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Author

Dmitry N. Ivanov

National University of Science and Technology “MISiS”, Moscow, Russia

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1 article by this author

Research Article

Coupling effect in field Hall elements based on thin-film SOI MOS transistors

Aleksey V. Leonov, Victor N. Murashev, Dmitry N. Ivanov, V.D. Kirilov

10.3897/j.moem.6.4.65567

30-12-2020

Unique: 68 | Total: 92

Reprint: € 2,30

155-158

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