcogenide solid solution rods Research Article

10.3897/j.moem.5.4.54006 2019-12-31 moem

Aveiro University, Aveiro, Portugal author Sobolev, Nikolai A. https://orcid.org/0000-0002-9420-8130 2019-12-31 2019-12-31 2019 Modern Electronic Materials 2452-1779 2452-2449 5 187 188 2019 10.3897/j.moem.5.4.54006 https://moem.pensoft.net/article/54006/ https://moem.pensoft.net/article/54006/download/pdf/ https://moem.pensoft.net/article/54006/download/xml/ Review on the book Kharchenko V. A., Smirnov L. S., Solov’ev S. P., Stas’ V. F. Nuclear Doping of Semiconductor Materials (second edition, revised). Executive Editor, Dr. Sci. (Engineering) V.A. Kharchenko text/html en_US Modern Electronic Materials semiconductors doping nuclear reactions silicon single crystals neutron irradiation radiation defects annealing electrophysical properties Review on the book Nuclear Doping of Semiconductor Materials Review Article

10.3897/j.moem.5.4.51788 2019-12-31 moem

Tver State Univer, Tver, Russia author Talyzin, Igor V. Tver State Univer, Tver, Russia author Samsonov, Vladimir M. 2019-12-31 2019-12-31 2019 Modern Electronic Materials 2452-1779 2452-2449 5 159 164 2019 10.3897/j.moem.5.4.51788 https://moem.pensoft.net/article/51788/ https://moem.pensoft.net/article/51788/download/pdf/ https://moem.pensoft.net/article/51788/download/xml/ Phase change memory is based on changes in the optical, electrical or other properties of materials during phase transitions, e.g. an amorphous to crystalline transition. Currently existing and potential applications of this memory are primarily based on multicomponent alloys of metals and semiconductors. However single-component nanoparticles including Si ones are also of interest as promising nanosized memory cells. The potential for developing this type of memory cells is confirmed by the fact that the optical absorption index of bulk amorphous silicon is of the same order of magnitude as that of crystalline silicon. Certainly this phenomenon can hardly be implemented with a single nanoparticle the size of which is within light wavelength. Using molecular dynamics and the Stillinger-Weber potential we have studied the regularities of melting and the conditions of crystallization of silicon nanoparticles containing within 105 atoms. We have shown that cooling of nanosized silicon drops at a 0.2 TK/s rate or higher rates causes their amorphous transition whereas single-component nanosized metallic drops crystallize in molecular dynamics experiments even at a 1 TK/s rate. Further heating of amorphous silicon nanoparticles containing above 5 ∙ 104 atoms causes their crystallization in a specific temperature range from 1300 to 1400 K. We have concluded that there is a possibility of developing phase change memory cells on the basis of the above phase transitions. An amorphous transition of a nanoparticle can be achieved by its melting and further cooling to room temperature at a 0.2 TK/s rate whereas a crystalline transition, by its heating to 1300–1400 K at a 0.2 TK/s rate followed by cooling. Results of molecular dynamics experiments suggest there is a minimum silicon nanoparticle size for which the development of phase change memory cells becomes theoretically impossible at a given temperature change rate. For a 0.2 TK/s temperature change rate this minimum size is 12.4 nm (number of atoms approx. 5 ∙ 104). text/html en_US Modern Electronic Materials molecular dynamics Stillinger-Weber potential silicon nanoparticles phase change memory cells Outlooks for development of silicon nanoparticle memory cells Research Article

10.3897/j.moem.6.1.55165 2020-03-30 moem

North-Caucasus Federal University, Stavropol , Russia author Mar’ina, Ul’ana A. North-Caucasus Federal University, Stavropol , Russia author Vorob’ev, Viktor A. North-Caucasus Federal University, Stavropol , Russia author Mar’in, Alexandr P. 2020-03-30 2020-03-30 2020 Modern Electronic Materials 2452-1779 2452-2449 6 1 31 36 2020 10.3897/j.moem.6.1.55165 https://moem.pensoft.net/article/55165/ https://moem.pensoft.net/article/55165/download/pdf/ https://moem.pensoft.net/article/55165/download/xml/ Existing calcium gallate CaGa2O4 based luminescent materials radiating in visible IR region have been reviewed. IR luminophores have been studied but slightly but their practical implementation is of interest. CaGa2O4 specimens activated with Yb3+ rare-earth ions have been synthesized using the solid-state method. The structure and luminescent properties of CaGa2O4 : Yb3+ have been studied. CaGa2O4 : Yb3+ excitation with 940 and 980 nm radiation generates luminescence in the 980–1100 nm region. Data on the electron level structure in Yb3+ ions suggest that the excitation and luminescence occur directly in the Yb3+ ions with only a passive role of the base lattice. The luminescence spectra contain three peaks at 993, 1025 and 1080 nm. These luminescence peaks are caused by electron optical transitions from excited to main state in Yb3+ ions. 993 nm band luminescence intensity has been studied as a function of Yb3+ activator ions concentration. Introduction of Na+ ions into the luminophore increases IR luminescence intensity. Optimum (Ca1-x-yYbxNay)Ga2O4 luminophore composition has been suggested at which the 993 nm luminescence intensity is the highest. text/html en_US Modern Electronic Materials luminophores gallates CaGa2O4 rare-earth elements Yb3+. IR luminescence of CaGa2O4 : Yb3+ excited by 940 and 980 nm radiation Research Article

10.3897/j.moem.6.1.53248 2020-03-30 moem

Engineering Institute of Zaporizhzhya National University, Zaporizhzhia, Ukraine author Kritskaya, Tatyana V. Zaporozhye Machine-Building Design Bureau Progress State Enterprise named after Academician A.G. Ivchenko, Zaporizhzhia, Ukraine author Zhuravlev, Vladimir N. Kutateladze Institute of Thermophysics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia author Berdnikov, Vladimir S. 2020-03-30 2020-03-30 2020 Modern Electronic Materials 2452-1779 2452-2449 6 1 1 7 2020 10.3897/j.moem.6.1.53248 https://moem.pensoft.net/article/53248/ https://moem.pensoft.net/article/53248/download/pdf/ https://moem.pensoft.net/article/53248/download/xml/ We have improved the well-known Czochralski single crystal silicon growth method by using two argon gas flows. One flow is the main one (15–20 nl/min) and is directed from top to bottom along the growing single crystal. This flow entrains reaction products of melt and quartz crucible (mainly SiO), removes them from the growth chamber through a port in the bottom of the chamber and provides for the growth of dislocation-free single crystals from large weight charge. Similar processes are well known and have been generally used since the 1970s world over. The second additional gas flow (1.5–2 nl/min) is directed at a 45 arc deg angle to the melt surface in the form of jets emitted from circularly arranged nozzles. This second gas flow initiates the formation of a turbulent melt flow region which separates the crystallization front from oxygen-rich convective flows and accelerates carbon evaporation from the melt. It has been confirmed that oxygen evaporated from the melt (in the form of SiO) acts as transport agent for nonvolatile carbon. Commercial process implementation has shown that carbon content in as-grown single crystals can be reduced to below the carbon content in the charge. Single crystals grown with two argon gas flows have also proven to have highly macro- and micro-homogeneous oxygen distributions, with much greater lengths of single crystal portions in which the oxygen concentration is constant and below the preset limit. Carbon contents of 5–10 times lower than carbon content in the charge can be achieved with low argon gas consumption per one growth process (15–20 nl/min vs 50–80 nl/min for conventional processes). The use of an additional argon gas flow with a 10 times lower flowrate than that of the main flow does not distort the pattern of main (axial) flow circumvention around single crystal surface, does not hamper the “dislocation-free growth” of crystals and does not increase the density of microdefects. This suggests that the new method does not change temperature gradients and does not produce thermal shocks that may generate thermal stresses in single crystals. text/html en_US Modern Electronic Materials Czochralski method silicon melt single crystal argon gas main flow additional flow homogeneity oxygen carbon. Potential of using inert gas flows for controlling the quality of as-grown silicon single crystal Research Article

10.3897/j.moem.6.1.55277 2020-03-30 moem

V. I. Nikitin Institute of Chemistry, Academy of Sciences of the Republic of Tajikistan, Dushanbe, Tajikistan author Ganiev, Izatullo N. Dangarinsk State University, Dangara, Tajikistan author Aliev, Firdavs A. Tajik Technical University named after academician M.S. Osimi, Dushanbe, Tajikistan author Odinazoda, Haydar O. Institute of Chemistry named after V.I. Nikitina, Academy of Sciences of the Republic of Tajikistan, Dushanbe, Tajikistan author Safarov, Ahror M. V. I. Nikitin Institute of Chemistry, Academy of Sciences of the Republic of Tajikistan, Dushanbe, Tajikistan author Jayloev, Jamshed H. 2020-03-30 2020-03-30 2020 Modern Electronic Materials 2452-1779 2452-2449 6 1 25 30 2020 10.3897/j.moem.6.1.55277 https://moem.pensoft.net/article/55277/ https://moem.pensoft.net/article/55277/download/pdf/ https://moem.pensoft.net/article/55277/download/xml/ Aluminum is a metal having permanently broadening applications. Currently aluminum and its alloys successfully replace conventional metals and alloys in a number of application fields. The wide use of aluminum and its alloys is primarily stipulated by its advantageous properties e.g. low density, high corrosion resistance and electrical conductivity as well as the possibility of applying protective and decorative coatings. In combination with great abundance and relatively low cost which has been almost constant in recent years, this permanently broadens the application range of aluminum. The electrochemical industry is one of the promising application fields of aluminum. The E-AlMgSi type (Aldrey) conductor aluminum alloy has high strength and ductility. This alloy acquires high electrical conductivity upon appropriate heat treatment. Products made from it are used almost exclusively for overhead power lines. This work presents data on the temperature dependence of heat capacity, heat conductivity and thermodynamic functions of the E-AlMgSi (Aldrey) aluminum alloy doped with gallium. The studies have been carried out in "cooling" mode. It has been shown that with an increase in temperature the heat capacity and thermodynamic functions of E-AlMgSi (Aldrey) alloy doped with gallium increase while the Gibbs energy decreases. Gallium doping to 1 wt.% reduces the heat capacity, enthalpy and entropy of the initial alloy and increases the Gibbs energy. text/html en_US Modern Electronic Materials aluminum E-AlMgSi (Aldrey) alloy gallium heat capacity heat conductivity "cooling" mode enthalpy entropy Gibbs energy Heat capacity and thermodynamic functions of E-AlMgSi (Aldrey) aluminum conductor alloy doped with gallium Research Article

10.3897/j.moem.6.1.55056 2020-03-30 moem

Molecular Electronics Research Institute , Zelenograd, Moscow, Russia author Balan, Nikita N. Molecular Electronics Research Institute , Zelenograd, Moscow, Russia author Ivanov, Vladidmir V. Molecular Electronics Research Institute, Zelenograd, Moscow, Russia author Kuzovkov, Alexey V. Molecular Electronics Research Institute, Zelenograd, Moscow, Russia author Sokolova, Evgenia V. Molecular Electronics Research Institute, Zelenograd, Moscow, Russia author Shamin, Evgeniy S. https://orcid.org/0000-0002-0470-350X 2020-03-30 2020-03-30 2020 Modern Electronic Materials 2452-1779 2452-2449 6 1 37 45 2020 10.3897/j.moem.6.1.55056 https://moem.pensoft.net/article/55056/ https://moem.pensoft.net/article/55056/download/pdf/ https://moem.pensoft.net/article/55056/download/xml/ Main currently used resist mask formation models and problems solved have been overviewed. Stages of "full physical simulation" have been briefly analyzed based on physicochemical principles for conventional diazonapthoquinone (DNQ) photoresists and chemically enhanced ones. We have considered the concepts of the main currently used compact models predicting resist mask contours for full-scale product topologies, i.e., VT5 (Variable Threshold 5) and CM1 (Compact Model 1). Computation examples have been provided for full and compact resist mask formation models. Full resist mask formation simulation has allowed us to optimize the lithographic stack for a new process. Optimal thickness ratios have been found for the binary anti-reflecting layers used in water immersion lithography. VT5 compact model calibration has allowed us to solve the problem of optimal calibration structure sampling for maximal coverage of optical image parameters space while employing the minimal number of structures. This problem has been solved using cluster analysis. Clustering has been implemented using the k-means method. The optimum sampling is 300 to 350 structures, the rms error being 1.4 nm which is slightly greater than the process noise for 100 nm structures. The use of SEM contours for VT5 model calibration allows us to reduce the rms error to 1.18 nm for 40 structures. text/html en_US Modern Electronic Materials photoresist projection photolithography VT5 CM1 k-means clustering method. Basic approaches to simulation of resist mask formation in computational lithography Research Article

10.3897/j.moem.6.1.54811 2020-03-30 moem

Southwest State University, Kursk, Russia author Kuzmenko, Alexander P. Southwest State University, Kursk, Russia author Naing, Thet Phyo Southwest State University, Kursk, Russia author Kuzko, Andrey E. Southwest State University, Kursk, Russia author Kochura, Alexey V. Southwest State University, Kursk, Russia author Than, Myo Min Southwest State University, Kursk, Russia author Aung, Nay Win 2020-03-30 2020-03-30 2020 Modern Electronic Materials 2452-1779 2452-2449 6 1 17 23 2020 10.3897/j.moem.6.1.54811 https://moem.pensoft.net/article/54811/ https://moem.pensoft.net/article/54811/download/pdf/ https://moem.pensoft.net/article/54811/download/xml/ Specific features and regularities of self-assembly and self-organization of multi-walled carbon nanotubes (MWCNT) have been studied for diffusion-limited conditions (method of drops) in water-based (deionized water) colloidalal solutions with aerosil exposed to DC electric fields with magnitudes of 15 to 25 V. Studies of hierarchical structure formation during drop evaporation in uniform electric fields have revealed the formation of 40–120 nm sized linear piecewise formations, 25–45 nm sized fractal structures and 250 nm sized diffuse structures from MWCNT – COOH + aerosil + H2Odw. The structures have been studied using confocal microscopy, X-ray diffraction, Raman scattering, atomic force microscopy, IR spectroscopy and scanning electron microscopy. The sizes of the observed micro- and nanostructures decrease following the hyperbolic law d = 1/U in the approximation d → 2R, their growth rate increasing as U2. We show that intense ultrasonication of functionalized MWCNT – COOH + aerosil + H2Odw in colloidal solutions causes the formation of the so-called “breathing" modes in axis centered single-walled carbon nanotubes. This is confirmed by short-wave Raman scattering excitation and enables the existence of both combined sp2-hybridization types with π- and σ- carbon bonds and the metallic and semiconductor conductivity types in the material thus showing good promise of these structures for nanoelectronics. text/html en_US Modern Electronic Materials self-organization and self-assembly stabilized multiwalled carbon nanotubes sp 2-hybridization π- and σ-carbon bonds controlled ordering of carbon nanotubes Formation of hierarchical structures from functionalized multi-walled carbon nanotubes in aerosil containing solutions Research Article

10.3897/j.moem.6.1.55282 2020-03-30 moem

Ishlinsky Institute for Problems in Mechanics of the Russian Academy of Sciences, Moscow, Russia author Prostomolotov, Anatoly I. Ishlinsky Institute for Problems in Mechanics of the Russian Academy of Sciences, Moscow, Russia author Verezub, Nataliya A. 2020-03-30 2020-03-30 2020 Modern Electronic Materials 2452-1779 2452-2449 6 1 9 16 2020 10.3897/j.moem.6.1.55282 https://moem.pensoft.net/article/55282/ https://moem.pensoft.net/article/55282/download/pdf/ https://moem.pensoft.net/article/55282/download/xml/ A new, relatively simple and highly efficient modification of the directional melt crystallization method in the form of a multi-cassette process has been considered. This study is based on Russian Patents and technological studies conducted at National Research and Technological University MISiS. As a result, mathematical models of a multi-cassette method have been developed for 3D radiation and conduction analysis of thermal processes in the entire volume of the heating unit and 2D analysis of convection and conduction heat exchange in a separate cassette. Parameters have been calculated on the basis of these mathematical models for clarifying the effect of heating unit component arrangement and dimensions on the formation of thermal fields in cassette units, the effect of vertical homogeneity of heat supply to the cassette unit and heating power reduction rate during crystallization on the shape of the crystallization front, as well as the effect of small asymmetry in cassette design and violation of cassette bottom cooling homogeneity on convection and asymmetrical heat transfer. Application of the conductive and radiative heat exchange model to the entire heating unit has allowed us to calculate process parameters on the basis of which we have analyzed the effect of heating unit components, their arrangement and temperature on the heat exchange conditions at the cassette unit boundaries. Application of the convective and conductive model to one growth cassette has shown that asymmetrical design and boundary thermal conditions as well as unstable vertical temperature gradient lead to the formation of convection vortices and substantial crystallization front deviation from planar shape. Calculations on the basis of the convective mass exchange model have shown that an increase in the crystallization rate by one order of magnitude greatly increases the tellurium flow into the crystal thus substantially altering the melt composition in the vicinity of the crystallization front and hence serving as a potential origin of dendrite growth. The authenticity of the calculation results has been verified in a number of tests aimed at analyzing the effect of heat and mass transport on crystallization front shape for cassette cooling rates that are typical of polycrystalline bismuth telluride growth processes. text/html en_US Modern Electronic Materials thermoelectric chalcogenides directional crystallization cassette method mathematical modeling melt heat exchange heat radiation convection Mathematical modeling of thermal processes during "cassette" crystallization of chalcogenides Research Article

10.3897/j.moem.6.2.58576 2020-06-30 moem

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia author Tkachenko, Olga A. Novosibirsk State University, Novosibirsk, Russia author Baksheev, Dmitry G. Novosibirsk State University, Novosibirsk, Russia Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia author Tkachenko, Vitaly A. 2020-06-30 2020-06-30 2020 Modern Electronic Materials 2452-1779 2452-2449 6 59 64 2020 10.3897/j.moem.6.2.58576 https://moem.pensoft.net/article/58576/ https://moem.pensoft.net/article/58576/download/pdf/ https://moem.pensoft.net/article/58576/download/xml/ Magnetotransport in two submicron-sized devices formed on the basis of GaAs/AlGaAs structures has been simulated using nonequilibrium Green functions. The effect of a perpendicular magnetic field on quantum transport in a quasi-one-dimensional quantum dot and in an Aharonov–Bohm interferometer has been analyzed in a single-particle approximation. Magnetic field oscillations of two-terminal conductance of the devices, equilibrium (persistent) current distributions and magnetic moment generated in the devices by persistent currents have been determined using numerical methods. Correlations between the magnetic moment, magnetic field oscillations of conductance and energy resonance in a specific magnetic field have been traced. Sufficiently regular conductance oscillations similar to Aharonov–Bohm ones have been revealed for a quasi-one-dimensional quantum dot at small magnetic fields (0.05–0.4 T). For a ring interferometer the contribution to the total equilibrium current and magnetic moment at a specific energy may change abruptly both in magnitude and in sign as a result of changing magnetic field within one Aharonov–Bohm oscillation. We show that the conductance of an interferometer is determined not by the number of modes propagating in the ring but rather by the effect of triangular quantum dots at the ring entrance that produce a strong reflection. The period of the calculated Aharonov–Bohm oscillations is in agreement with the measurement results for these devices. text/html en_US Modern Electronic Materials ballistic quantum dot ring electron interferometer conductance equilibrium current magnetic moment Aharonov–Bohm oscillations Aharonov–Bohm oscillations and equilibrium current distributions in open quantum dot and in ring interferometer Research Article

10.3897/j.moem.6.2.54295 2020-06-30 moem

National University of Science and Technology MISiS, Moscow, Russia author Zhukov, Roman N. National University of Science and Technology MISiS, Moscow, Russia author Kushnerev, K.S. National University of Science and Technology MISiS, Moscow, Russia author Kiselev, Dmitry A. https://orcid.org/0000-0003-1047-3007 National University of Science and Technology MISiS, Moscow, Russia author Ilina, Tatiana S. National University of Science and Technology MISiS, Moscow, Russia author Kubasov, Ilya V. https://orcid.org/0000-0002-6569-466X National University of Science and Technology MISiS, Moscow, Russia author Kislyuk, Aleksandr M. https://orcid.org/0000-0001-7185-8715 National University of Science and Technology MISiS, Moscow, Russia author Malinkovich, Mikhail D. National University of Science and Technology MISiS, Moscow, Russia author Parkhomenko, Yuri N. https://orcid.org/0000-0002-1970-9867 2020-06-30 2020-06-30 2020 Modern Electronic Materials 2452-1779 2452-2449 6 47 52 2020 10.3897/j.moem.6.2.54295 https://moem.pensoft.net/article/54295/ https://moem.pensoft.net/article/54295/download/pdf/ https://moem.pensoft.net/article/54295/download/xml/ Piezoelectric materials with useful properties find a wide range of applications including opto- and acousto- electronics. Lithium niobate in the form of a thin film is one of those promising materials and has a potential to improve ferroelectric random access memories devices, optical waveguides or acoustic delay lines by virtue of its physical characteristics, e.g. electro-optic coefficient, acoustic velocity, refractive indices etc. The key challenge to overcome is lithium nonstoichiometry as it leads to the appearance of parasite phases and thus aggravates physical and structural properties of a film. According to literature data, in order to obtain microcrystalline piezoelectric phase in previously amorphous films a set of methods is used. In our case we tried to synthesize LN films using congruent target and non-heated silicon substrate and then attain the piezoelectric phase by different annealing parameters. Afterwards LN films were compared to the ones synthesized on the silicon substrate with an additional buffer layer of platinum. Samples were studied by scanning probe microscope. Self-polarization vectors were defined. Based on domain structure images, the histograms of distribution of piezoresponse signals were built. text/html en_US Modern Electronic Materials Lithium niobate rf magnetron sputtering post-growth heat treatment scanning probe microscopy piezoelectric force microscopy histogram of distribution of vertical and lateral piezoresponse Enhancement of piezoelectric properties of lithium niobate thin films by different annealing parameters Research Article

10.3897/j.moem.6.2.58097 2020-06-30 moem

Scientific-Practical Materials Research Centre of the NAS of Belarus, Minsk, Belarus author Kalanda, Nikolay https://orcid.org/0000-0001-7679-4968 2020-06-30 2020-06-30 2020 Modern Electronic Materials 2452-1779 2452-2449 6 53 57 2020 10.3897/j.moem.6.2.58097 https://moem.pensoft.net/article/58097/ https://moem.pensoft.net/article/58097/download/pdf/ https://moem.pensoft.net/article/58097/download/xml/ The influence of thermocycling annealing processes on the oxygen ordering degree (order parameter) in YBa2Cu3O7-δ single crystals has been studied. It has been shown that an increase in the critical onset temperature of the transition to the superconducting state during thermocycling annealing procedures is consistent with the decrease of the σс/σаb parameter. This fact indicates a redistribution of the electronic density between the structurally inhomogeneous Cu(2)O2 and Cu(1)O1-δ planes, due to the formation of oxygen long-range order in the O(4)–Cu(1)–O(4) linear groups along the (b) crystal structure axis of the unit cell, and elimination of oxygen defects in the square nets of the Cu(2)O2 planes. The existence of the critical value of the conductivity anisotropy σс/σаb, below which its behavior does not correlate with the change of Тс, has been confirmed. In this case an increase in Тс and orthorhombic distortion of the crystal structure during isothermal annealing are caused by the amplification of the “interlayer” interaction between the Cu(2)О2 and Cu(1)О1-δ planes. As a result, the contribution of the Cu(1)О1-δ chain layers to the electron state density at the Fermi level increases. These layers can acquire superconducting properties due to tunneling of Cooper pairs from the Cu(2)О2 planes resulting in the formation of the induced superconductivity in these planes. text/html en_US Modern Electronic Materials high-temperature superconductivity YBa2Cu3O7-δ single crystals oxygen non-stoichiometry electrical conductivity order parameter Electrical conductivity of YBa2Cu3O7-δ single crystals under conditions of anionic ordering in Cu(1)O1-δ layers Research Article

10.3897/j.moem.6.2.63731 2020-07-15 moem

National University of Science and Technology MISiS, Moscow, Russia author Weintraub, Mark V. National University of Science and Technology MISiS, Moscow, Russia author Kozlova, Nina S. https://orcid.org/0000-0003-4057-9718 National University of Science and Technology MISiS, Moscow, Russia author Zabelina, Evgeniya V. https://orcid.org/0000-0002-5844-5673 National University of Science and Technology MISiS, Moscow, Russia author Petrzhik, Mikhail I. 2020-07-15 2020-07-15 2020 Modern Electronic Materials 2452-1779 2452-2449 6 65 70 2020 10.3897/j.moem.6.2.63731 https://moem.pensoft.net/article/63731/ https://moem.pensoft.net/article/63731/download/pdf/ https://moem.pensoft.net/article/63731/download/xml/ The effect of growth conditions, anisotropy and polarity of specimens on the mechanical properties of lanthanum-gallium tantalate La3Ta0.5Ga5.5O14 single crystals grown in different atmospheres (argon (Ar), argon with oxygen addition (Ar+(<2%)O2 and Ar+(2%)O2) and air) was studied. The test specimens for the measurements were cut perpendicularly to a 3rd order axis (Z cuts) and in polar directions perpendicular to a 2nd order axis (Y cuts). The polarity of the Y cut specimens was tested by piezoelectric response. The brittleness was evaluated by microindentation at 3, 5, 10 and 25 g loads. The brittleness proved to show itself at a 5 g and the higher loads regardless of growth atmosphere. Therefore microhardness tests were done at loads of within 3 g. The microhardness HV of the specimens was measured with an DM 8B Affri microhardness tester by Vickers methods. The hardness H, elastic modulus E and elastic recovery coefficient R were measured with a Berkovich pyramid on a CSM Nano-Hardness Tester using the instrumented indentation (nanoindentation) method. Growth atmosphere was shown to affect the mechanical properties of lanthanum-gallium tantalate crystals: crystals grown in an oxygen-free argon atmosphere had the lowest microhardness, hardness, elastic modulus and elastic recovery coefficient. The lowest microhardness was detected in Z cut specimens regardless of growth atmosphere. The mechanical properties of polar Y cuts proved to be anisotropic: the microhardness, hardness, elastic modulus and elastic recovery coefficient of these cuts were lower for positive cuts than for negative ones regardless of growth atmosphere. Y and Z cut langatate specimens grown in argon with less than two percent oxygen exhibited strong elastic modulus and elastic recovery coefficient anisotropy. text/html en_US Modern Electronic Materials langatate single crystal growth atmosphere mechanical properties microhardness test instrumental indentation microhardness hardness elastic modulus elastic recovery coefficient anisotropy Effect of growth conditions on the mechanical properties of lanthanum-gallium tantalate crystals Research Article

10.3897/j.moem.6.2.58860 2020-07-15 moem

National University of Science and Technology MISiS, Moscow, Russia author Sleptsova, Anastasia National University of Science and Technology MISiS, Moscow, Russia JSC “S&PE “Pulsar”, Moscow, Russia author Chernykh, Sergey National University of Science and Technology MISiS, Moscow, Russia author Podgorny, Dmitry A. JSC “S&PE “Pulsar”, Moscow, Russia author Zhilnikov, Ilya 2020-07-15 2020-07-15 2020 Modern Electronic Materials 2452-1779 2452-2449 6 71 75 2020 10.3897/j.moem.6.2.58860 https://moem.pensoft.net/article/58860/ https://moem.pensoft.net/article/58860/download/pdf/ https://moem.pensoft.net/article/58860/download/xml/ We have studied the effect of silicon nitride (SiN) dielectric passivating film deposition by inductively coupled plasma chemical vapor deposition (ICP CVD) on the parameters of AlGaN/GaN heterostructure high electron mobility transistors (HEMT). Study of the parameters of the dielectric layers has allowed us to determine the effect of RF and ICP power and working gas flow ratio on film growth rate and structural perfection, and on the current vs voltage curves of the passivated HEMT. The deposition rate changes but slightly with an increase in RF power but increases with an increase in ICP power. Transistor slope declines considerably with an increase in RF power: it is the greatest at minimum power RF = 1 W. In the beginning of growth even at a low RF power (3 W) the transistor structure becomes completely inoperable. Dielectric deposition for HEMT passivation should be started at minimum RF power. We have developed an AlGaN/GaN microwave HEMT passivation process providing for conformal films and low closed transistor drain–source currents without compromise in open state transistor performance: within 15 and 100 mA, respectively, for a 1.25 and 5 mm common T-gate (Ug = –8 V and Ud-s = 50 V). text/html en_US Modern Electronic Materials silicon nitride plasmachemical deposition ICP CVD AlGaN/GaN HEMT passivation current-voltage curves Optimization of passivation in AlGaN/GaN heterostructure microwave transistor fabrication by ICP CVD Research Article

10.3897/j.moem.6.3.63359 2020-09-30 moem

Saint Petersburg Electrotechnical University “LETI”, Saint Petersburg, Russia author Muratova, Ekaterina Saint Petersburg Electrotechnical University “LETI”, Saint Petersburg, Russia author Moshnikov, Vyacheslav A. State Scientific Institute Center for Physical Sciences and Technologies, Vilnius, Lithuania author Chernyakova, Katsiaryna V. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus author Vrublevsky, Igor A. 2020-09-30 2020-09-30 2020 Modern Electronic Materials 2452-1779 2452-2449 6 91 94 2020 Dinh H.T., Lushpa N.V., Chernyakova K.V., Vrublevsky I.A. Study of distribution of thermal fluxes in a plate of aluminum with nanoporous aluminum oxide by means of thermal imaging measurements. Doklady BGUIR, 2019; (1): 45–50. (In Russ.) Simin A., Holodnyak D., Vendik I. Multilayer integrated circuits of ultrahigh frequencies based on ceramics with a low firing temperature. Komponenty i tekhnologii = Components and technologies, 2005; (5): 190–196. (In Russ.) 10.1134/S1063784218110191 Muratova E.N., Vrublevsky I.A., Chernyakova E.V. et al. Materialy XIV Mezhdunarodnoi konferentsii «Fizika dielektrikov» (Dielektriki-2017) = Materials of the XIV International Conference “Physics of Dielectrics” (Dielectrics-2017). St. Petersburg: Izd-vo RGPU im. A. I. Gertsena, 2017: 136. (In Russ.) 10.1109/ISSE.2017.8000899 Chernyakova E., Vrublevsky I., Videkov V., Tuchkovsky A. Application of nanostructured anodic aluminum oxide in the manufacture of heat-loaded boards for power modules. Scientific Proceedings of STUME, 2016; XXV(12): 257–263. (In Russ.) Vrublevsky I., Chernyakova E. Videkov V., Tuchkovsky A. Comparative analysis of the operation of a flat heating element based on anodized aluminum. Scientific Proceedings of STUME, 2015; XXIII(9): 422–428. (In Russ.) Vrublevsky I., Chernyakova K., Videkov V., Tuchkovsky A. Improvement of the thermal characteristics of the electric heater in the architecture with aluminum, nanoporous alumina and resistive component of carbon fiber. Nanoscience & Nanotechnology, 2016; (1): 1–2. URL: https://libeldoc.bsuir.by/handle/123456789/10898 10.5772/18066 10.1016/j.matchemphys.2012.08.058 Muratova E.N. Artificially and naturally ordered micro- and nanosized capillary membranes based on anodic aluminum oxide: Dis. Cand. Sci. (Eng.). St. Petersburg: Saint Petersburg Electrotechnical University “LETI”, 2014: 118 (In Russ.). URL: https://etu.ru/assets/files/nauka/dissertacii/2014/Dissertaciya-Muratovoj-EN.pdf Eftekhari A. Nanostructured Materials in Electrochemistry. Weinheim (Germany): Wiley-VCH Verlag GmbH & Co. KGaA, 2008: 489. Aleksandrova O.A., Alekseev P.A., Kononova I.E., Maksimov A.I., Maraeva E.V., Moshnikov V.A., Muratova E.N., Nalimova S.S., Permyakov N.V., Spivak Yu.M., Titkov A.N. Diagnostika materialov metodami skaniruyushchei zondovoi mikroskopii [Diagnostics of materials by scanning probe microscopy]. Ed. by Prof. V. A. Moshnikov. St. Petersburg: Izd-vo SPbGETU «LETI», 2012: 172. (In Russ.) 10.1088/1742-6596/872/1/012020 Vrublevsky I.A., Dick S.K., Tereh A.S., Smirnov A.V., Chernyakova K.V. Structure of the porous aluminium oxide films formed in the solutions of organic acids. PFMT, 2012; (3): 101–105. (In Russ.) Patent 122385 (RF). Elektrokhimicheskaya yacheika dlya polucheniya poristykh anodnykh oksidov metallov i poluprovodnikov [An electrochemical cell for the production of porous anodic metal and semiconductor oxides]. P.G. Travkin, E.N. Sokolova, Yu.M. Spivak, V.A. Moshnikov, 2012. (In Russ.) Muratova E.N., Spivak Yu.M., Moshnikov V.A. Poristye struktury na osnove oksidov alyuminiya dlya solnechnoi energetiki i antiotrazhatel’nykh pokrytii [Porous structures based on aluminum oxides for solar energy and antireflection coatings]. In: Nanostructured oxide materials in modern micro-, nano- and optoelectronics. Ed. by V.A. Moshnikov, O.A. Alexandrova. St. Petersburg: Izd-vo SPbGETU «LETI», 2017: 32–62. (In Russ.) 10.1134/S1087659613030140 10.7567/JJAP.56.035202 10.1186/1556-276X-7-122 Aleksandrova O.A., Aleshin A.N., Belorus A.O., Bobkov A.A., Guz’ A.V., Kal’nin A.A., Kononova I.E., Levitsky V.S., Mazing D.S., Maraeva E.V., Matyushkin L.B., Moskvin P.P., Moshnikov V.A., Muratova E.N., Nalimova S.S., Ponomareva A.A., Pronin I.A., Spivak Yu.M. Novye nanomaterialy. Sintez. Diagnostika. Modelirovanie [New nanomaterials. Synthesis. Diagnostics. Modeling]. St. Petersburg: Izd-vo SPbGETU «LETI», 2015: 248. (In Russ.) Afanasyev A.V., Ilin V.A., Moshnikov V.A., Sokolova Ye.N., Spivak Yu.M. Synthesis of nano- and microporous structures by electrochemical methods. Biotechnosphere, 2011; (1–2): 39–45. (In Russ.) Vrublevsky I.A., Chernyakova K.V., Gorbachev D.V., Muratova E.N., Moshnikov V.A. Thermal and electrical characteristics of flat heaters made of aluminum with nanoporous anodic aluminum oxide and a resistive element made of carbon filament. Sb. materialov 28-i Mezhdunarodnoi Krymskoi konferentsii «SVCh-tekhnika i telekommunikatsionnye tekhnologii» = Proceedings of 28th International Crimean Conference “Microwave Engineering and Telecommunication Technologies”. Moscow: KNTTs im. Popova, 2018: 1013–1016. (In Russ.) 10.3897/j.moem.6.3.63359 https://moem.pensoft.net/article/63359/ https://moem.pensoft.net/article/63359/download/pdf/ https://moem.pensoft.net/article/63359/download/xml/ An important task faced in the industry of permanently installed heating systems addressed by a large number of manufacturers is power saving. Heating systems may have variegated designs, yet there are basic design requirements, i.e., high operational reliability, resource saving, environmental resistivity and stability of electric parameters. The key component of any heating unit is the heater. Flat resistive heaters have found wide application in heating units aimed at sustaining healthy indoor microclimate, maintaining preset process parameters on industrial premises, as well as in anti-icing systems, agriculture and general industry. We studied the thermal parameters of flat aluminum heating units containing carbon fiber ribbon heaters. To ensure the required insulation of the heater from the metallic base plate, the aluminum surface had a 20 mm thick porous aluminum oxide layer. The ends of the carbon fiber were metalized with a layer of copper for further soldering upon integration into the electric heating unit assembly. The electrical resistance of the heater with a carbon fiber was 60 Ohm. The propagation of heat flows inside a plate of aluminum with nanoporous aluminum oxide was studied using thermal imaging measurements. Temperatures on the surface of the aluminum heater cover and on the opposite heat emitting side were shown as a function of heating time. The experimental results suggest that the heat generated by the linear carbon fiber heater distributes rapidly in the entire bulk of the aluminum heater plate. This indicates a high heat conductivity of the heater aluminum base plate whose parameters provide for the required thermal parameters of the heating unit. text/html en_US Modern Electronic Materials heater aluminum porous anodic alumina carbon fiber thermal pattern thermal imaging study Investigation of the thermal parameters of an aluminum heater with nanoporous alumina Research Article

10.3897/j.moem.6.3.63308 2020-09-30 moem

Volgograd State University, Volgograd, Russia author Zaporotskova, Irina V. Volgograd State University, Volgograd, Russia author Radchenko, Daniel P. https://orcid.org/0000-0002-8569-1853 National University of Science and Technology “MISIS”, Moscow, Russia author Kozhitov, Lev V. https://orcid.org/0000-0002-4973-1328 Volgograd State University, Volgograd , Russia author Zaporotskov, Pavel A. FGUP «NII NPO «LUCH», Podolsk, Russia author Popkova, Alena V. 2020-09-30 2020-09-30 2020 Modern Electronic Materials 2452-1779 2452-2449 6 95 99 2020 10.3897/j.moem.6.3.63308 https://moem.pensoft.net/article/63308/ https://moem.pensoft.net/article/63308/download/pdf/ https://moem.pensoft.net/article/63308/download/xml/ An urgent problem of radio engineering and radioelectronics nowadays is the synthesis of composite materials with preset parameters that can be used as electronics engineering materials. Of special interest are MW range wide-band electromagnetic radiation absorbers. Special attention is paid to materials on the basis of ferromagnetic metals that are capable of effectively absorbing and reflecting incident waves and having a clear nanostructure. Development of nanocapsulated metals will allow controlling the parameters of newly designed materials. This is achieved with the use of polymer matrices, e.g. pyrolyzed polyacrylonitrile (PPAN). This work is a theoretical study of a PPAN monolayer model containing pairs of transition metal atoms iron, nickel and cobalt which possess ferromagnetic properties, in Fe-Co, Ni-Co and Fe-Ni combinations, with silicon amorphizing admixture. We studied the geometrical structure of the metal composite systems which are modeled as PPAN molecular clusters the centers of which are voided of six matrix material atoms, the resultant defects (the so-called pores) being filled with pairs of the metal atoms being studied. The metal containing monolayer proved to be distorted in comparison with the initially planar PPAN monolayer. We plotted single-electron spectra of the composite nanosystems and characterized their band gaps. The presence of metal atoms reduces the band gap of a metal composite as compared with pure PPAN. We determined the charges of the metals and found electron density transfer from metal atoms to their adjacent PPAN monolayer atoms. We calculated the average bond energy of the test metal composite systems and proved them to be stable. The studies involved the use of the density functional theory (DFT) method with the B3LYP functional and the 6-31G(d) basis. text/html en_US Modern Electronic Materials pyrolyzed polyacrylonitrile transition metals metal-carbon nanocomposites DFT. Theoretical study of metal composite based on pyrolyzed polyacrylonitrile monolayer containing Fe-Co, Ni-Co and Fe-Ni metal atom pairs and silicon amorphizing admixture Research Article

10.3897/j.moem.6.3.63734 2020-09-30 moem

Tajik Technical University named after academician M.S. Osimi, Dushanbe, Tajikistan author Ganiev, Izatullo N. Dangarinsk State University, Dangara, Tajikistan author Abulakov, Aslam P. Institute of Chemistry named after V. I. Nikitina, Academy of Sciences of the Republic of Tajikistan, Dushanbe , Tajikistan author Jayloev, Jamshed H. Institute of Chemistry named after V. I. Nikitina, Academy of Sciences of the Republic of Tajikistan, Dushanbe, Tajikistan author Yakubov, Umarali Sh. Institute of Chemistry named after V. I. Nikitina, Academy of Sciences of the Republic of Tajikistan, Dushanbe, Tajikistan author Safarov, Amirsho G. Institute of Chemistry named after V. I. Nikitina, Academy of Sciences of the Republic of Tajikistan, Dushanbe, Tajikistan author Abulkhaev, Vladimir Dz. 2020-09-30 2020-09-30 2020 Modern Electronic Materials 2452-1779 2452-2449 6 107 112 2020 10.3897/j.moem.6.3.63734 https://moem.pensoft.net/article/63734/ https://moem.pensoft.net/article/63734/download/pdf/ https://moem.pensoft.net/article/63734/download/xml/ The economic feasibility of using aluminum as a conductive material is explained by the favorable ratio of its cost to the cost of copper. In addition, one should take into account that the cost of aluminum has remained virtually unchanged for many years. When using conductive aluminum alloys for the manufacture of thin wire, winding wire, etc., certain difficulties may arise in connection with their insufficient strength and a small number of kinks before fracture. Aluminum alloys have been developed in recent years which even in a soft state have strength characteristics that allow them to be used as a conductive material. The electrochemical industry is one of the promising application fields of aluminum. E-AlMgSi (Aldrey) conductor aluminum alloys represent this group of alloys. This work presents data on the temperature dependence of heat capacity, heat conductivity and thermodynamic functions of the E-AlMgSi (Aldrey) aluminum alloy doped with bismuth. The studies have been carried out in "cooling" mode. It has been shown that the heat capacity and thermodynamic functions of the E-AlMgSi (Aldrey) aluminum alloy doped with bismuth increase with temperature and the Gibbs energy decreases. Bismuth additions of up to 1 wt.% reduce the heat capacity, heat conductivity, enthalpy and entropy of the initial alloy and increase the Gibbs energy. text/html en_US Modern Electronic Materials E-AlMgSi (Aldrey) aluminum alloy bismuth heat capacity heat conductivity "cooling" mode enthalpy entropy Gibbs energy. Effect of bismuth additions on the thermophysical and thermodynamical properties of E-AlMgSi (Aldrey) aluminum semiconductor alloy Research Article

10.3897/j.moem.6.3.63361 2020-09-30 moem

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia Novosibirsk State University, Novosibirsk, Russia author Tkachenko, Vitaly A. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia author Tkachenko, Olga A. Novosibirsk State University, Novosibirsk, Russia author Baksheev, Dmitry G. University of New South Wales, Sydney, Australia author Sushkov, Oleg P. 2020-09-30 2020-09-30 2020 Modern Electronic Materials 2452-1779 2452-2449 6 101 106 2020 10.3897/j.moem.6.3.63361 https://moem.pensoft.net/article/63361/ https://moem.pensoft.net/article/63361/download/pdf/ https://moem.pensoft.net/article/63361/download/xml/ A simple model has been suggested for describing self-organization of localized charges and quantum scattering in undoped GaAs/AlGaAs structures with 2D electron or hole gas created by applying respective gate bias. It has been assumed that these metal / dielectric / undoped semiconductor structures exhibit predominant carrier scattering at localized surface charges which can be located at any point of the plane imitating the GaAs / dielectric interface. The suggested model considers all these surface charges and respective image charges in metallic gate as a closed thermostated system. Electrostatic self-organization in this system has been studied numerically for thermodynamic equilibrium states using the Metropolis algorithm over a wide temperature range. We show that at T > 100 K a simple formula derived from the theory of single-component 2D plasma yields virtually the same behavior of structural factor at small wave numbers as the one given by the Metropolis algorithm. The scattering times of gate-induced carriers are described with formulas in which the structural factor characterizes frozen disorder in the system. The main contribution in these formulas is due to behavior of the structural factor at small wave numbers. Calculation using these formulas for the case of disorder corresponding to infinite T has yielded 2–3 times lower scattering times than experimentally obtained ones. We have found that the theory agrees with experiment at disorder freezing temperatures T ≈ 1000 K for 2D electron gas specimen and T ≈ 700 K for 2D hole gas specimen. These figures are the upper estimates of freezing temperature for test structures since the model ignores all the disorder factors except temperature. text/html en_US Modern Electronic Materials undoped structures gate-induced 2D systems surface charge disorder freezing temperature. Effect of surface charge self-organization on gate-induced 2D electron and hole systems Research Article

10.3897/j.moem.6.3.64492 2020-09-30 moem

Federal State Research and Development Institute of Rare Metal Industry (Giredmet JSC), Moscow, Russia author Yugova, Tatyana G. Federal State Research and Development Institute of Rare Metal Industry (Giredmet JSC), Moscow, Russia author Belov, Aleksandr G. Federal State Research and Development Institute of Rare Metal Industry (Giredmet JSC), Moscow, Russia author Kanevskii, Vladimir E. Federal State Research and Development Institute of Rare Metal Industry (Giredmet JSC), Moscow, Russia author Kladova, Evgeniya I. Federal State Research and Development Institute of Rare Metal Industry (Giredmet JSC), Moscow, Russia author Knyazev, Stanislav N. 2020-09-30 2020-09-30 2020 Modern Electronic Materials 2452-1779 2452-2449 6 85 89 2020 10.3897/j.moem.6.3.64492 https://moem.pensoft.net/article/64492/ https://moem.pensoft.net/article/64492/download/pdf/ https://moem.pensoft.net/article/64492/download/xml/ A theoretical model has been developed for determining free electron concentration in n-GaAs from characteristic points in the far infrared region of reflection spectra. We show that when determining free electron concentration one should take into account the pasmon–phonon coupling, otherwise free electron concentration will be overestimated. We have calculated electron concentration Nopt as a function of characteristic wave number ν+ which is described by a second order polynomial. Twenty-five tellurium doped gallium arsenide specimens have been tested for electron concentration using two methods, i.e., the conventional four-probe method (Van der Pau) and the optical method developed by us (the measurements have been carried out at room temperature). We have used the experimental results to plot the dependence of electron concentration based on the Hall data (NHall) on electron concentration based on the optical data (Nopt). This dependence is described by a linear function. We show that the data of optical and electrophysical measurements agree if the electron concentration is Neq = 1.07 · 1018 cm-3. At lower Hall electron concentrations, NHall < Nopt, whereas at higher ones, NHall > Nopt. We have suggested a qualitative model describing these results. We assume that tellurium atoms associate into complexes with arsenic vacancies thus reducing the concentration of electrons. The concentration of arsenic vacancies is lower on the crystal surface, hence the Nopt > NHall condition should be met. With an increase in doping level, more and more tellurium atoms remain electrically active, so the bulk concentration of electrons starts to prevail over the surface one. However with further increase in doping level the NHall/Nopt ratio starts to decrease again and tends to unity. This seems to originate from the fact that the decomposition intensity of the tellurium atom + arsenic vacancy complexes decreases with an increase in doping level. text/html en_US Modern Electronic Materials gallium arsenide electron concentration Hall effect reflection spectrum plasmon–phonon coupling. Comparison between optical and electrophysical data on free electron concentration in tellurium doped n-GaAs Research Article

10.3897/j.moem.6.3.54583 2020-09-30 moem

Russian State Vocational Pedagogical University, Ekaterinburg, Russia author Borukhovich, Arnold S. 2020-09-30 2020-09-30 2020 Modern Electronic Materials 2452-1779 2452-2449 6 113 123 2020 10.3897/j.moem.6.3.54583 https://moem.pensoft.net/article/54583/ https://moem.pensoft.net/article/54583/download/pdf/ https://moem.pensoft.net/article/54583/download/xml/ The results of the creation of a high-temperature spin injector based on EuO: Fe composite material are discussed. Their magnetic, electrical, structural and resonance parameters are given in a wide range of temperatures and an external magnetic field. A model calculation of the electronic spectrum of the solid solution Eu–Fe–O, responsible for the manifestation of the outstanding properties of the composite, is performed. The possibility of creating semiconductor spin electronics devices capable of operating at room temperature is shown. text/html en_US Modern Electronic Materials composite europium monoxide magnetic semiconductor magnetization spintronics spin-polarized current transport super paramagnetizm Europium monoxide as a basis for creating a high-temperature spin injector in the semiconductor spintronics Research Article

10.3897/j.moem.6.3.63224 2020-09-30 moem

Joint-Stock Company “Scientific and Production Association “Orion”, Moscow, Russia author Kulchitskiy, Nikolay A. Astrohn Technology Ltd., Lytkarino, Russia author Naumov, Arkady Joint-Stock Company “Scientific and Production Association “Orion”, Moscow, Russia author Startsev, Vadim V. 2020-09-30 2020-09-30 2020 Modern Electronic Materials 2452-1779 2452-2449 6 77 84 2020 10.3897/j.moem.6.3.63224 https://moem.pensoft.net/article/63224/ https://moem.pensoft.net/article/63224/download/pdf/ https://moem.pensoft.net/article/63224/download/xml/ Analysis of current GaAs and related device market initiated in a number of earlier works has been continued. Binary semiconductor GaAs compound is a conventional MW electronics material. Until recently GaAs based HF ICs for mobile phones were among the most rapidly growing segments of GaAs market. However the GaAs market development trend is changing. Photonics and Terahertz engineering are becoming the new world GaAs market drivers. This means that the current emphasize of GaAs single crystal technologies will shift toward vertical directional crystallization of “optoelectronic quality” crystals. In the medium and longer terms the world GaAs wafer and epitaxial structure markets will continue growing. In the shorter term we all will have to take into account COVID epidemic consequences. Still the GaAs market is closely related to Smartphone market novelties. Quite probably after a long growth period the GaAs market will keep on shrinking for the second consecutive year: GaAs production may decline by 11–12% in 2020. Assuming that the epidemic will be somehow taken under control in 2021 the overall Smartphone production can probably be expected to grow starting from 2021. Currently the Russian market of semiconductor compounds for photonics and electronic components (GaAs etc.) is but moderate and in predictable terms is not expected to achieve a level that is required for the emergence of a competitive domestic manufacturer, even though all importation replacement programs are accomplished. Meanwhile there is understanding that developing an advanced electronic components industry in Russia requires larger production of source materials. text/html en_US Modern Electronic Materials gallium arsenide Czochralski method vertical directional crystallization epitaxial GaAs wafers market prices demand consumption Photonic and Terahertz applications as the next gallium arsenide market driver Research Article

10.3897/j.moem.6.4.64991 2020-12-30 moem

Federal State Research and Develpment Institute of Rare Metal Industry (Giredmet JSC) , Moscow, Russia author Kormilitsina, Svetlana S. Federal State Research and Develpment Institute of Rare Metal Industry (Giredmet JSC), Moscow, Russia author Molodtsova, Elena V. Federal State Research and Develpment Institute of Rare Metal Industry (Giredmet JSC), Moscow, Russia author Knyzev, Stanislav N. Federal State Research and Develpment Institute of Rare Metal Industry (Giredmet JSC) , Moscow, Russia author Kozlov, Roman Yu. Federal State Research and Develpment Institute of Rare Metal Industry (Giredmet JSC), Moscow, Russia author Zavrazhin, Dmitry A. Federal State Research and Develpment Institute of Rare Metal Industry (Giredmet JSC) , Moscow, Russia author Zharikova, Elena V. MIREA – Russian Technological University, Moscow, Russia author Syrov, Yuri V. 2020-12-30 2020-12-30 2020 Modern Electronic Materials 2452-1779 2452-2449 6 147 153 2020 10.3897/j.moem.6.4.64991 https://moem.pensoft.net/article/64991/ https://moem.pensoft.net/article/64991/download/pdf/ https://moem.pensoft.net/article/64991/download/xml/ Thin (100) wafers of single crystal undoped InSb have been strength tested by plane transverse bending. The strength of the wafers (≤ 800 mm in thickness) has been shown to depend on their mechanical treatment type. If the full mechanical treatment cycle is used (grinding + chemical polishing) the strength of the InSb wafers increases twofold (from 3.0 to 6.4 kg/mm2). We show that the strength dependence on mechanical treatment type for (100) wafers is similar to that for (111) wafers, the strength of (111) wafers being 2 times higher. The roughness of the thin wafers after the full mechanical treatment cycle has been measured using contact profilometry. After the full mechanical treatment cycle the roughness of the InSb wafers Ra decreases from 0.6 to 0.04 mm leading to general surface smoothening. We have compared the strength and roughness between (100) InSb and GaAs wafers. The roughness of InSb and GaAs wafers after the full mechanical treatment cycle decreases significantly: by 10 times for InSb due to the general surface smoothening and by 3 times for GaAs (Rz from 2.4 to 0.8 mm) due to a reduction of the peak roughness component. The full mechanical treatment cycle increases the strength of InSb wafers by removing damaged layers through the sequence of operations and reducing the risk of mechanical damage development. text/html en_US Modern Electronic Materials indium antimonide Czochralsky method thin wafers yield strength mechanical treatment chemical polishing crystallographic orientation wafer roughness Effect of mechanical treatment type on the strength of undoped single crystal indium antimonide wafers Research Article

10.3897/j.moem.6.4.61435 2020-12-30 moem

Bangladesh University of Textiles, Dhaka, Bangladesh author Hasan, Redwanul https://orcid.org/0000-0002-1120-3028 Bangladesh University of Textiles, Dhaka, Bangladesh author Islam, Minhazul Bangladesh University of Textiles, Dhaka, Bangladesh author Hossain, Sazid 2020-12-30 2020-12-30 2020 Modern Electronic Materials 2452-1779 2452-2449 6 133 139 2020 10.3897/j.moem.6.4.61435 https://moem.pensoft.net/article/61435/ https://moem.pensoft.net/article/61435/download/pdf/ https://moem.pensoft.net/article/61435/download/xml/ This paper parades the effectiveness of conductive yarn resistor instead of carbon resistor by verifying the Kirchhoff’s voltage (KVL) & current (KCL) law. This research work enlightens about the sustainability of e-textiles on account of presenting characteristics of this conductive yarn resistor. Resistor is one of the most useful materials in the electrical laboratories. Generally resistor is made by carbon. Using carbon resistor is pernicious for our environment, society & cost. It is known that sustainability is the concerned area at present. Sustainable e-textile is one of the major need in material science .This quest indicates that point to boggle sustainable e-textile by inventing conductive yarn resistor verifying with most orthodox theory of Kirchhoff’s voltage & current laws. KVL and KCL are the most prominent theory in electrical science. Summation of KVL and KCL will be zero in any closed loop in this theory. The summation of KVL is also zero here and summation of KCL is also zero here. It can justify Kirchoff’s KVL & KCL theory. text/html en_US Modern Electronic Materials conductive sustainability nanoparticles resistor e-textile. KVL and KCL verification by cotton conductive yarn resistor instead of carbon resistor fixation with Ag nanoparticles for sustainable e-textiles application Research Article

10.3897/j.moem.6.4.65576 2020-12-30 moem

Tver State University, Tver, Russia author Malyshkina, Olga V. https://orcid.org/0000-0001-5885-2511 Tver State University, Tver, Russia author Shishkov, Gregory S. Multidisciplinary gymnasium 12, Tver, Russia author Martyanov, Andrey A. Tver State University, Tver, Russia author Ivanova, Alexandra I. 2020-12-30 2020-12-30 2020 Modern Electronic Materials 2452-1779 2452-2449 6 141 146 2020 10.3897/j.moem.6.4.65576 https://moem.pensoft.net/article/65576/ https://moem.pensoft.net/article/65576/download/pdf/ https://moem.pensoft.net/article/65576/download/xml/ The structure and dielectric properties of barium titanate ceramics samples sintered at 1100, 1150, 1200, 1250 and 1350 °C have been compared with the dielectric properties of 80 vol.% barium titanate + 20 vol.% barium ferrite composite samples sintered at 1150, 1200 and 1250 °C. It has been shown that polarization sufficient for existence of the piezoelectric effect is only achieved in barium titanate samples sintered at 1250 and 1350 °C. Furthermore the pyroelectric coefficient and reversal polarization of these samples are far higher than those of samples sintered at lower temperatures. Analysis of the sample structures has confirmed that the dielectric properties of barium titanate ceramics depend on grain size and therefore on sintering temperature. Based on the experimental results we have selected the optimum sintering temperature for 80 vol.% barium titanate + 20 vol.% barium ferrite composite to be 1250 °С. Further increase in sintering temperature to 1300 °C showed that this composite has a eutectic. The temperature dependence of the permittivity of the barium titanate / barium ferrite composite sintered at 1250 °С is similar to that of BaTiO3 ceramics samples sintered at 1350 °С. The room temperature permittivity of the composite samples also proves to be far higher than that of barium titanate ceramics samples sintered at the same temperatures. Barium ferrite addition to barium titanate increases the permittivity of the composite and also diffuses the ferroelectric phase transition and shifts the permittivity maximum temperature by 10 °C towards higher temperatures. text/html en_US Modern Electronic Materials piezoelectric ceramics barium titanate magnetoelectric composite permittivity Curie temperature spontaneous polarization pyroelectric effect piezoelectric coefficient Effect of sintering temperature on dielectric properties of barium titanate ceramics and composite Research Article

10.3897/j.moem.6.4.65351 2020-12-30 moem

National University of Science and Technology MISiS, Moscow, Russia Admiral Ushakov State Maritime University, Novorossisk, Russia author Timokhin, Viktor M. Scientific and Technological Center of Unique Instrumentation of the Russian Academy of Sciences, Moscow, Russia author Garmash, Vladimir M. National University of Science and Technology MISiS, Moscow, Russia author Tedzhetov, Valentin A. 2020-12-30 2020-12-30 2020 Modern Electronic Materials 2452-1779 2452-2449 6 125 132 2020 10.3897/j.moem.6.4.65351 https://moem.pensoft.net/article/65351/ https://moem.pensoft.net/article/65351/download/pdf/ https://moem.pensoft.net/article/65351/download/xml/ For implementing the technology of thermally stimulated diagnostics of anisotropy and optical axes in crystals, the sample is thermostated at a temperature not exceeding the melting point, an electric field not exceeding the breakdown field is applied to the sample and polarization is produced for a time greater than the relaxation time at this temperature. After that, without switching off the electric field, the sample is cooled to the liquid nitrogen temperature, following which the field is switched off, the sample is linearly heated to a temperature above the polarization temperature and the resultant thermally stimulated depolarization (TSD) spectra taken along and perpendicular to the optical axis of the crystal are examined. When comparing the spectra the presence of anisotropy is detected and the direction of the optical axes is determined from the magnitude and presence of the TSD maxima. text/html en_US Modern Electronic Materials diagnostics crystalline materials anisotropy optical axis thermally stimulated currents Technology of thermally stimulated diagnostics of anisotropy and optical axes in crystals Research Article

10.3897/j.moem.6.4.65567 2020-12-30 moem

Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Russia author Leonov, Aleksey V. https://orcid.org/0000-0002-3437-9501 National University of Science and Technology “MISiS”, Moscow, Russia author Murashev, Victor N. National University of Science and Technology “MISiS”, Moscow, Russia author Ivanov, Dmitry N. https://orcid.org/0000-0002-5218-1654 National University of Science and Technology “MISiS”, Moscow, Russia author Kirilov, V.D. 2020-12-30 2020-12-30 2020 Modern Electronic Materials 2452-1779 2452-2449 6 155 158 2020 10.3897/j.moem.6.4.65567 https://moem.pensoft.net/article/65567/ https://moem.pensoft.net/article/65567/download/pdf/ https://moem.pensoft.net/article/65567/download/xml/ The influence of the coupling effect on the parameters of field Hall elements based on thin-film MOS transistors has been studied. Analysis of the development of today’s microelectronics shows the necessity of developing the element base for high performance sensors based on silicon technologies. One way to significantly improve the performance of sensing elements including magnetic field sensors is the use of thin-film transistors on the basis of silicon on insulator (SOI) structures. It has been shown that field Hall sensors (FHS) may become the basis of high-performance magnetic field sensors employing the coupling effect occurring in the double gate vertical topology of these sensing elements. Electrophysical studies of FHS have been conducted for different gate bias and power supply modes. The results show that the coupling effect between the gates occurs in FHS if the thickness of the working layer between the gates is 200 nm. This effect leads to an increase in the effective carrier mobility and hence an increase in the magnetic sensitivity of the material. Thus field Hall elements based on thin-film transistors fabricated using silicon technologies provide for a substantial increase in the magnetic sensitivity of the elements and allow their application in highly reliable magnetic field sensors. text/html en_US Modern Electronic Materials transistor silicon on insulator field Hall sensor charge coupling magnetic field Coupling effect in field Hall elements based on thin-film SOI MOS transistors Research Article

10.3897/j.moem.7.1.66773 2021-03-30 moem

Institute of Microelectronics Technology and High-Purity Materials of the Russian Academy of Sciences, Chernogolovka, Moscow Region, Russia JSC Fomos-Materials, Moscow, Russia author Mololkin, Anatolii A. Institute of Microelectronics Technology and High-Purity Materials of the Russian Academy of Sciences, Chernogolovka, Moscow Region, Russia author Roshchupkin, Dmitry V. Institute of Microelectronics Technology and High-Purity Materials of the Russian Academy of Sciences, Chernogolovka, Moscow Region, Russia author Emelin, Eugenii V. Institute of Microelectronics Technology and High-Purity Materials of the Russian Academy of Sciences, Chernogolovka, Moscow Region, Russia author Fahrtdinov, Rashid R. 2021-03-30 2021-03-30 2021 Modern Electronic Materials 2452-1779 2452-2449 7 1 17 20 2021 10.3897/j.moem.7.1.66773 https://moem.pensoft.net/article/66773/ https://moem.pensoft.net/article/66773/download/pdf/ https://moem.pensoft.net/article/66773/download/xml/ Lithium niobate and tantalate are among the most important and widely used materials of acoustooptics and acoustoelectronics. They have high piezoelectric constants enabling their use as actuators. Their use is however restricted by the thermal instability of lithium niobate crystals and the low Curie temperature TC of lithium tantalate crystals. Overcoming these drawbacks typical of some compounds is possible by growing LiNb1-xTaxO3 single crystals. Good quality LiNb1-xTaxO3 single crystals have been grown using the Czochralsky technique. High-temperature poling process of LiNb1-xTaxO3 single crystals has been studied. The main differences between the process modes required for poling of congruent LiNb1-xTaxO3 single crystals and congruent LiNbO3 single crystals have been demonstrated. Parameters of high-temperature electric diffusion processing of LiNb1-xTaxO3 single crystals that provide for singledomain crystals for further study of physical properties have been reported. text/html en_US Modern Electronic Materials lithium niobate lithium tantalate ferroelectric crystals high-temperature single domain poling process crystal growth actuators High-temperature poling treatment of congruent ferroelectric LiNb0.5Ta0.5O3 solid solution single crystals Research Article

10.3897/j.moem.7.1.73285 2021-03-30 moem

Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow, Russia author Fedorov, Pavel P. 2021-03-30 2021-03-30 2021 Modern Electronic Materials 2452-1779 2452-2449 7 1 31 32 2021 10.3897/j.moem.7.1.73285 https://moem.pensoft.net/article/73285/ https://moem.pensoft.net/article/73285/download/pdf/ https://moem.pensoft.net/article/73285/download/xml/ Review on the paper Wuzong Zhou, Reversed Crystal Growth. Crystals. 2019; 9(1): 7 (16 pp). https://doi.org/10.3390/cryst9010007 text/html en_US Modern Electronic Materials crystal growth crystal morphology electron microscopy hollow crystal Review on the paper Reversed Crystal Growth Review Article

10.3897/j.moem.7.1.65581 2021-03-30 moem

V. I. Nikitin Institute of Chemistry, Academy of Sciences of the Republic of Tajikistan, Dushanbe, Tajikistan author Ganiev, Izatullo N. Dangarinsk State University, Dangara, Tajikistan author Aliev, Firdavs A. Tajik Technical University named after academician M.S. Osimi, Dushanbe, Tajikistan author Odinazoda, Haydar O. V. I. Nikitin Institute of Chemistry, Academy of Sciences of the Republic of Tajikistan, Dushanbe, Tajikistan author Safarov, Ahror M. V. I. Nikitin Institute of Chemistry, Academy of Sciences of the Republic of Tajikistan, Dushanbe, Tajikistan author Usmonov, Rakhmazhon 2021-03-30 2021-03-30 2021 Modern Electronic Materials 2452-1779 2452-2449 7 1 21 30 2021 10.3897/j.moem.7.1.65581 https://moem.pensoft.net/article/65581/ https://moem.pensoft.net/article/65581/download/pdf/ https://moem.pensoft.net/article/65581/download/xml/ The effect of impurities on the electrical conductivity of aluminum has been studied in detail. The electrical conductivity of aluminum is 65.45% of that of copper. The tensile strength of aluminum wire is 150–170 MPa which, at equal conductivity, is about 65% of the strength of copper wire. This strength of aluminum wire is sufficient for bearing the wire’s own weight but may be too low in case of snow, ice or wind overloads. One way to improve the strength of aluminum wire is to use aluminum alloys having higher strength combined with sufficiently high electrical conductivity, e.g. the E-AlMgSi alloy (Aldrey). The key strengthening agent of the E-AlMgSi alloy (Aldrey) is the Mg2Si phase which imparts high mechanical strength to aluminum. In this work we present experimental data on the kinetics of high-temperature oxidation and electrochemical corrosion of indium doped E-AlMgSi aluminum conductor alloy (Aldrey). Thermal gravimetric study has shown that indium doping and high temperature exposure increase the oxidation rate of E-AlMgSi alloy (Aldrey), with the apparent alloy oxidation activation energy decreasing from 120.5 to 91.8 kJ/mole. Alloy oxidation rate data determined using a potentiostatic technique in NaCl electrolyte media have shown that the corrosion resistance of the indium doped alloy is 20–30% superior to that of the initial alloy. With an increase in NaCl electrolyte concentration the electrochemical potentials of the alloys decrease whereas the corrosion rate increases regardless of alloy composition. text/html en_US Modern Electronic Materials E-AlMgSi aluminum alloy (Aldrey) thermal gravimetric method potentiostatic technique oxidation rate apparent activation energy NaCl electrolyte corrosion and pitting potentials corrosion rate Corrosion of indium doped E-AlMgSi aluminum conductor alloy (Aldrey) Research Article

10.3897/j.moem.7.1.73283 2021-03-30 moem

National University of Science and Technology MISiS, Moscow, Russia author Terekhova, Yuliia National University of Science and Technology MISiS, Moscow, Russia author Kiselev, Dmitry A. https://orcid.org/0000-0003-1047-3007 Tver State University, Tver, Russia author Alexander V., Solnyshkin https://orcid.org/0000-0002-4044-8761 2021-03-30 2021-03-30 2021 Modern Electronic Materials 2452-1779 2452-2449 7 1 11 16 2021 10.3897/j.moem.7.1.73283 https://moem.pensoft.net/article/73283/ https://moem.pensoft.net/article/73283/download/pdf/ https://moem.pensoft.net/article/73283/download/xml/ Ceramic and polymer based nanocomponents combine the properties of their constituents, e.g. flexibility, elasticity, polymer reprocessability, hardness typical of glass, wear resistance and high light refraction index. This helps improving many properties of the materials in comparison with the source components. Since recently researchers have been manifesting interest to the properties of complex composite compounds. This is primarily caused by the unique properties of their structures as compared with conventional materials having homogeneous composition. Secondly, this interest is caused by the fact that these compounds may prove to be much cheaper than homogeneous structures provided the physical properties of the composite in a preset range of parameters (temperature, applied field frequency etc.) are identical to those of the respective homogeneous materials. For example, polyvinyl idenfluoride (PVDF) type ferroelectric polymers and copolymers on its basis have found wide application for functional elements of various electromechanic devices in advanced electronics due to their relatively good piezoelectric and pyroelectric properties. The strong random polarization and the formation of polar non-centrosymmetric crystals provide for the high piezoelectric and pyroelectric activity in these crystals. Scanning probe microscopy has been used for study of ferroelectric nanocomposites having different compositions. The matrix specimen for study of local polarization switching at a nanoscale level was vinyl idenfluoride and trifluoroethylene P(VDF-TrFE) copolymer possessing sufficiently high crystallinity. The composite fillers were barium titanate BaTiO3 and deuterized triglycinsulfate DTGS ferroelectric powders and zirconate-titanate lead barium BPZT ceramic powder. We show these materials to show good promise for use in memory cells. text/html en_US Modern Electronic Materials nanocomposites ferroelectric polymer piezoelectric properties scanning probe microscopy Scanning probe microscopic study of P(VDF-TrFE) based ferroelectric nanocomposites Research Article

10.3897/j.moem.7.1.64953 2021-03-30 moem

Wachendorff-Chemie GmbH, Troisdorf-Spich, Germany author Jarkin, Vladimir N. Engineering Educational and Scientific Institute of Zaporozhye National University, Zaporozhye, Ukraine author Kisarin, Oleg A. Engineering Educational and Scientific Institute of Zaporozhye National University, Zaporozhye, Ukraine author Kritskaya, Tatyana V. 2021-03-30 2021-03-30 2021 Modern Electronic Materials 2452-1779 2452-2449 7 1 1 10 2021 10.3897/j.moem.7.1.64953 https://moem.pensoft.net/article/64953/ https://moem.pensoft.net/article/64953/download/pdf/ https://moem.pensoft.net/article/64953/download/xml/ Novel technical solutions and ideas for increasing the yield of solar and semiconductor grade polycrystalline silicon processes have been analyzed. The predominant polycrystalline silicon technology is currently still the Siemens process including the conversion of technical grade silicon (synthesized by carbon-thermal reduction of quartzites) to trichlorosilane followed by rectification and hydrogen reduction. The cost of product silicon can be cut down by reducing the trichlorosilane synthesis costs through process and equipment improvement. Advantages, drawbacks and production cost reduction methods have been considered with respect to four common trichlorosilane synthesis processes: hydrogen chloride exposure of technical grade silicon (direct chlorination, DC), homogeneous hydration of tetrachlorosilane (conversion), tetrachlorosilane and hydrogen exposure of silicon (hydro chlorination silicon, HC), and catalyzed tetrachlorosilane and dichlorosilane reaction (redistribution of anti-disproportioning reaction). These processes remain in use and are permanently improved. Catalytic processes play an important role on silicon surface, and understanding their mechanisms can help find novel applications and obtain new results. It has been noted that indispensable components of various equipment and process designs are recycling steps and combined processes including active distillation. They provide for the most complete utilization of raw trichlorosilane, increase the process yield and cut down silicon cost. text/html en_US Modern Electronic Materials trichlorosilane synthesis polycrystalline silicon Methods of trichlorosilane synthesis for polycrystalline silicon production. Part 1: Direct synthesis Review Article

10.3897/j.moem.7.2.73293 2021-06-30 moem

JSC “S&PE “Pulsar”, Moscow, Russia author Еnisherlova, Kira L. JSC “S&PE “Pulsar”, Moscow, Russia author Seidman, Lev A. JSC “S&PE “Pulsar”, Moscow, Russia author Temper, Ella M. JSC “S&PE “Pulsar”, Moscow, Russia author Kontsevoi, Yulii A. 2021-06-30 2021-06-30 2021 Modern Electronic Materials 2452-1779 2452-2449 7 63 71 2021 10.3897/j.moem.7.2.73293 https://moem.pensoft.net/article/73293/ https://moem.pensoft.net/article/73293/download/pdf/ https://moem.pensoft.net/article/73293/download/xml/ The effect of parameters of plasma enhanced chemical vapor deposition (PECVD) processes for SiNx film fabrication on the electrical parameters of dielectric/АlGaN/GaN structures has been studied. The effect of growing film composition, additional heterostructure surface treatment with nitrogen plasma before dielectric deposition and HF biasing during treatment on the parameters of the С–V and I–V curves of SiNx/АlGaN/GaN structures has been analyzed. We show that films with nitrogen to silicon concentration ratios of 60 and 40% and a high oxygen content exhibit a decrease in the positive fixed charge in the structures although the I–V curves of the structures exhibit current oscillations. Information has been reported on the effect of PECVD process mode on current oscillation parameters, e.g. period and amplitude, and length of I–V curve section in which oscillations occur. Possible explanation of these oscillations has been suggested. Additional nitrogen plasma treatment of heterostructure surface before monosilane supply to the chamber changes the magnitude and sign of fixed charge and reduces the free carrier concentration in the 2D gas channel of SiNx/АlGaN/GaN heterostructures. Experimental evidence has been provided for the effect of PECVD process parameters and surface preparation on the electrical parameters of the heterostructures grown. text/html en_US Modern Electronic Materials heterostructure passivating coating PECVD deposition technique С–V curve HEMT I–V curve piezoelectric charge 2DEG Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures Research Article

10.3897/j.moem.7.2.75519 2021-06-30 moem

National Research University of Electronic Technology, Moscow, Russia author Shalaev, Pavel V. National Research University of Electronic Technology, Moscow, Russia author Monakhova, Polina A. National Research University of Electronic Technology, Moscow, Russia author Tereshchenko, Sergey A. 2021-06-30 2021-06-30 2021 Modern Electronic Materials 2452-1779 2452-2449 7 53 61 2021 10.3897/j.moem.7.2.75519 https://moem.pensoft.net/article/75519/ https://moem.pensoft.net/article/75519/download/pdf/ https://moem.pensoft.net/article/75519/download/xml/ Five samples of liquid dispersions of colloidal gold nanorods having various aspect ratios have been studied using light scattering methods. Transmission electron microscopy has been employed as a reference method. Advantages and drawbacks of dynamic light scattering and nanoparticle tracking analysis methods for study of nanoparticle geometrical parameters and concentration, sample monodispersity degree and detection of large particle aggregations and quasispherical impurities have been demonstrated. We show that depolarized dynamic light scattering method can be used for analysis of geometrical parameters of colloidal gold nanorods in liquid dispersions. The measurement results depend largely on the presence of large impurity particles or particle aggregations in samples. In turn the presence of large particles in dispersions can be detected using dynamic light scattering methods or nanoparticle tracking analysis. Dynamic light scattering method is more sensitive to the presence of even small quantities of large impurities or aggregations in samples. The monodispersity degree of nanorod liquid dispersions can also be assessed using dynamic light scattering and nanoparticle tracking analysis methods, and the measurement results can be considered more statistically significant in comparison with electron microscopy because a larger number of particles are analyzed. An increase in the concentration of spherical particles in compound dispersions of colloidal gold nanospheres and nanorods leads to a decrease in the contribution of the rotational mode to the overall scattering intensity. Data on the concentration of quasispherical impurities in samples of colloidal gold nanorod liquid dispersions have been reported on the basis of scattered light depolarization degree measurements. text/html en_US Modern Electronic Materials non-spherical nanoparticles nanorods colloidal gold dynamic light scattering nanoparticle tracking analysis light depolarization Study of colloidal gold nanorods in liquid dispersions using light scattering methods Research Article

10.3897/j.moem.7.2.73289 2021-06-30 moem

Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow, Russia author Aleshin, Andrey N. Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow, Russia author Зенченко, Николай Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow, Russia author Ruban, Oleg A. 2021-06-30 2021-06-30 2021 Modern Electronic Materials 2452-1779 2452-2449 7 45 51 2021 10.3897/j.moem.7.2.73289 https://moem.pensoft.net/article/73289/ https://moem.pensoft.net/article/73289/download/pdf/ https://moem.pensoft.net/article/73289/download/xml/ The operation of the TiN/HfO2/Pt bipolar memristor has been simulated by the finite elements method using the Maxwell steady state equations as a mathematical basis. The simulation provided knowledge of the effect of conductive filament thickness on the shape of the I–V curve. The conductive filament has been considered as the highly conductive Hf ion enriched HfOx phase (x < 2) whose structure is similar to a Magneli phase. In this work a mechanism has been developed describing the formation, growth and dissolution of the HfOx phase in bipolar mode of memristor operation which provides for oxygen vacancy flux control. The conductive filament has a cylindrical shape with the radius varying within 5–10 nm. An increase in the thickness of the conductive filament leads to an increase in the area of the hysteresis loop of the I–V curve due to an increase in the energy output during memristor operation. A model has been developed which allows quantitative calculations and hence can be used for the design of bipolar memristors and assessment of memristor heat loss during operation. text/html en_US Modern Electronic Materials Maxwell equations finite elements method bipolar mode conductive phase heat loss Simulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness Research Article

10.3897/j.moem.7.2.76286 2021-06-30 moem

Federal State Research and Develpment Institute of Rare Metal Industry ("Giredmet" JSC), Moscow, Russia author Kozlov, Roman Yu. Federal State Research and Develpment Institute of Rare Metal Industry ("Giredmet" JSC), Moscow, Russia author Kormilitsina, Svetlana S. Federal State Research and Develpment Institute of Rare Metal Industry ("Giredmet" JSC), Moscow, Russia author Molodtsova, Elena V. Federal State Research and Develpment Institute of Rare Metal Industry ("Giredmet" JSC), Moscow, Russia author Zhuravlev, Eugene O. 2021-06-30 2021-06-30 2021 Modern Electronic Materials 2452-1779 2452-2449 7 73 78 2021 10.3897/j.moem.7.2.76286 https://moem.pensoft.net/article/76286/ https://moem.pensoft.net/article/76286/download/pdf/ https://moem.pensoft.net/article/76286/download/xml/ Currently there is a worldwide trend to increase the diameter of crystals grown from elemental semiconductors and semiconductor compounds. According to literary data the diameter of 3–5 semiconductor single crystals grown nowadays is 4 to 6 inches. So far up to 75 mm indium antimonide single crystals have been grown in Russia. Indium antimonide is the element base for the widest field of solid state electronics, i.e., optoelectronics. Indium antimonide is used for the fabrication of 3–5 mm range linear photodetectors and photodetector arrays used as light-sensitive material in heat vision systems. Growth heat conditions have been selected and 100 mm [100] indium antimonide single crystals have been grown using the modified two-stage Czochralski technique. The graphite heating unit has been oversized to accommodate a 150 mm crucible and a 4.5–5 kg load. The results of the work have provided for a substantial increase in the yield of photodetectors. The electrophysical properties of the as-grown single crystals have been studied using the Van der Pau method and proved to be in agreement with the standard parameters of undoped indium antimonide. Using the 9-field etch method of pit counting under an optical microscope the dislocation density in the 100 mm single crystals has been measured to be ≤ 100 cm-2which is similar to that for 50 mm single crystals. text/html en_US Modern Electronic Materials Czochralski technique indium antimonide 100 mm diameter single crystal technology heating unit EPD homogeneity Growth of 100 mm indium antimonide single crystals by modified Czochralski technique Research Article

10.3897/j.moem.7.2.65572 2021-06-30 moem

Wachendorff Chemie GmbH, Troisdorf-Spich, Germany author Jarkin, Vladimir N. Engineering Educational and Scientific Institute of Zaporozhye National University, Zaporozhye, Ukraine author Kisarin, Oleg A. Engineering Educational and Scientific Institute of Zaporozhye National University, Zaporozhye, Ukraine author Kritskaya, Tatyana V. 2021-06-30 2021-06-30 2021 Modern Electronic Materials 2452-1779 2452-2449 7 33 43 2021 10.3897/j.moem.7.2.65572 https://moem.pensoft.net/article/65572/ https://moem.pensoft.net/article/65572/download/pdf/ https://moem.pensoft.net/article/65572/download/xml/ Novel technical solutions and ideas for increasing the yield of solar and semiconductor grade polycrystalline silicon processes have been analyzed. The predominant polycrystalline silicon technology is currently still the Siemens process including the conversion of technical grade silicon (synthesized by carbon-thermal reduction of quartzites) to trichlorosilane followed by rectification and hydrogen reduction. The cost of product silicon can be cut down by reducing the trichlorosilane synthesis costs through process and equipment improvement. Advantages, drawbacks and production cost reduction methods have been considered with respect to four common trichlorosilane synthesis processes: hydrogen chloride exposure of technical grade silicon (direct chlorination, DC), homogeneous hydration of tetrachlorosilane (conversion), tetrachlorosilane and hydrogen exposure of silicon (hydro chlorination silicon, HC), and catalyzed tetrachlorosilane and dichlorosilane reaction (redistribution of anti-disproportioning reaction). These processes remain in use and are permanently improved. Catalytic processes play an important role on silicon surface, and understanding their mechanisms can help find novel applications and obtain new results. It has been noted that indispensable components of various equipment and process designs are recycling steps and combined processes including active distillation. They provide for the most complete utilization of raw trichlorosilane, increase the process yield and cut down silicon cost. text/html en_US Modern Electronic Materials trichlorosilane synthesis polycrystalline silicon Methods of trichlorosilane synthesis for polycrystalline silicon production. Part 2: Hydrochlorination and redistribution Review Article

10.3897/j.moem.7.3.76700 2021-09-30 moem

Federal State Research and Develpment Institute of Rare Metal Industry ("Giredmet"), Moscow, Russia author Yugova, Tatyana G. Federal State Research and Develpment Institute of Rare Metal Industry ("Giredmet"), Moscow, Russia author Belov, Aleksandr G. Federal State Research and Develpment Institute of Rare Metal Industry ("Giredmet"), Moscow, Russia author Kanevskii, Vladimir E. Federal State Research and Develpment Institute of Rare Metal Industry ("Giredmet"), Moscow, Russia author Kladova, Evgeniya I. Federal State Research and Develpment Institute of Rare Metal Industry ("Giredmet"), Moscow, Russia author Knyazev, Stanislav N. Federal State Research and Develpment Institute of Rare Metal Industry ("Giredmet"), Moscow, Russia author Parfent'eva, Irina B. 2021-09-30 2021-09-30 2021 Modern Electronic Materials 2452-1779 2452-2449 7 79 84 2021 10.3897/j.moem.7.3.76700 https://moem.pensoft.net/article/76700/ https://moem.pensoft.net/article/76700/download/pdf/ https://moem.pensoft.net/article/76700/download/xml/ A theoretical model has been developed for determining the free electron concentration in n-InAs specimens from characteristic points in far IR reflection spectra. We show that this determination requires plasmon-phonon coupling be taken into account, otherwise the measured electron concentration proves to be overestimated. A correlation between the electron concentration Nopt and the characteristic wavenumber ν+ has been calculated and proves to be well fit by a third order polynomial. The test specimens have been obtained by tin or sulfur doping of indium arsenide. The electron concentration in the specimens has been measured at room temperature using two methods: the optical method developed by the Authors (Nopt) and the conventional four-probe Hall method (the Van der Pau method, NHall). The reflecting surfaces of the specimens have been chemically polished or fine abrasive ground. The condition Nopt > NHall has been shown to hold for all the test specimens. The difference between the optical and the Hall electron concentrations is greater for specimens having polished reflecting surfaces. The experimental data have been compared with earlier data for n-GaAs. A qualitative model explaining the experimental data has been suggested. text/html en_US Modern Electronic Materials indium arsenide electron concentration Hall effect reflection spectrum plasmon-phonon coupling Comparison between results of optical and electrical measurements of free electron concentration in n-InAs specimens Research Article

10.3897/j.moem.7.3.76277 2021-09-30 moem

Institute for Nuclear problems of Belarusian State University, Minsk, Belarus author Fedotova, Julia A. https://orcid.org/0000-0002-4471-0552 2021-09-30 2021-09-30 2021 Modern Electronic Materials 2452-1779 2452-2449 7 91 97 2021 10.3897/j.moem.7.3.76277 https://moem.pensoft.net/article/76277/ https://moem.pensoft.net/article/76277/download/pdf/ https://moem.pensoft.net/article/76277/download/xml/ Granular films containing Fe50Co50Zr10 alloy nanoparticles inside Pb0,81Sr0,04(Na0,5Bi0,5)0,15(Zr0,575Ti0,425)O3 (PZT) ferroelectric matrix possess a combination of functional magnetic and electrical properties which can be efficiently controlled by means of external electric or magnetic fields. The formation of the required granular structure in PZT matrix is only possible if synthesis is carried out in an oxygen-containing atmosphere leading to substantial oxidation of metallic nanoparticles. Thus an important task is to study the oxidation degree of metallic nanoparticles depending on synthesis conditions and the effect of forming phases on the electrical properties of the films. The relationship between the structural and phase state and electrical properties of granular FeCoZr)x (PZT)100-x films (30 ≤ x ≤ 85 at.%) synthesized in an oxygen-containing atmosphere at the oxygen pressure PO in a range of (2.4–5.0) · 10–3 Pa has been studied using X-ray diffraction, EXAFS and four-probe electrical resistivity measurement. Integrated comparative analysis of the structural and phase composition and local atomic order in (FeCoZr)x (PZT)100-x films has for the first time shown the fundamental role of oxygen pressure PO during synthesis on nanoparticle oxidation and phase composition. We show that the oxygen pressure being within PO = 3.2 · 10–3 Pa an increase in x leads to a transition from nanoparticles of Fe(Co,Zr)O complex oxides to a superposition of complex oxides and a-FeCo(Zr,O) ferromagnetic nanoparticles (or their agglomerations). At higher oxygen pressures РО = 5.0 · 10–3 Pa the nanoparticles undergo complete oxidation with the formation of the (FexCo1-x)1-δO complex oxide having a Wurtzite structure. The forming structural and phase composition allows one to explain the observed temperature dependences of the electrical resistivity of granular films. These dependences are distinguished by a negative temperature coefficient of electrical resistivity over the whole range of film compositions at a high oxygen pressure (РО = 5.0 · 10–3 Pa) and a transition to a positive temperature coefficient of electrical resistivity at a lower oxygen pressure (РО = 3.2 · 10–3 Pa) in the synthesis atmosphere and x > 69 at.% in the films. The transition from a negative to a positive temperature coefficient of electrical resistivity which suggests the presence of a metallic contribution to the conductivity is in full agreement with the X-ray diffraction and EXAFS data indicating the persistence of unoxidized a-FeCo(Zr,O) ferromagnetic nanoparticles or their agglomerations. text/html en_US Modern Electronic Materials granular nanocomposite films ferroelectrics X-ray diffraction analysis electrical conductivity EXAFS Effect of synthesis conditions and composition on structural and phase states and electrical properties of nanogranular (FeCoZr)x (PZT)100-x films (30 ≤ x ≤ 85 at.%) Research Article

10.3897/j.moem.7.3.77105 2021-09-30 moem

National University of Science and Technology “MISIS”, Moscow, Russia A.V.Topchiev Institute of Petrochemical Synthesis, RAS, Moscow, Russia author Muratov, Dmitriy G. National University of Science and Technology “MISIS”, Moscow, Russia author Kozhitov, Lev V. https://orcid.org/0000-0002-4973-1328 National University of Science and Technology “MISIS”, Moscow, Russia author Yakushko, Egor V. A.V.Topchiev Institute of Petrochemical Synthesis, RAS, Moscow, Russia National University of Science and Technology “MISIS”, Moscow, Russia author Vasilev, Andrey A. JSC "Research Institute NPO" LUCH", Podolsk, Russia author Popkova, Alena V. North-Caucasus Federal University, Stavropol, Russia author Tarala, Vitaly A. Institute of Physical Materials Science, Siberian Branch of the Russian Academy of Sciences, Ulan-Ude, Russia Tomsk State University, Tomsk, Russia author Korovin, Evgenij Yu. 2021-09-30 2021-09-30 2021 Modern Electronic Materials 2452-1779 2452-2449 7 99 108 2021 10.3897/j.moem.7.3.77105 https://moem.pensoft.net/article/77105/ https://moem.pensoft.net/article/77105/download/pdf/ https://moem.pensoft.net/article/77105/download/xml/ Magnetic nanoparticles play an important role in rapidly developing advanced branches of science and industry, e.g. fabrication of magnetic storage media, synthesis of ferromagnetic liquids, medicine and chemistry. One problem faced in the usage of magnetic nanoparticles is their high chemical activity leading to oxidation in air and agglomeration. The chemical activity of magnetic nanoparticles stems from the contribution of their large specific surface to volume ratio. Carbon coating of nanoparticles reduces the interaction between nanoparticles. FeCoAl/C metal-carbon nanocomposites have been synthesized using IR pyrolysis of polymer/metal salt precursors. The effect of synthesis temperature (IR heating) in the range from 500 to 700 °C on the structure and composition of the nanomaterials has been studied. We show that the forming particles are the FeCoAl ternary solid solution with a FeCo based bcc lattice. An increase in the synthesis temperature from 500 to 700 °C leads to an increase in the coherent scattering region of three-component nanoparticles from 5 to 19 nm. An increase in the aluminum content from 20 to 30% relative to Fe and Co results in an increase in the size of the nanoparticles to 15 nm but this also entails the formation of a Co based solid solution having an fcc lattice. An increase in the nanocomposite synthesis temperature and a growth of the relative Al content as a result of a more complete carbonization and the structure-building effect of metals reduce the degree of amorphousness of the nanocomposite carbon matrix and lead to the formation of graphite-like phase crystallites having an ordered structure. The effect of synthesis temperature and relative content of metals on the electromagnetic properties (complex permittivity and permeability) of the synthesized nanocomposites has been studied. Synthesis conditions affect the radio absorption properties of the nanocomposites, e.g. reflection loss (RL) in the 3–13 GHz range. text/html en_US Modern Electronic Materials FeCoAl nanoparticles carbon matrix metal-carbon nanocomposites IR pyrolysis X-ray phase analysis Raman spectroscopy complex permittivity complex permeability reflection loss Synthesis, structure and electromagnetic properties of FeCoAl/C nanocomposites Research Article

10.3897/j.moem.7.3.74274 2021-09-30 moem

MIREA - Russain Technological University, Moscow, Russia author Kirill, Brekhov MIREA - Russain Technological University, Moscow, Russia author Lavrov, Sergey https://orcid.org/0000-0002-9432-860X MIREA - Russain Technological University, Moscow, Russia author Kudryavtsev, Andrey MIREA - Russain Technological University, Moscow, Russia author Ilyin, Nikita 2021-09-30 2021-09-30 2021 Modern Electronic Materials 2452-1779 2452-2449 7 109 113 2021 funder Ministry of Education and Science of the Russian Federation 10.13039/501100003443 10.3897/j.moem.7.3.74274 https://moem.pensoft.net/article/74274/ https://moem.pensoft.net/article/74274/download/pdf/ https://moem.pensoft.net/article/74274/download/xml/ Quasi-2D layers of transition metal dichalcogenides are promising candidates for creating saturable absorbers for pulsed lasers. However, the peculiarities of intense electromagnetic radiation’s influence on such structures have not been thoroughly studied. This paper explores the dynamics of photoexcited carriers in WSe2 flakes through experimental studies. These studies found that WSe2 flakes significantly change their optical properties under the influence of a high-power optical pump, allowed estimating the thermalization time of these structures (about 2 ps), and found that full relaxation takes more than 10 ps. The concentration of carriers in the semiconductor surface layer was estimated to be about 1028 m–3. It was found that standard description models of the optical response based on exciton resonances and absorption by free carriers could not adequately describe the experiments’ results. Thus, for an accurate description of the optical response, it was necessary to consider the effects associated with Coulomb screening that are caused by the high concentration of photo-excited carriers of the optical pumping densities used in this experiment. text/html en_US Modern Electronic Materials carriers lifetime graphene-like semiconductors time-resolved spectroscopy transition metal dichalcogenides Two-dimensional WSe2 flakes under high power optical excitation Research Article

10.3897/j.moem.7.3.75786 2021-09-30 moem

Technische Universität Dresden, Dresden, Germany author Suchaneck, Gunnar https://orcid.org/0000-0002-9440-2232 2021-09-30 2021-09-30 2021 Modern Electronic Materials 2452-1779 2452-2449 7 85 90 2021 10.3897/j.moem.7.3.75786 https://moem.pensoft.net/article/75786/ https://moem.pensoft.net/article/75786/download/pdf/ https://moem.pensoft.net/article/75786/download/xml/ Magnetization is a key property of magnetic materials. Nevertheless, a satisfactory, analytical description of the temperature dependence of magnetization in double perovskites such as strontium ferromolybdate is still missing. In this work, we develop, for the very first time, a model of the magnetization of nanosized, magnetically inhomogeneous Sr2FeMoO6-δ nanoparticles. The temperature dependence of magnetization was approximated by an equation consisting of a Bloch-law spin wave term, a higher order spin wave correction, both taking into account the temperature dependence of the spin-wave stiffness, and a superparamagnetic term including the Langevin function. In the limit of pure ferromagnetic behavior, the model is applicable also to SFMO ceramics. In the vicinity of the Curie temperature (T/TC > 0.85), the model fails. text/html en_US Modern Electronic Materials nanoparticles magnetization strontium ferromolybdate Magnetization of magnetically inhomogeneous Sr2FeMoO6-δ nanoparticles Research Article

10.3897/j.moem.7.4.51073 2021-12-30 moem

Kutateladze Institute of Thermophysics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia author Berdnikov, Vladimir S. 2021-12-30 2021-12-30 2021 Modern Electronic Materials 2452-1779 2452-2449 7 151 165 2021 10.3897/j.moem.7.4.51073 https://moem.pensoft.net/article/51073/ https://moem.pensoft.net/article/51073/download/pdf/ https://moem.pensoft.net/article/51073/download/xml/ This work is a brief overview of numerical study results for hydrodynamics and convective heat exchange for the classic Czochralski technique obtained at the Institute of Thermophysics, Siberian Branch of the Russian Academy of Sciences. Flow structure evolution has been compared for melts with Prandtl numbers Pr = 0.05, 16, 50 and 2700. The regularities of local and integral convective heat exchange in the crucible/melt/crystal system for thermal gravity, thermocapillary and heat-induced gravity capillary convection have been studied. The calculations have been carried out using the finite and compact difference methods. This work is a continuation of an article: Berdnikov VS (2019) Hydrodynamics and heat exchange of crystal pulling from melts. Part I: Experimental studies of free convection mode. Modern Electronic Materials 5(3): 91–100. https://doi.org/10.3897/j.moem.5.3.46647 text/html en_US Modern Electronic Materials crystal growth Czochralski technique melt hydrodynamics heat exchange thermal gravity capillary convection numerical simulation. Hydrodynamics and heat exchange of crystal pulling from melts. Part II: Numerical study of free convection mode Review Article

10.3897/j.moem.7.4.78569 2021-12-30 moem

National University of Science and Technology MISiS, Moscow, Russia author Shportenko, Andrey S. https://orcid.org/0000-0002-7658-2620 National University of Science and Technology MISiS, Moscow, Russia author Kislyuk, Aleksandr M. https://orcid.org/0000-0001-7185-8715 National University of Science and Technology MISiS, Moscow, Russia author Turutin, Andrei V. https://orcid.org/0000-0003-1090-3441 National University of Science and Technology MISiS, Moscow, Russia author Kubasov, Ilya V. https://orcid.org/0000-0002-6569-466X National University of Science and Technology MISiS, Moscow, Russia author Malinkovich, Mikhail D. https://orcid.org/0000-0001-9531-6072 National University of Science and Technology MISiS, Moscow, Russia Federal State Research and Develpment Institute of Rare Metal Industry (Giredmet JSC), Moscow, Russia author Parkhomenko, Yuri N. https://orcid.org/0000-0002-1970-9867 2021-12-30 2021-12-30 2021 Modern Electronic Materials 2452-1779 2452-2449 7 167 175 2021 10.3390/s19030614 10.1063/1.5038014 10.1039/d1tc04170C 10.17073/1609-3577-2020-1-5-56 10.1109/FREQ.1998.717939 10.1109/ultsym.2000.922554 7. Kuzminov Yu.S. Electro-optical and nonlinear-optical lithium niobate crystal: monograph. Moscow: Nauka; 1987: 264 p. (In Russ.) 10.1016/j.physleta.2020.126289 10.1134/s1063784217070271 10.1016/j.jpcs.2012.08.011 11. Volk T., Wöhlecke M. Lithium niobate: defects, photorefraction and ferroelectric switching. Berlin: Springer Science & Business Media; 2008: 249 p. 10.1080/00150190490457348 10.1134/S1063783412110339 10.1063/1.369775 10.4028/www.scientific.net/SSP.230.233 16. Akhmadullin I.Sh., Golenishchev-Kutuzov V.A., Migachev S.A., Mironov S.P. Low-temperature electrical conductivity of lithium niobate crystals of congruent composition. Fizika tverdogo tela. 1998; 40(7): 1307–1309. (In Russ.) 10.1002/adfm.201201174 10.1088/1361-648X/aa818d 10.1080/00150193.2016.1157438 10.1111/jace.16522 10.1080/00150199708228338 10.17073/1609-3577-2018-3-146-155 10.1134/S1063774508050210 10.1134/S1063739719080092 25. Emelyanova Yu.V., Morozova M.V., Mikhailovskaya Z.A., Buyanova E.S. Impedance spectroscopy: theory and application: textbook. allowance. Yekaterinburg: Ural Federal University named after the first President of Russia B.N. Yeltsin; 2017: 156 p. (In Russ.) 10.3897/j.moem.7.4.78569 https://moem.pensoft.net/article/78569/ https://moem.pensoft.net/article/78569/download/pdf/ https://moem.pensoft.net/article/78569/download/xml/ Lithium niobate is a ferroelectric material finding a wide range of applications in optical and acoustic engineering. Annealing of lithium niobate crystals in an oxygen-free environment leads to appearance of black coloration and concomitant increasing electrical conductivity due to chemical reduction. There are plenty of literary data on the electrophysical properties of reduced lithium niobate crystals though contact phenomena occurring during electrical conductivity measurement as well as issues of interaction between the electrode material and the test specimens are almost disregarded. The effect of chromium and indium tin oxide electrodes on the results of measurements of electrophysical parameters at room temperature for lithium niobate specimens reduced at 1100 °C has been investigated. It was found that significant nonlinearities in the VACs of the specimens at below 5 V distort the specific resistivity readings for lithium niobate. This requires measurements at higher voltages. Impedance spectroscopy studies have shown that the measurement results are largely affected by capacities including those probably induced near the contacts. It has been shown that the experimental results are described adequately well by a model implying the presence of near-contact capacities that are parallel to the specimen’s own capacity. Possible mechanism of the induction of these capacities has been described and a hypothesis has been proposed of the high density of electron states at the electrode/specimen interface that can trap carriers, the concentration of trapped carriers growing with an increase in annealing duration. text/html en_US Modern Electronic Materials ferroelectric lithium niobate monodomain crystal reduction annealing electrical conductivity contact phenomena chromium indium tin oxide impedance. Effect of contact phenomena on the electrical conductivity of reduced lithium niobate Research Article

10.3897/j.moem.7.4.81721 2021-12-30 moem

Astrohn Technology Ltd., Lytkarino, Russia author Naumov, Arkady https://orcid.org/0000-0001-6081-8304 Research and Development Center for Thin-Film Technologies in Energetics, St. Petersburg, Russia author Orehov, Dmitry L. 2021-12-30 2021-12-30 2021 Modern Electronic Materials 2452-1779 2452-2449 7 115 126 2021 10.3897/j.moem.7.4.81721 https://moem.pensoft.net/article/81721/ https://moem.pensoft.net/article/81721/download/pdf/ https://moem.pensoft.net/article/81721/download/xml/ The current condition and outlooks of the world semiconductor and polycrystalline silicon (poly-Si) markets have been analyzed. A long period of low PS prices which hindered the growth of investments into the industry has now changed for price recovery to an investment attractive level. Demand and offer balance for the period until 2024 and for the long term has been analyzed, and the main currently used PS processes have been reviewed. The current poly-Si market proficiency is expected to remain in the near and medium terms. However the “green turn” of the energy industry announced by all the governments, the development of local markets and the price recovery to an investment attractive level have promoted the development of new PS fab projects. Of special importance for Russia is the choice of Siemens trichlorosilane process parameters. A specific feature of the Russian market is the presence of several very important fields (solar energy, microelectronics, high-power electronics, photonics and fiber optics) which are small by international standards and equally face raw material shortage. It appears that Russia will greatly benefit from integral projects delivering solutions of multiple raw materials supply problems. text/html en_US Modern Electronic Materials solar energy polycrystalline silicon overproduction Siemens process fluidized bed process demand offer balance price pricing. The modern phase of the polysilicon market Research Article

10.3897/j.moem.7.4.78587 2021-12-30 moem

Research Institute for Nuclear Problems of Belarusian State University, Minsk, Belarus author Kharchenko, Andrei A. Research Institute for Nuclear Problems of Belarusian State University, Minsk, Belarus author Fedotova, Julia A. https://orcid.org/0000-0002-4471-0552 Belarusian State University, Minsk, Belarus author Slabukho, Valeryia Yu. Belarusian State University, Minsk, Belarus author Fedotov, Alexander K. https://orcid.org/0000-0002-7008-847X Belarusian State University, Minsk, Belarus Research Institute for Nuclear Problems of Belarusian State University, Minsk, Belarus author Pashkevich, Alexey V. Belarusian State University, Minsk, Belarus author Svito, Ivan A. https://orcid.org/0000-0002-4510-0190 SSPA Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk, Belarus author Bushinsky, Maxim V. 2021-12-30 2021-12-30 2021 Modern Electronic Materials 2452-1779 2452-2449 7 127 139 2021 10.3897/j.moem.7.4.78587 https://moem.pensoft.net/article/78587/ https://moem.pensoft.net/article/78587/download/pdf/ https://moem.pensoft.net/article/78587/download/xml/ Black phosphorus (b-P) single crystals having the n-type electrical conductivity produced in a high pressure set-up (~1 GPa) with six diamond anvils at 800 °C for 12 h have been studied. The electrical conductivity σ(Т,В) and the Hall constant Rh(Т,В) have been analyzed within one-band and two-band models as functions of temperature in the 2 < Т < 300 K range and magnetic field in the 0 < В < 8 T range. Fitting of the experimental σ(Т,В) and Rh(Т,В) curves suggests the following key properties of the crystals: (1) intrinsic conductivity type, (2) approximately equal electron and hole concentrations and mobilities, (3) anisotropic behavior of electron and hole conductivities, concentrations and mobilities and (4) combination of negative and positive contributions to magnetoresistance (magnetoresistive effect, MR). In a zero magnetic field the anisotropy coefficient α = [σа (Т) – σс (Т)]/σс (Т) below 50–70 K is positive whereas above 220 K its sign changes to negative due to a specific combination of the temperature dependences of carrier concentration and mobility. It has been shown that the negative sign of relative MR (negative magnetoresistive effect) dominates at T < 25 K and B < 6 T and is presumably caused by the effects of strong localization resulting from structural disorder. The positive MR sign (positive magnetoresistive effect) is associated with the Lorentz mechanism of carrier movement and exhibits itself above 25 K in 6–8 T magnetic fields. text/html en_US Modern Electronic Materials black phosphorus conductivity anisotropy magnetoresistance carrier transport two-band model. Electrical and galvanomagnetic properties of black phosphorus single crystals Research Article

10.3897/j.moem.7.4.80758 2021-12-30 moem

Scientific-Practical Materials Research Centre of the NAS of Belarus, Minsk, Belarus author Kalanda, Nikolay https://orcid.org/0000-0001-7679-4968 Scientific-Practical Materials Research Centre of the NAS of Belarus, Minsk, Belarus author Yarmolich, Marta V. https://orcid.org/0000-0002-8005-2171 Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus author Gurskii, Alexander https://orcid.org/0000-0001-5651-1000 Scientific-Practical Materials Research Centre of the NAS of Belarus, Minsk, Belarus author Petrov, Alexander V. https://orcid.org/0000-0003-1208-5913 Scientific-Practical Materials Research Centre of the NAS of Belarus, Minsk, Belarus author Zhaludkevich, Aliaksandr L. https://orcid.org/0000-0003-1900-0564 Scientific-Practical Materials Research Centre of the NAS of Belarus, Minsk, Belarus author Ignatenko, Оleg V. https://orcid.org/0000-0002-4344-5072 Helmholtz-Zentrum Hereon, Geesthacht, Germany author Serdechnova, Maria https://orcid.org/0000-0003-1879-5510 2021-12-30 2021-12-30 2021 Modern Electronic Materials 2452-1779 2452-2449 7 141 149 2021 10.3897/j.moem.7.4.80758 https://moem.pensoft.net/article/80758/ https://moem.pensoft.net/article/80758/download/pdf/ https://moem.pensoft.net/article/80758/download/xml/ In this work, solid solutions of La0.7Sr0.3Mn0.95Fe0.05O3-δ with different oxygen content were obtained by the solid-phase reactions technique. Based on the investigation of the dynamics of changes in the oxygen index (3 – δ) during heating of the samples, the formation of a stressed state in their grains as a result of annealing was established. This results in a decrease in the mobility of oxygen vacancies during the reduction of cations according to the Mn4+ + e– → Mn3+ scheme and explains the decrease of released oxygen amount with an increase of δ as well as the heating rate of the samples. When studying the magnetic properties of the obtained samples, it was found that the temperature dependence of the magnetization obeys the Curie–Weiss law and as the oxygen defficiency increases, the Curie temperature for solid solutions decreases. It was found that the particles are in a frozen ferromagnetic state when measured in the low-temperature region of the М (Т) dependence in “zero-field mode” at Т ˂ ТВ. The presence of ferromagnetism at Т ˃ ТВ leads to a magnetically ordered state, in which the resulting magnetic moment of the magnetic particle is influenced by thermal fluctuations. When considering the temperature values of the magnetization of lanthanum-strontium manganite samples, it was found that with an increase of temperature in the low-temperature region, magnetic ordering is disturbed due to the excitation of magnons with a quadratic dependence of the energy from the wave vector, the number of which increases in proportion to T3/2. This results in a decrease in the manganite magnetization. The observed temperature dependence of the magnetization measured in the “field-cooling mode” was approximated taking into account the quadratic and non-quadratic dispersion laws of the magnon spectrum. text/html en_US Modern Electronic Materials doped manganites oxygen nonstoichiometry temperature dependence of magnetization Curie temperature Bloch constant exchange interaction constant. Oxygen nonstoichiometry and magnetic properties of doped manganites La0.7Sr0.3Mn0.95Fe0.05O3-δ Research Article

10.3897/j.moem.8.1.89297 2022-04-12 moem

ADV-Engineering, LLC, Moscow, Russia author Abryutin, Vladimir N. https://orcid.org/0000-0003-3192-7055 ADV-Engineering, LLC, Moscow, Russia author Davydova, Elena V. https://orcid.org/0000-0003-0834-9007 ADV-Engineering, LLC, Moscow, Russia author Egorov, Mikhail A. https://orcid.org/0000-0002-0991-4349 ADV-Engineering, LLC, Moscow, Russia author Maronchuk, Igor https://orcid.org/0000-0003-2541-961X ADV-Engineering, LLC, Moscow, Russia author Sanikovich, Daria D. https://orcid.org/0000-0001-8576-1199 2022-04-12 2022-04-12 2022 Modern Electronic Materials 2452-1779 2452-2449 8 1 7 14 2022 10.3897/j.moem.8.1.89297 https://moem.pensoft.net/article/89297/ https://moem.pensoft.net/article/89297/download/pdf/ https://moem.pensoft.net/article/89297/download/xml/ A combined method of profound purification of Cd, Zn and Te developed by the Authors and allowing one to produce high-purity materials in a vertical reactor unit has been considered. The method includes the following processes: filtration refinement of metal alloy with the possibility of its vacuum degassing and additional purification through an oxide layer; first distillation with the possibility to use gettering additions in the melt and gettering filters; melt degassing with the removal of highly volatile impurities to the condenser in rough vacuum; second distillation and metal casting for weighed quantities. The Authors have developed and produced a test model of the unit for the experimental profound purification of metals using the method developed herein. Physical experiments have been conducted for obtaining 99,9999 wt.% purity Cd, Zn and Te for 30 residual impurities with a product yield of at least 55%. text/html en_US Modern Electronic Materials cadmium zinc tellurium impurity composition purification methods filtration vacuum distillation mass spectrometry Profound purification of tellurium, zinc and cadmium for electronic applications Research Article

10.3897/j.moem.8.1.84257 2022-04-12 moem

National University of Science and Technology MISiS, Moscow, Russia XRD Eigenmann GmbH, Schnaittach-Hormersdorf, Germany author Shcherbachev, Kirill D. https://orcid.org/0000-0003-4455-9730 National University of Science and Technology MISiS, Moscow, Russia author Voronova, Marina I. https://orcid.org/0000-0003-0233-7902 2022-04-12 2022-04-12 2022 Modern Electronic Materials 2452-1779 2452-2449 8 1 43 50 2022 10.3897/j.moem.8.1.84257 https://moem.pensoft.net/article/84257/ https://moem.pensoft.net/article/84257/download/pdf/ https://moem.pensoft.net/article/84257/download/xml/ ZnO single crystals are used for the fabrication of laser targets for high-energy electron irradiated UV laser cathode-ray tubes and homoepitaxial substrates for lasers. The technology of ZnO based UV LEDs imposes strict requirements to surface quality. Chemical-mechanical polishing delivers good surface quality but it is known that polishing of ZnO polar faces may yield different results. Surface-sensitive high-resolution X-ray diffraction (HRXRD) and X-ray reflectometry (XRR) methods have been used for studying the structure of (0001) and (000–1) polar faces of ZnO after chemical-mechanical polishing. Two double-sided polished (0001) ZnO substrates have been cut out from different hydrothermally grown ingots. The damage and density depth profiles for the Zn and O faces of the specimens have been retrieved from the X-ray diffraction curves and the specular reflection curves, respectively. Intensity distributions in the vicinity of the [0002] and [0000] reciprocal lattice sites have been taken on a D8 Discover X-ray diffractometer (Bruker-AXS, Germany) in a triple-crystal setup. For separating the coherent and incoherent scattering components, the intensity profiles have been analyzed along sections perpendicular to the diffraction vector and located at different distances from the reciprocal lattice sites. The HRXRD and XRR data have been compared with atomic force microscopy (AFM) data. The HRXRD method has revealed damaged layers at both faces of the specimens, with the layer thicknesses differing for the Zn and O faces, i.e., 5–7 nm for the Zn face and 10–11 nm for the O face. The XRR method has shown that both faces are sufficiently smooth. These results have been confirmed by AFM (RMS roughness ~ 0.23 ± 0.07 nm). However, the concentration of electrons in the superficial layers has been found to change. The layer thickness proves to be greater for the O face. We have hypothesized that the phenomena observed are caused by the difference in the chemical interaction of the Zn and O faces with the polishing agents. text/html en_US Modern Electronic Materials zinc oxide laser targets surface lattice Application of X-ray diffraction and reflectometry methods for analysis of damaged layers on polar faces of ZnO after surface chemical-mechanical treatment Research Article

10.3897/j.moem.8.1.85242 2022-04-12 moem

Institute of Solid State Physics, Chernogolovka, Russia author Agarkov, Dmitrii A. https://orcid.org/0000-0001-9650-6951 Prokhorov General Physics Institute, Moscow, Russia author Borik, Mikhail A. https://orcid.org/0000-0001-9799-3720 Institute of Solid State Physics, Chernogolovka, Russia author Korableva, Galina M. https://orcid.org/0000-0002-6353-5753 Prokhorov General Physics Institute, Moscow, Russia author Kulebyakin, Aleksej V. https://orcid.org/0000-0002-9005-4795 Prokhorov General Physics Institute, Moscow, Russia author Lomonova, Elena E. https://orcid.org/0000-0002-6662-8808 National University of Science and Technology MISiS, Moscow, Russia author Milovich, Filipp O. https://orcid.org/0000-0002-4327-1877 Prokhorov General Physics Institute, Moscow, Russia author Myzina, Valentina A. https://orcid.org/0000-0001-5602-9126 Ivan Petrovsky Bryansk State University, Bryansk, Russia author Popov, Pavel A. https://orcid.org/0000-0001-7555-1390 Prokhorov General Physics Institute, Moscow, Russia National University of Science and Technology MISiS, Moscow, Russia author Tabachkova, Nataliya Yu. https://orcid.org/0000-0002-0169-5014 2022-04-12 2022-04-12 2022 Modern Electronic Materials 2452-1779 2452-2449 8 1 1 6 2022 10.3897/j.moem.8.1.85242 https://moem.pensoft.net/article/85242/ https://moem.pensoft.net/article/85242/download/pdf/ https://moem.pensoft.net/article/85242/download/xml/ The phase composition and heat conductivity of (ZrO2)0.9(R2O3)0.1 solid solution single crystals have been studied, where R = (Gd, Yb, Sc, Y), (ZrO2)0.9(Sc2O3)0.09(Gd2O3)0.01 and (ZrO2)0.9(Sc2O3)0.09(Yb2O3)0.01. Single crystals have been grown by directional melt crystallization in a cold skull. The phase composition of the crystals has been studied using X-ray diffraction and Raman spectroscopy. The heat conductivity of the crystals has been studied using the absolute steady-state technique of longitudinal heat flow in the 50–300 K range. We show that at a total stabilizing oxide concentration of 10 mol.% the phase composition of the crystals depends on the ionic radius of the stabilizing cation. The (ZrO2)0.9(Sc2O3)0.1 crystals have the lowest heat conductivity in the 50–300 K range while the (ZrO2)0.9(Gd2O3)0.1 solid solutions have the lowest heat conductivity at 300 K. Analysis of the experimental data suggests that the heat conductivity of the crystals depends mainly on the phase composition and ionic radius of the stabilizing cation. Phonon scattering caused by the difference in the weight of the co-doping oxide cation has a smaller effect on the heat conductivity. text/html en_US Modern Electronic Materials zirconia crystal growth heat conductivity phase analysis Thermal conductivity of single crystals zirconia stabilized by scandium, yttrium, gadolinium, and ytterbium oxides Research Article

10.3897/j.moem.8.1.84317 2022-04-12 moem

Volgograd State University, Volgograd, Russia author Boroznin, Sergey V. https://orcid.org/0000-0003-0110-2271 2022-04-12 2022-04-12 2022 Modern Electronic Materials 2452-1779 2452-2449 8 1 23 42 2022 10.3897/j.moem.8.1.84317 https://moem.pensoft.net/article/84317/ https://moem.pensoft.net/article/84317/download/pdf/ https://moem.pensoft.net/article/84317/download/xml/ Introduction of substitution atoms into carbon nanotubes is an efficient tool of controlling their physicochemical properties which allows one to expand their practical applications. Boron is one of the most promising materials used for the modification of carbon nanotubes. However until now there has been no systematization of research data on the effect of boron impurity atoms on the properties of carbon nanotubes, and this limits potential industrial applications of this nanomaterial. In this work the most efficient currently existing methods of synthesizing carbon nanotubes containing boron impurity atoms have been discussed and the physicochemical properties of the obtained nanomaterials have been analyzed. Furthermore predictions as to their potential application domains have been made on the basis of available theoretical and experimental results. Comparison of the developed technologies has shown that the most efficient synthesis method is the catalytic vapor phase deposition. The mechanical, electronic and chemical properties of boron-carbon nanotubes have also been reviewed. For a more comprehensive analysis of the dependence of the physicochemical properties of carbon nanotubes on the concentration of boron impurity a model experiment has been carried out involving quantum mechanics instruments which has shown a direct correlation between the band gap of the material and the number of boron impurity atoms. The main practical application trends of boron-containing carbon nanotubes have been outlined. text/html en_US Modern Electronic Materials carbon nanotubes boron-containing nanotubes structural modification conductive properties adsorption nanotube synthesis Carbon nanostructures containing boron impurity atoms: synthesis, physicochemical properties and potential applications Review Article

10.3897/j.moem.8.1.85251 2022-04-12 moem

National University of Science and Technology MISiS, Moscow, Russia author Kislyuk, Aleksandr M. https://orcid.org/0000-0001-7185-8715 National University of Science and Technology MISiS, Moscow, Russia author Ilina, Tatiana S. https://orcid.org/0000-0002-1641-1731 National University of Science and Technology MISiS, Moscow, Russia author Kubasov, Ilya V. https://orcid.org/0000-0002-6569-466X National University of Science and Technology MISiS, Moscow, Russia author Kiselev, Dmitry A. https://orcid.org/0000-0003-1047-3007 National University of Science and Technology MISiS, Moscow, Russia author Temirov, Aleksandr A. https://orcid.org/0000-0001-9965-1046 National University of Science and Technology MISiS, Moscow, Russia author Turutin, Andrei V. https://orcid.org/0000-0003-1090-3441 National University of Science and Technology MISiS, Moscow, Russia author Shportenko, Andrey S. https://orcid.org/0000-0002-7658-2620 National University of Science and Technology MISiS, Moscow, Russia author Malinkovich, Mikhail D. https://orcid.org/0000-0001-9531-6072 Federal State Research and Develpment Institute of Rare Metal Industry (Giredmet JSC), Moscow, Russia National University of Science and Technology MISiS, Moscow, Russia author Parkhomenko, Yuri N. https://orcid.org/0000-0002-1970-9867 2022-04-12 2022-04-12 2022 Modern Electronic Materials 2452-1779 2452-2449 8 1 15 22 2022 10.3897/j.moem.8.1.85251 https://moem.pensoft.net/article/84251/ https://moem.pensoft.net/article/84251/download/pdf/ https://moem.pensoft.net/article/84251/download/xml/ In this work, the effect of long-term room temperature exposure on the electrical conductivity of the charged domain wall (CDWs) in nonpolar x-cut congruent lithium niobate (LiNbO3, LN) crystals has been studied. Bidomain ferroelectric structures containing head-to-head charged domain boundaries have been produced by diffusion annealing in air near the Curie temperature and by infrared annealing. The crystals have been reduction annealed in a nitrogen atmosphere for the formation of color centers and growth of the electrical conductivity. The current measured during the recording of the I-V curves of the specimens using scanning probe microscope after room temperature exposure for 91 days has been found to decrease. The effect of storage conditions on the electrical conductivity of the CDWs has been studied. Degradation of the electrical conductivity does not originate from the effect of environment on the crystal surface. It has been hypothesized that the degradation is caused by distribution of charge carriers shielding the bound charge of the CDWs. text/html en_US Modern Electronic Materials lithium niobate bidomain crystal charged domain wall diffusion annealing piezoresponse force microscopy reduction annealing Degradation of the electrical conductivity of charged domain walls in reduced lithium niobate crystals Research Article

10.3897/j.moem.8.2.90174 2022-06-30 moem

National University of Science and Technology, Moscow, Russia author Kobeleva, Svetlana P. https://orcid.org/0000-0002-0879-7013 2022-06-30 2022-06-30 2022 Modern Electronic Materials 2452-1779 2452-2449 8 59 64 2022 10.3897/j.moem.8.2.90174 https://moem.pensoft.net/article/90174/ https://moem.pensoft.net/article/90174/download/pdf/ https://moem.pensoft.net/article/90174/download/xml/ A method has been suggested for determining stoichiometry deviation in cadmium and zinc chalcogenides based on the temperature dependence of the ratio of components partial pressures during evaporation of solid compounds in a limited volume. The new method differs from methods implying the collection of excessive component during evaporation in large volumes. The method includes measuring the partial pressures of vapor phase components during material heating to above 800 K, solving a set of material balance equations and the electric neutrality equation, and calculating the stoichiometry deviation in the initial compound at room temperature. Intrinsic point defect concentrations are calculated using the method of quasichemical reactions. The independent variables in the set of material balance equations are the sought stoichiometry deviation, the partial pressure of the metal and the concentration of free electrons. We show that the parameter of the material balance equation which determines the method’s sensitivity to stoichiometry deviation, i.e., the volume ratio of vapor and solid phases, can be considered constant during heating and evaporation if this parameter does not exceed 50. If the partial pressure is measured based on the optical density of the vapors, then the sensitivity of the method can be increased to not worse than 10–6 at.%. text/html en_US Modern Electronic Materials stoichiometry deviation wide-band semiconductors cadmium and zinc chalcogenides partial pressur Determination of stoichiometry deviation in wide-band II–VI semiconductors on the basis of equilibrium vapor phase composition Research Article

10.3897/j.moem.8.2.84239 2022-06-30 moem

National University of Science and Technology MISiS, Moscow, Russia author Kozlova, Nina S. https://orcid.org/0000-0003-4057-9718 National University of Science and Technology MISiS, Moscow, Russia author Levashov, Evgeny A. https://orcid.org/0000-0002-0623-0013 National University of Science and Technology MISiS, Moscow, Russia author Kiryukhantsev-Korneev, Philipp V. https://orcid.org/0000-0003-1635-4746 National University of Science and Technology MISiS, Moscow, Russia author Chertova, Alina D. https://orcid.org/0000-0002-8668-5877 National University of Science and Technology MISiS, Moscow, Russia author Zabelina, Evgeniya V. https://orcid.org/0000-0002-5844-5673 2022-06-30 2022-06-30 2022 Modern Electronic Materials 2452-1779 2452-2449 8 51 57 2022 10.3897/j.moem.8.2.84239 https://moem.pensoft.net/article/84239/ https://moem.pensoft.net/article/84239/download/pdf/ https://moem.pensoft.net/article/84239/download/xml/ Ta–Si–C–N single-layer films have been synthesized by direct current magnetron sputtering on fused quartz substrates. The structural perfection of the films has been studied using X-ray diffraction, scanning electron microscopy and glow discharge optical emission spectroscopy. The optical parameters of the films have been studied using multi-angle spectrophotometry. The spectral dependences of the transmission coefficients of substrates and structures were measured for normal incidence of light in the wavelength range 200–2500 nm. We show that the transmittance spectrum of the specimen has an oscillating pattern due to interference phenomena that are typical for layered structures. The reflectance of the films and the substrates has been measured in the 200–2500 nm region for small incidence angles. The difference between the reflection coefficient at the maximum of the interference of the film and the corresponding reflection coefficient of the substrate at the same wavelength shows that the absorption in the film is low. A formula for determination of the film absorption index based on the measured parameters has been derived. The experimental and calculated data have been used for plotting the absorption spectra of the substrate, structure and film. Discrete refractive indices in the 400–1200 nm region have been calculated for reflections at two incidence angles by determining the positions of interference maxima in the reflectivity spectral responses. The results have been approximated using the Cauchy equation. The film thickness has been estimated to be df = 1046 nm ± 13%. The spectra of film extinction coefficients have been plotted with and without allowance for reflection. Obtained values of the refractive and absorption indices with and without reflection have been summarized in a table. text/html en_US Modern Electronic Materials multi-angle spectrophotometric methods spectral transmittance spectral reflectance absorption index refractive index TaSiCN films Multi-angle spectrophotometry as a tool for determination of film parameters on single-layer structures Research Article

10.3897/j.moem.8.2.97723 2022-06-30 moem

V.I. Nikitin Institute of Chemistry, Academy Of Sciences Of The Republic Of Tajikistan, Dushanbe, Tajikistan author Ganiev, Izatullo N. Dangara State University, Dangara, Tajikistan author Kholov, Ermakhmad J. V.I. Nikitin Institute of Chemistry, Academy Of Sciences Of The Republic Of Tajikistan, Dushanbe, Tajikistan author Jayloev, Jamshed H. Tajik Technical University named after academician M.S.Osimi, Dushanbe, Tajikistan author Ganievа, Nargis I. V.I. Nikitin Institute of Chemistry, Academy Of Sciences Of The Republic Of Tajikistan, Dushanbe, Tajikistan author Abulkhaev, Vladimir Dz. 2022-06-30 2022-06-30 2022 Modern Electronic Materials 2452-1779 2452-2449 8 79 83 2022 10.3897/j.moem.8.2.97723 https://moem.pensoft.net/article/97723/ https://moem.pensoft.net/article/97723/download/pdf/ https://moem.pensoft.net/article/97723/download/xml/ In the development of new materials designed for use under particularly harsh conditions, the task of making them corrosion-resistant arises. The practical solution to this task correlates with knowledge in the field of high-temperature oxidation of metals and alloys. When using conductive aluminum alloys for the production of fine wires, such as winding wire, certain difficulties may arise due to their insufficient mechanical strength and inflection before breaking. The solution of modern technological problems is associated with the use of highly oxidation- resistant materials. As a consequence, the study of the interaction of oxygen with metals and alloys has become very important due to the widespread use of new materials with special physical and chemical properties. The E-AlMgSi (Aldrey) aluminum conductive alloy occupies a special place among others. The oxidation process of the alloys was studied under isothermal air atmosphere by thermogravimetric method with continuous fixation of the sample mass for 1 h at temperatures of 723, 773 and 823 K. The oxidation kinetics curves and the value dependencies of the specific mass increase of cadmium in the E-AlMgSi (Aldrey) alloy quantity, time and temperature were constructed on the experimental data basis. The processing of the quadratic kinetic curves of the oxidation of the alloys at the above temperatures has shown that the oxidation of the alloys obeys the hyperbolic dependence y = kxn, where the value of n varies from 1 to 4. The lg k dependence on 1/T for the alloy E-AlMgSi (Aldrey) with cadmium shows that the oxidation rate increases with temperature and cadmium content increasing. text/html en_US Modern Electronic Materials E-AlMgSi (Aldrey) aluminum conductive alloy cadmium thermogravimetry oxidation oxidation rate activation energy E-AlMgSi (Aldrey) aluminum conductive alloy with the solid state cadmium oxidation kinetics Research Article

10.3897/j.moem.8.2.90062 2022-06-30 moem

Satbayev University, Almaty, Kazakhstan Scientific Production Center of Agricultural Engineering, LTD, Almaty, Kazakhstan author Tokmoldin, Serekbol https://orcid.org/0000-0003-0633-4733 Scientific Production Center of Agricultural Engineering, LTD, Almaty, Kazakhstan Satbayev University, Almaty, Kazakhstan author Klimenov, Vasiliy https://orcid.org/0000-0001-6836-3033 Satbayev University, Almaty, Kazakhstan Scientific Production Center of Agricultural Engineering, LTD, Almaty, Kazakhstan author Girin, Dmitriy https://orcid.org/0000-0002-7602-3378 Satbayev University, Almaty, Kazakhstan Scientific Production Center of Agricultural Engineering, LTD, Almaty, Kazakhstan author Chuchvaga, Nikolay A. https://orcid.org/0000-0003-4417-4996 Satbayev University, Almaty, Kazakhstan Scientific Production Center of Agricultural Engineering, LTD, Almaty, Kazakhstan author Aimaganbetov, Kazybek P. https://orcid.org/0000-0001-6367-9135 Satbayev University, Almaty, Kazakhstan author Kishkenebaev, Musabek P. Satbayev University, Almaty, Kazakhstan author Tarakanova, Svetlana N. Satbayev University, Almaty, Kazakhstan Scientific Production Center of Agricultural Engineering, LTD, Almaty, Kazakhstan author Tokmoldin, Nurlan S. https://orcid.org/0000-0002-0663-0228 2022-06-30 2022-06-30 2022 Modern Electronic Materials 2452-1779 2452-2449 8 65 72 2022 10.3897/j.moem.8.2.90062 https://moem.pensoft.net/article/90062/ https://moem.pensoft.net/article/90062/download/pdf/ https://moem.pensoft.net/article/90062/download/xml/ Mathematical simulation of temperature distribution on double-sided solar cells has been carried out. Differences in the configuration of photoelectric converters prove to solely amount to the fact that a double-sided solar cell has a more efficient heat sink at the rear side. Furthermore double-sided solar cells exhibit higher power conversion performance. Calculations confirm the correctness of giving preference to double-sided solar cells which is of great importance for the photoelectric converter design developed by us. Analysis of market-available photovoltaic technologies of solar energy to electric power conversion has led to the development of a photovoltaic converter on the basis of double-sided silicon heterojunction solar cells. The configuration developed is a moving platform having a photovoltaic cell array mounted on it and a light flux collector. A double-axis tracking system has been developed for the general case of planar attachment of solar cell modules. A 350 mm stroke drive provides for movement in the north-south direction and a 450 mm stroke drive, in the east-west direction. The task has been outlined to find the required arm for providing symmetrical positioning at the maximum rotation angle about the axis. As a result, technical solutions have been developed for the north-south and the east-west directions. Furthermore a schematic wiring diagram has been designed to implement the preset solar tracking system algorithm. The system is also fitted with a GPS/GLONASS module for system precision positioning and time synchronization. text/html en_US Modern Electronic Materials solar power plant HIT heterojunction technology agriculture photocell photovoltaic Development of a mobile independent solar power plant based on solid-state heterojunction photocells for agricultural purposes Research Article

10.3897/j.moem.8.2.97508 2022-06-30 moem

Moscow Aviation Institute (National Research University), Moscow, Russia author Sleptsov, Vladimir V. https://orcid.org/0000-0002-1171-336X Moscow Aviation Institute (National Research University), Moscow, Russia author Diteleva, Anna O. https://orcid.org/0000-0002-0819-6517 Moscow Aviation Institute (National Research University), Moscow, Russia author Kukushkin, Dmitry Yu. https://orcid.org/0000-0002-6968-1495 Moscow Aviation Institute (National Research University), Moscow, Russia author Tsyrkov, Roman A. Moscow Aviation Institute (National Research University), Moscow, Russia author Diteleva, Elizaveta O. 2022-06-30 2022-06-30 2022 Modern Electronic Materials 2452-1779 2452-2449 8 73 78 2022 10.3897/j.moem.8.2.97508 https://moem.pensoft.net/article/97508/ https://moem.pensoft.net/article/97508/download/pdf/ https://moem.pensoft.net/article/97508/download/xml/ A method for the formation of metal nanoparticles in a localized volume with a high energy density due to the flow of a pulsed electric discharge and the cavitation effect was studied. The mechanism of the formation of energy inhomogeneities providing for the generation of nanoparticles with a high specific energy intensity was considered. Dynamic heterogeneity forms in three stages. There is a breakdown of the inter-electrode gap and the formation of a vacuum volume filled with a vapor-gas medium. When the pressure inside the bubble increases, a pulsed gas discharge is ignited, thus generating metal nanoparticles. This leads to the formation of a localized volume in which the discharge energy reaches values of up to 106 K. The increase in energy in the bubble leads to its collapse, after which the metal nanoparticles pass from the high-energy (106) medium into water at room temperature, resulting in their hardening. Highly pure nanoparticles of various metals 5–15 nm in size are obtained; these can be grown on a single-crystal silicon surface at room temperature and positioned on the surface of porous materials and products of complex configuration. text/html en_US Modern Electronic Materials energy inhomogeneities metal nanoparticles nanoparticle generation electric pulse technology nanoparticle positioning carbon matrix Vacuum as a continuum medium forming energy inhomogeneities with a high energy density in the liquid phase Research Article

10.3897/j.moem.8.3.91521 2022-10-14 moem

Charmo University, Chamchamal, Iraq author Rahim, Barham Koya University, Koya, Iraq author Muhammadsharif, Fahmi F. https://orcid.org/0000-0002-4563-9671 University of Sulaimani, Sulaimani, Iraq author Saeed, Salah University of Duhok, Duhok, Iraq author Ketuly, Kamal 2022-10-14 2022-10-14 2022 Modern Electronic Materials 2452-1779 2452-2449 8 85 96 2022 10.3897/j.moem.8.3.91521 https://moem.pensoft.net/article/91521/ https://moem.pensoft.net/article/91521/download/pdf/ https://moem.pensoft.net/article/91521/download/xml/ In this paper, the optical properties and optoelectronic parameters of two newly synthesized polymers forming a donor : acceptor (D : A) binary system are investigated, followed by their subsequent doping with Sudan dye to obtain a ternary system. The donor polymer is P(TER-CO-TRI), while the acceptor is poly(5-hydroxy-L-Tryptophane). A cost-effective solution-processing was carried out to obtain different binary and ternary composites with concentration of 0.5 mg/ml. Optical absorption spectroscopy was used to measure the optical response and optoelectronic parameters, while FTIR and cyclic voltammetry were used to assess the structure and molecular energy levels of the polymers. The results revealed that the non-dispersive refractive index and energy gap of binary D : A was decreased from 1.56 to 1.52 eV and from 2.84 to 2.10 eV, respectively, when it was doped with Sudan dye. It was concluded that with the help of doping process, different values of energy band gap, refractive index, dielectric constant, and optical conductivity are achieved. This tuning achievement of the optoelectronic parameters is crucial in determining the possible applications of these materials in the organic electronics, photodiodes and photovoltaic devices. text/html en_US Modern Electronic Materials poly(5-hydroxy-L-Tryptophane) P(TER-CO-TRI) sudan dye energy band gap extinction coefficient refractive index dielectric constant optical conductivity A study on the optical properties and optoelectronic parameters of Sudan dye doped poly(5-hydroxy-L-tryptophane) and P(TER-CO-TRI) polymers Research Article

10.3897/j.moem.8.3.97596 2022-10-14 moem

ADV-Engineering, LLC, Moscow, Russia author Abryutin, Vladimir N. https://orcid.org/0000-0003-3192-7055 ADV-Engineering, LLC, Moscow, Russia author Maronchuk, Igor https://orcid.org/0000-0003-2541-961X ADV-Engineering, LLC, Moscow, Russia author Potolokov, Nikolai A. https://orcid.org/0000-0002-4259-6952 ADV-Engineering, LLC, Moscow, Russia author Sanikovich, Daria D. https://orcid.org/0000-0001-8576-1199 Sevastopol State University, Sevastopol, Russia author Cherkashina, Natalia I. https://orcid.org/0000-0003-3913-3495 2022-10-14 2022-10-14 2022 Modern Electronic Materials 2452-1779 2452-2449 8 97 105 2022 10.3897/j.moem.8.3.97596 https://moem.pensoft.net/article/97596/ https://moem.pensoft.net/article/97596/download/pdf/ https://moem.pensoft.net/article/97596/download/xml/ Simulation data have been presented on a process of deep refinement of tellurium based on Authors-developed refinement technique implemented through analysis of the process unit thermodynamical condition using Flow Simulation software, from SolidWorks software product. The technique put forward herein has been implemented in a plant comprising a vertical air-tight reaction chamber arranged inside a multi-zone thermal unit and executing a sequence of refinement stages which use different techniques and are integrated in a single process. The experimental data which have been the basis for calculations have allowed one to determine the boundary conditions of the mathematical model taking into account previous operation experience of the software product used. Temperature profile calculation has been carried out taking into account all the types of heat transfer in the system, the weight / dimensions parameters of system units and the physicochemical properties of refined tellurium, materials of equipment fittings and reactor media. The temperature modes of the process stages have been accepted as the boundary conditions for the thermal calculations, with temperatures being measured at equipment fitting locations at which temperature gages connected with a PID controller have been installed. The simulation of specific refinement process conditions allowed process modes and equipment fitting component design to be corrected. We have developed and produced test models of process and imitation equipment. Analysis of the thermal fields for the final model has shown good agreement with the mathematical model. Equipment upgrading and process parameter improvement on the basis of the simulation results have allowed T-u Grade tellurium (99.95 wt.%) refinement to a 99.99992 wt.% purity by 30 main impurities in the course of physical experiments, the product yield being at least 60%. text/html en_US Modern Electronic Materials tellurium impurity composition refinement techniques filtration vacuum distillation mass spectroscopy simulation Deep refinement of tellurium: equipment and process improvement through process simulation Research Article cGFnZT0xJnNldD1tb2VtJmZyb209JnVudGlsPSZtZXRhZGF0YV9wcmVmaXg9bW9kcw==