Review Article |
Corresponding author: Sergey V. Boroznin ( boroznin@volsu.ru ) © 2022 Sergey V. Boroznin.
This is an open access article distributed under the terms of the Creative Commons Attribution License (CC BY 4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
Citation:
Boroznin SV (2022) Carbon nanostructures containing boron impurity atoms: synthesis, physicochemical properties and potential applications. Modern Electronic Materials 8(1): 23-42. https://doi.org/10.3897/j.moem.8.1.84317
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Introduction of substitution atoms into carbon nanotubes is an efficient tool of controlling their physicochemical properties which allows one to expand their practical applications. Boron is one of the most promising materials used for the modification of carbon nanotubes. However until now there has been no systematization of research data on the effect of boron impurity atoms on the properties of carbon nanotubes, and this limits potential industrial applications of this nanomaterial. In this work the most efficient currently existing methods of synthesizing carbon nanotubes containing boron impurity atoms have been discussed and the physicochemical properties of the obtained nanomaterials have been analyzed. Furthermore predictions as to their potential application domains have been made on the basis of available theoretical and experimental results. Comparison of the developed technologies has shown that the most efficient synthesis method is the catalytic vapor phase deposition. The mechanical, electronic and chemical properties of boron-carbon nanotubes have also been reviewed. For a more comprehensive analysis of the dependence of the physicochemical properties of carbon nanotubes on the concentration of boron impurity a model experiment has been carried out involving quantum mechanics instruments which has shown a direct correlation between the band gap of the material and the number of boron impurity atoms. The main practical application trends of boron-containing carbon nanotubes have been outlined.
carbon nanotubes, boron-containing nanotubes, structural modification, conductive properties, adsorption, nanotube synthesis
Carbon-based nanostructures have been among the most important nanotechnology materials for several decades. Due to their unique properties they have found application in various branches of industry, science and engineering. However the synthesis of stable nanostructures with preset properties remains one of the key problems. One of the simplest tools for controlling the properties of these materials is the functionalization of carbon nanotubes (CNT), i.e., modification of the sp2-hybridized nanotubes by reactions of substitution for similar heteroatoms or functional groups [
Despite the large scope of research data on the interaction of CNT with various materials, boron (B) and nitrogen (N) remain the most suitable elements for the substitution reactions. Their use has a number of prerequisites, e.g. the oxidation/reduction properties of heteroatoms providing for their straightforward incorporation into the nanotube lattice [
From the viewpoint of electronic structure the boron and nitrogen atoms have a number of similarities. The reaction of pure CNT saturation with boron atoms allows one to modify the properties of semiconductor nanotubes towards metallic properties by lowering the Fermi level to the valence band [
Figure
Both pure CNTs [
D. Carroll et al. [
Based on high-energy laser exposure of a graphite rod for graphite evaporation from its surface due to high carbon particle temperatures achieved and further formation of CNT [
Based on the interaction of pure CNT with various precursors (e.g. В2О3 or Н3ВО3) in an inert gas atmosphere (typically helium or argon). This reaction is usually achieved at high temperatures (1000–2000 °C) for a preset time (from 30 min to 4 h). A number of works described the application of these reactions for the synthesis of boron-containing nanotubes [
W. Chiang [
TEM images of (a and b) single-, (c and d) two- and (e and f) multi-walled boron-containing nanotubes synthesized using different methods: (a–d) triisopropyl borate decomposition; (e and f) with ethanol and triethyl borate. The technology of the nanotubes shown in Figs (a and b) is described in [39]; (c and d) in [40]; (e and f) in [14]
This method is one of the most widely used methods for the large-scale synthesis of CNT with a sufficiently low cost [
The synthesis of boron-containing nanotubes using this method was described in a number of works [
One of the key tasks to be solved for obtaining CNTs containing boron impurity atoms using this method is the selection of a suitable catalyst. Another key item is to achieve homogeneous catalyst deposition onto the substrate for the formation of an array of uniform boron-carbon nanotubes. Furthermore avoiding the effect of catalyst on the final reaction product is also an important problem the solution of which affects the final result [
K. Tomita et al. [
In this section various methods of synthesizing boron-carbon nanotubes will be analyzed. Table
Parameter | Electric arc method | Laser ablation | Substitution reaction | FCCVD |
Number of nanotubes synthesized | Small | Small | Large | Large |
Quality of nanotubes obtained | High | High | High | High |
Continuous fabrication potential | One batch per cycle | One batch per cycle | One batch per cycle | One batch per cycle / continuous fabrication possible |
Method cost | High | High | Medium | Low |
Special equipment requirements | Existing technologies to be modified | Special target selection | Reaction conditions selection | Reactor for large-scale nanotube synthesis can be developed without additional changes |
When impurity atoms are introduced into carbon nanotubes a heterostructure forms on the nanotube surface [
Element | Number in Mendeleev Table | Electronic structure | Number of valence electrons | Atomic radius (nm) | Electrical negativity |
В | 5 | 1s22s22p1 | 3 | 180 | 2.04 |
С | 6 | 1s22s22p2 | 4 | 170 | 2.55 |
As follows from Table
The introduction of boron impurity atoms changes the physical, chemical, mechanical and electrical properties of the nanotubes. As discussed in the previous section, boron introduction produced an inhomogeneous distribution of electron density in carbon nanotubes leading to an increase in the reactivity [
H. Rezania et al. [
The introduction of boron impurity atoms produces p-type states that add to the conducting properties of carbon nanotubes. For boron-containing nanotubes the vacant 2pz orbital of B interacts with the π orbital of carbon for electron transfer. These electrons become quite active due to the low electrical negativity. As a result the O2 molecules reduce in positively charged regions of B that support the oxygen reduction reaction [
The search for an environment friendly fuel for stopping carbon and carbon monoxide atmospheric pollution has been one of the key topics for many researchers over the last 40 years [
A promising way to solve these tasks is to explore the possibility of using nanomaterials as potential hydrogen storage. A wide variety of materials from carbon nanostructures to borophen have been studied [
Experiments for hydrogen saturation of the obtained boron-containing nanotubes showed that the reaction yields better results than for pure carbon nanotubes. For MWCNT this percentage was 0.02%, for SWCNT it was 0.022% and for boron-containing nanotubes, 0.157% (pressure 10 barr, temperature 303 K). Analyzing the adsorption-supporting mechanisms one should pay special attention to the charge distribution on the adsorbate surface. B. Viswanathan et al. [
One of the most important tasks of the chemical industry nowadays is the search for materials that can be used for the oxygen reduction reaction [
For the experiment [
The X-ray diffraction studies showed that the boron-containing nanotubes with different concentrations of boron impurity atoms adsorb oxygen better than pure carbon nanotubes (Fig.
X-ray diffraction data for nanotubes: (a) pure nanotubes before oxygen exposure; (b) X-ray diffraction patterns for nanotubes exposed to oxygen [63].
Thus the experiments [
Various measurements (e.g. electron paramagnetic resonance, magnetic susceptibility, specific resistivity, Hall effect and magnetoresistivity) showed that the carrier mobility and diamagnetic susceptibility of these materials strongly depend on the boron concentration. Earlier methods of boron addition to carbon were discussed [
Electron spectroscopy confirmed the presence of boron in the CNT (see inset in Fig.
Boron-containing CNT have the same 3D ordering as ordinary graphite structures exhibiting the 101 X-ray reflection (Fig.
X-ray diffraction showed that the number of layers in multi-walled boron-containing nanotubes is approx. 42 which is in agreement with the structure of MWCNT [
The introduction of boron atoms into carbon hexagons causes a distortion of the symmetry and produces oscillations that are detected in the IR range. Data for nitrogen doped graphite [
Spectroscopic patterns of multi-walled and boron-containing CNTs are shown in Fig.
To study the conducting properties of the boron-containing nanotubes we used microwave conductivity measurements. The data are shown in Fig.
The ВС3 nanostructures occur typically in the outer layers rather than in the inner ones. D. Carroll et al. [
The tendency of boron atoms to occupy the outer layers of multi-walled nanotubes is accounted for by the fact that substitution reactions require a lot of energy even in the outer layers, whereas in the inner layers the energy consumption of substitution reactions would be even higher due to a greater stress, the process therefore becoming energetically unfavorable [
X-ray diffraction patterns of (top) boron-doped and (bottom) multi-walled carbon nanotubes [67].
From the viewpoint of nanotubes application as hydrogen storage, the key requirement is the presence of heteroatoms capable of efficiently intensifying hydrogen adsorption without modifying the structure and geometry of the nanotube [
Along with B-containing CNT, hydrogen adsorption was studied for B- and N-containing CNT [
Summarizing the multiple opinions, hydrogen adsorption isotherm interpretations and reaction kinetics descriptions it is safe to say that hydrogen interaction with boron-carbon nanotubes has been well studied experimentally. The higher hydrogen adsorption of boron-carbon nanotubes is accounted for by the presence of B impurity atoms in contrast to pure CNTs. Interestingly, boron-carbon nanotubes can also be used as filler for the improvement of the electrical, mechanical and structural properties of composite materials [
CNTs can be used as a catalyst or a catalyst carrier due to their unique properties such as regular cylindrical shape that produces a nanochannel, a graphene-like structure of the side nanotube surface and the sp2 hybridized state of the carbon atoms [
Using boron-containing nanotubes as catalyst, Y. Lin et al. [
The oxygen reduction reaction is the slowest in fuel cells any of aggregation state. This can be caused by the higher binding energy of the O2 molecule (498 kJ/mole) [
The main synthesis methods of boron doped CNT are shown above in Table
S. Peng et al. [
S. Yao [
Due to the growing interest demonstrated in various branches of industry to the control of properties of nanomaterials used, their detailed study is of crucial importance and quite timely. The results of experimental works described in the previous sections did not demonstrate a clear correlation between the concentration and orientation of boron impurity atoms and the physicochemical properties of the modified nanotubes. Model experiments for various types of boron-carbon nanotubes can be helpful in identifying these regularities [
For this reason a stagewise theoretical study of the correlation between the semiconducting properties of boron-carbon nanotubes using the density functional theory and MNDO was carried out [
For the model experiment, boron-carbon nanotubes containing 50% boron impurity atoms were studied, i.e., the case where each second carbon atom is substituted for a B atom. The test materials were (n,0) nanotubes [
Nanotubes with different diameters were chosen for the study, i.e., zigzag type (n,0) nanotubes, where the index n = 4, 6, 8, 10, 12. The nanotube cluster length was at least 8 layers of hexagons along the main nanotube axis, and the number of hexagons at the perimeter of the nanotubes was n in accordance with the twisted object construction principle [
Furthermore the model experiment provided source data for the construction of single-electron spectra of the nanotubes (Fig.
Then the behavior of the conducting properties of the CNT with a decrease in the content of the boron impurity atoms in the nanotube was studied [
For nanotubes with the carbon and boron atomic ordering corresponding to the А type structure the band gap ∆Eg calculation results according to the above described principles revealed two important features of the electronic structure of the test nanotubes. First, these nanotubes are semiconductors by conductivity type and second, by analogy with pure CNTs, they have a relationship between the nanotube diameter and the band gap, i.e., an increase in d leads to a decrease in ∆Eg. The energetic structure of the test B type nanotubes, e.g. the band gap, showed them to be narrow-gap semiconductors. Analysis of the electronic structure of the nanotubes showed that their valence band is formed by the s and p orbitals of the C atoms and the s orbitals of the B atoms. The band gap values of the nanotubes are summarized in Table
Single-electron spectra of the test carbon nanotube types with boron impurity atoms are shown in Fig.
The final stage of the study of the effect of boron impurity atoms on the electronic structure of the CNTs was a study of the case of the minimum B atoms concentration, i.e., the case of only one C atom substitution in the hexagon. This nanotube can be denoted as a ВС5 nanotube. The atomic ordering variant for a ВС5 nanotube is shown in Fig.
The above listed band gap values suggest that ВС5 nanotubes are narrow-band semiconductors according to their conductivity type. The band gap of the nanotubes varies in a periodical manner with an increase in the nanotube diameter [
Table
Analysis of all the experimental concentrations of boron impurity atoms in CNT suggests the following conclusions. (n,n) type nanotubes are dielectrics [
The results of the model experiment suggesting semiconducting properties of CNTs containing boron impurity atoms are in agreement with practice [
Energy gap of boron-containing nanotubes and pure carbon nanotubes as a function of nanotube diameter
Nanotube diameter (nm) | ΔEg (eV) (С) | ΔEg (eV) (ВС5) | ΔEg (eV) (ВС3) | ΔEg (eV) (ВС) | |
Type А | Type B | ||||
0.3 | 0.81 | 0.13 | 0.81 | 0.54 | 0.02 |
0.47 | 0.81 | 0.69 | 0.54 | 0.54 | 0.09 |
0.63 | 0.27 | 0.26 | 0.26 | 0.54 | 0.02 |
0.77 | 0.27 | 0.19 | 0.19 | 0.54 | 0.02 |
0.95 | 0.27 | 0.69 | 0.07 | 0.54 | 0.02 |
Atomic ordering variants in ВС3 clusters of (6,0) nanotubes: (a) mutual arrangement of the B and C atoms in the A type nanotubes; (b) mutual arrangement of the B and C atoms in the B type nanotubes.
Single-electron spectra of (6,0) CNT having a ВС3 structure: (a) A type atomic ordering; (b) B type atomic ordering.
Carbon nanotubes have for a long time been subject of multiple research works world over. Several thousands of reports on the topic are published annually. However nanotubes containing impurity atoms, e.g. boron have been studied to a far less extent. Most of the works on the topic have dealt with boron-containing nanotube synthesis methods. More detailed studies of the properties and potential applications are not abundant in literature.
Boron has a smaller atomic size than carbon. Therefore the nanostructures produced as a result of the respective substitution reactions are more stable than those produced by substitution for other chemical elements, and one can therefore expect successful practical application of boron doped nanotubes. The main disadvantages of boron doped nanotubes are the absence of a commercial nanomaterial technology and the lack of possibility to control the concentration of boron impurity atoms. A key to these problems is the CVD technology of CNTs containing boron impurity atoms. Industrial scalability of this process is only a matter of time provided there is a systematic approach to the development of this nanotube technology aimed at obtaining ample information on the process features and the desired final product. Thus, despite the emphasis of most researchers on various CNT technologies containing boron impurity atoms, the CVD technology remains quite important and timely.
Carbon nanotubes containing boron impurity atoms can find application in various fields of science and engineering. In the exploration of the possibility of hydrogen adsorption these nanotubes have shown the best results compared with undoped nanotubes or nanotubes containing nitrogen impurity atoms and boron and nitrogen containing CNTs. Industrial applications of nanotubes require more detailed studies of nanotubes containing different boron impurity concentrations and exploration of the possibility to develop composite materials on their basis. Catalyst applications of CNTs containing boron impurity atoms have been studied in a greater detail. The presence of boron impurity atoms in nanotubes improves their reaction capacity due to charge redistribution in the heterostructure. However studies of the chemical properties of boron-carbon nanotubes synthesized using substitution reactions will offer even greater application opportunities. Results of boron doped CNT applications in sensor technologies are also impressive. It is the introduction of impurity atoms that allows detecting a number of important chemical compounds, and varying dopant concentration in nanotubes allows one to control the sensitivity of nanosensors.
Summing up it is safe to say that boron is one of the most promising materials for substitution reactions in CNT. It only depends now on researchers to which extent the whole inherent potential of this nanomaterial will be explored.