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Author

Konstantin V. Feklistov

Rzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences
Novosibirsk, Russia

1 article by this author

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Research Article

Electron and hole injection barriers between silicon substrate and RF magnetron sputtered In₂O₃ : Er films

Konstantin V. Feklistov, Aleksey G. Lemzyakov, Alexander A. Shklyaev, Dmitry Yu. Protasov, Alexander S. Deryabin, Evgeny V. Spesivsev, Dmitry V. Gulyaev, Alexey M. Pugachev, Dmitriy G. Esaev

10.3897/j.moem.9.2.109980

05-07-2023

Unique: 515 | Total: 670

Reprint: € 6,30

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