Corresponding author: Arnold S. Borukhovich ( super.arnold15@yandex.ru ) © 2020 Arnold S. Borukhovich.
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Citation:
Borukhovich AS (2020) Europium monoxide as a basis for creating a high-temperature spin injector in the semiconductor spintronics. Modern Electronic Materials 6(3): 113-123. https://doi.org/10.3897/j.moem.6.3.54583
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The results of the creation of a high-temperature spin injector based on EuO: Fe composite material are discussed. Their magnetic, electrical, structural and resonance parameters are given in a wide range of temperatures and an external magnetic field. A model calculation of the electronic spectrum of the solid solution Eu–Fe–O, responsible for the manifestation of the outstanding properties of the composite, is performed. The possibility of creating semiconductor spin electronics devices capable of operating at room temperature is shown.
composite, europium monoxide, magnetic semiconductor, magnetization, spintronics, spin-polarized current transport, super paramagnetizm
In the practice of creating real spintronic structures and spin transistors of cryogenics, as is known, so-called dilute magnetic semiconductors (DMS) are widely used. These are semiconductor alloys containing magnetically active ions of manganese: BexMnyZn1-x-ySe (x = 0.07, y = 0.03, Tc ≈ 7 K), Ga1-xMnxAs (x = 0.045, Tc ≈ 52÷110 K), Cd1-xMnxGeP2 (Tc = 320 K) and some others [
, (1)
where are: Asd is an integral of s-d – exchange for conduction electrons; x is the concentration of the Mn magnetic ions; S0 is their effective spin; Bs is the Brillouin function; μB is Bor’s magnetron; Teff is the effective spin temperature of magnetic ions; s is the spin of the charge carriers. Some compositions of such DMS have record-high values of the g-factor of conduction electrons for semiconductors. For example, in the first of the aforementioned g ≈ 100. All of this serves to realize the spin current-carrying over the Zeeman levels of such crystals without a spin-flip. Moreover, the uniformity and similarity of the crystal lattices parameters of similar DMS with basic nonmagnetic semiconductor phases allows constructing the superlattices from them using planar technology, for example, by molecular beam epitaxy, and layer-by-layer assembly. It was just such a construction of such structures that, as noted, it was possible to obtain Ga–Mn–Sb layered structures with Tc ≈ 400 K, and also the structure of Cd1-xMnxGeP2 with a value of Tc = 320 K. It was supposed to create spintronic structures and spin transistors capable of operating at room temperatures, with their participation. However, this apparently did not succeed. The spintronic devices created on their basis could work steadily only at temperatures below 200 K [
The manifestation of ferromagnetism with a Curie temperature exceeding room temperature in the anatase phase of Ti1-xCoxO2 oxide has not been explained to this day. Although the mechanisms of its possible manifestation have been widely discussed in the literature [
Taking into account the results of the above works, the authors of the publications [
Here it is necessary to note the following. In the early 1970’s when the problem of a possible increase in the Curie temperature of the EuO phase was actively solved, attempts were made to solve it by doping the monoxide with transition metals of the 7th group of the periodic system – Fe, Co, Ni [
Since it follows from the preceding that europium monoxide does not form a solid solutions with iron, the creation of the required composite at the dispersion of metallic iron particles in EuO was carried out by chemical reduction of a mixture of powders of sesquioxides of europium and iron during their high-temperature vacuum reduction in the presence of carbon, to the Europium monoxide state in the structure of NaCl, and metallic α-iron. Calculation of charges was carried out according to the reaction equation [
Fe2O3 + Eu2O3 + 4C = 2Fe + 2EuO + 4CO↑. (2)
The final products of the reduction of the mixture of higher oxides of iron and europium with carbon are fine magnetic powders consisting of 300 to 500 nm metal iron granules uniformly dispersed in the oxide matrix of EuO. Powders are stable in air during long-term storage, they are easily pressed into products of various shapes.
Annealing of the latter at 800 °C at pressure of 10-1 Pa for two hours does not cause a change in the chemical and phase composition of the material. Measurements of the nominal electrical resistivity of the composite were carried out at sintered samples of rectangular shape at room temperatures. According to these data (Fig.
Dependences of the nominal of the specific electric resistivity (ρ) and the ferromagnetic saturation moment (M) of the EuO : Fe composite on composition.
Thus, the value of the activation energy of the composite (ΔE) was estimated from the position of the absorption edge on the optical transparency curve – it corresponds to a value of ΔE ≈ 0.75 eV [
From these data, it follows that the composite really is a heterogeneous mixture of two ferromagnets. Moreover, the value of the magnetization of the Fe component for this concentration range almost linearly corresponds to its share presence in the composite. At the room temperature, the ferromagnetic saturation moment of this composition composite is close to the value of M ≈ 60 emu/g, which completely corresponds to the Fe-component, although it exceeds it in absolute terms by approximately 10÷15 units. At low temperatures the ferromagnetic moment predominates mainly due to the contribution of the divalent europium ion in the composite against which the contribution of iron to M is ≤ 30%. Throughout the temperature range the samples of the composite exhibit the properties of magnetically soft ferromagnet. A feature of the M (T) dependence in Figure
Temperature dependences of the magnetization of a composite at low (a) and elevated temperatures (b).
The synthesized volumetric samples of the (EuO)1-xFex composites were further used as precursors for obtaining thin crystalline nanoscale films applied to different substrates: InSb (001), GaAs (100), and Si (111) single crystals, and also optical glass. Before the deposition the substrates were pretreated with a plasma of a microwave discharge in a successively changing working medium of oxygen, hydrogen, and argon at a pressure of ~ 0.1 Torr. The process of sputtering itself was performed on the developed methodologies with using standard vacuum deposition techniques [
X-ray patterns of synthesized film samples: (a) the starting powder of the target EuO (25%) Fe; (b) EuO/Fe film on InSb (001); (c) EuO /Fe film on silicon (111); (d) is a film of EuO/Fe on GaAs (111). Indication of reflexes by data [23].
Investigations of the surface morphology of the films showed that the samples on the InSb substrates are the most homogeneous, their root-mean-square roughness is less than 10 nm both in the initial state and with a decrease in thickness to 100 nm. With smaller film thicknesses, punctures were formed deep down to the substrate material in the intergrowth regions of the islands composing the film, and differing in size as much as possible in the images of the atomic force microscope. The films are characterized by the semiconductive character of the electrical conductivity with the activation energy, ΔE ≈ 0.75 eV. At room temperature, the specific resistivity of films with a thickness of 200÷500 nm had a value of ρ ~ 2·102÷4·10-3 Ohm·cm [
The behavior of the magnetization of the composite films (Fig.
To detail the results of magnetic studies of EuO : Fe composites, a study of their nuclear gyromagnetic resonance (NGR or Mossbauer) spectra on the 57Fe and 151Eu isotopes was made [
Figure
Magnetization curves of the composite film in contact with GaAs: along the contact plane (easy direction, para) and perpendicular (difficult direction, perp) at room temperature.
The magnetization of the (EuO)0.75Fe0.25 composite film on a silicon substrate under conditions of ZFC and FC.
The Mossbauer spectra of 57Fe of the composite films (Fig.
The Mossbauer spectrum of the 151Eu powder of the composite is illustrated in Fig.
The presence of Eu3+ ions in the composite, on the one hand, can be considered as an impurity phase of Eu2O3 due to the conditions of its synthesis – high-temperature reduction of a sesquioxide or a mixture (Eu2O3 + Fe2O3) by carbon. Based on the results of chemical and X-ray spectral analysis, the presence of this phase in the composite did not exceed 1% by weight.
On the other hand, comparison of state line intensities of the Eu3+ ions (~0.55) in the spectrum with that for the ion state Eu2+ (~0.45) may indicate the appearance in the composite of some “inductive" effect associated with the effect of iron atoms on the electron density on 151Eu nuclei. This, as noted above, can correspond to the manifestation of an indirect (via the p-state of oxygen) d–f exchange between iron and europium to form Eu–Fe–O clusters. A possible, even partial, transfer of the electron density from Eu2+ to the iron will lead to the polarization of the spins of these ions, which under these conditions is equivalent to the manifestation of their ionic state in the cluster as Eu3+, and the states of the iron ion as Fe+. As a result, the ferromagnetic moment of such an Eu3+Fe+O cluster at T > 70 K (the temperature of the ferromagnetic disordering of the EuO phase) due to the spin polarization of the paramagnetic europium ions from the nearest environment of the impurity Fe+ ion and localized on it is increased. As follows from the above mentioned magnetic data, numerically it exceeds the ferromagnetic moment inherent in pure iron at these temperatures by more than 10 units (in the SI system). And this, as noted, leads not only to an increase in the specific magnetization of the composite at room temperature, but and makes it a record among all other known materials, especially semiconductor, recommended for spintronics. When using a composite as a spin injector, these properties will be to contribute an increasing in the share of spin current transfer at spintronic structures created with its participation.
For a possible theoretical justification and understanding of the behavior of the experimental parameters of the EuO : Fe composite, the electronic band structure of the Eu1-xFexO solid solution (SS) structurally included in its composition was calculated in comparison with the same calculation for “pure" europium monoxide [
In calculating [
The radii of the atomic spheres were 0.21 nm, the total number of k points in the irreducible part of the Brillouin zone for a composition with a concentration of 12.5% Fe was 72, and for a composition with a 6.25% Fe – concentration of 32. The resultant magnetic moments on Fe ions were 3.74μB, on Eu2+ cations – 6.88÷6.885μB, and on Eu3+ – 6.86÷6.875 μB. This is all under conditions of T = 0 K. The final results of the calculation of the SS electronic band structure at the spintronics composite are shown in Figs
The density of electronic states of the Eu1-xFexO solid solution with a dopant concentration of 6.5 at.%.
The density of electronic states of SS Eu1-xFexO with a dopant concentration of 12.25 at.%.
The density of the electronic 3d-states of iron (according to Fig.
The calculated densities of the band states for pure and iron-doped europium oxide shown in Figures
The most significant changes in the spectrum of the EuO band states when doped with iron are the appearance of two bands of states with a positive spin-up direction at the energy near -6 eV and one band with a negative spin-down direction at Fermi level (Fig.
The current-voltage characteristics of a spin diode without a magnetic field and in a field of 200 mT (2 kOe)
Band 1’ corresponds to spin-down 3dFe-states with eg-type local symmetry: it contains one electron. Band 2’ corresponds to the empty zone of spin-down 3dFe states. It follows that the iron ions in the monoxide structure retain 6 electrons, i.e. they are in the charge state 2+ and should have a magnetic moment equal to 4μB which corresponds to the data given above. The spin-up band of the 4f-states in the near Fermi region contains ~ 7 electrons, i.e., the magnetic moment of the Eu atoms is ~ 7μB, which also corresponds to the values given above. Consequently, the formation of O2- anions occurs due to electron transfer from the 4s-states of iron and 6s-states of europium. The reason for the presence of large magnetic moments on iron atoms is a large exchange splitting of the states of iron ions – at around 5 eV (Fig.
It follows from the calculations that at low iron concentrations in EuO, its impurity electrons at states below the valence band, like spin-down electrons at the Fermi level, form rather narrow (local) energy levels. With increasing the iron concentration, the states in near the Fermi region are blurred into the d-impurity band which is also a direct indication of the d–f-exchange interaction between the impurity and matrix electrons, which leads to an increase in the Curie temperature. From the foregoing, it is easy to see that the results of the latest quantum-chemical calculations of the electronic band structure of the Eu1-xFexO solid solution, which is one of the structural components of the EuO : Fe composite, are in surprisingly good agreement with its experimentally established magnetic, optical and resonance characteristics. Although the entire complex of features of the electronic parameters of the composite given in Sections 2 and 3, only to the indicated solid solution, without taking into account the contributions of all its other structural components, is an illegal occupation. Let us trace this, in particular, on two characteristic examples.
The first one relates to the data of the NGR-studies of the EuO : Fe composite (Fig.
It can be seen from this data that the position of the Fermi level does not coincide with the edge of the 4f-state band. Approximately 0.03 of the 4f-states (per europium atom) remain empty. On the other hand, it can be noted that the band of 3d-states of iron (with a negative value of the spin projection, spin-down) is asymmetric relative to the Fermi level, i.e., the number of states occupied by electrons (to the left of the Fermi energy) is somewhat larger (their zeroing corresponds to an energy of -0.15 eV) than the number of empty states in this zone (to the right of the Fermi energy, zeroing at 0.1 eV). Both of these circumstances indicate that there is actually a slight transfer of the electron density from the 4fEu2+ state to the 3dFe2+ state (about 0.03 electron per impurity Fe-node).
The latest calculations, like the vast majority of similar calculations by the methods of the electron density functional theory, refer to the temperature of T = 0 K. Obviously, a certain “smearing" of the Fermi level with increasing temperature roughly should be accompanied by a somewhat higher transfer of the electron density from 4fEu-states to 3dFe states. We note, however, that the number of electrons transferred as a result of this effect to iron ions will be proportional to its concentration in the matrix. It follows that for small (by the order of a few percent) degrees of substitution of europium atoms by iron atoms, one cannot expect that the concentration of Eu3+ ions will be comparable with the concentration of Eu2+ ions in the composite, as takes place in case of the experiment (Fig.
The second example concerns the experimental data of Fig.
Thus, the comparison of calculation results of the electronic band structure of the Eu1-xFeхO SS with the experimental data of the EuO : Fe spintronic composite, which is one of its structural constituents, is indicative of both surprisingly good agreement between each other and a correct and justified choice of theoretical model for doping a monoxide lattice, and the method used at calculating its electronic band structure.
It is shown that iron cations in the SS are at a high spin state, 1.7μB higher than the intrinsic magnetic moment of pure iron. It is also shown that iron and europium cations in the monoxide structure have an oxidation degree close to 2+. Both in pure and in Fe-doped monoxide, the states near the bottom of the conduction band (the 5d-state of europium) are 100% spin-polarized. It is shown that in Fe-doped monoxide there is an insignificant electron density transfer from Eu2+ ions to Fe2+ ions, but the main factor ensuring the presence of Eu3+ ions observed in the experiments is apparently the presence of Eu2O3 nanoclusters in the composite structure. Their presence, as well as the presence of superparamagnetic α-iron nanoparticles, apparently provide the samples of this composite in the bulk and thin-film states with long-term chemical stability and temporal stability of their physical parameters under normal conditions, as evidenced by the available experience with this spintronic material [
The above results of experimental and theoretical studies of the EuO : Fe ferromagnetic semiconductor composite served as the basis for modeling the operation of a spintronic contact device with its participation – as an electron injector (emitter) in a non-magnetic semiconductor n-GaAs (collector) capable of spin current transfer at room temperature. Such a structure can be used as the basis for the creation of a high-temperature field spin transistor [
The current-voltage characteristic of the contact structure in absence of external magnetic field and in the state of its magnetization in a field of H = 200 mT is shown in Fig.
If we consider the current through the collector in the unmagnetized state of the emitter as 100% charge current transfer (J0), then the degree of spin transfer (P) from the magnetized emitter (JH) can be estimated from the relation:
Р = (J0 – JH)/(J0 + JH). (3)
According to Fig.
The supply of voltage to the contact structure may well cause electronic transport from the injector and with a different spin orientation of the carriers. In addition, in this device, crystal-structural nonidentity of the injector and detector materials is also possible (the symmetry of the crystal cells and their parameters is different), which is also capable of being an additional cause of the spin flip at the boundary of the interface and a decrease of a degree of the spin current transfer, P. Even with such a minimum difference in the lattice parameters of the EuO (1) and GaAs (2) crystals, a1/a2 = 0.176 (or 17%). Nevertheless, remaining unusually high and record-breaking in terms of the degree of spintrance among the spintronic contacts created, it allows us to believe that using parameters of europium monoxide, which are record for ferromagnets, partially retained at high (room) temperatures in the EuO : Fe composite, the further prospect of implementing spin current transfer in such transistor becomes obvious [