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Modern Electronic Materials 6(1) (2020)
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Materials science and technology. Semiconductors
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2452-1779
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Research Article
Potential of using inert gas flows for controlling the quality of as-grown silicon single crystal
Tatyana V. Kritskaya
,
Vladimir N. Zhuravlev
,
Vladimir S. Berdnikov
Part of: Materials science and technology. Semiconductors
10.3897/j.moem.6.1.53248
30-03-2020
Unique: 246 | Total: 364
Reprint: € 2,60
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