Research Article |
Corresponding author: Oday A.H. Hassoon ( udaym082@gmail.com ) © 2025 Oday A.H. Hassoon, Odai N.S. Salman, Vladislav N. Mironyuk, Mikhail V. Pozharov, Tatiana Ya. Karatyshova, Andrey M. Zacharevich, Evgeny G. Glukhovskoy.
This is an open access article distributed under the terms of the Creative Commons Attribution License (CC BY 4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
Citation:
Hassoon OAH, Salman ONS, Mironyuk VN, Pozharov MV, Karatyshova TYa, Zakharevich AM, Glukhovskoy EG (2025) Production of photosensitive structures based on CdSe nanoparticles and carbon nanotubes by physical methods. Modern Electronic Materials 11(1): 3-11. https://doi.org/10.3897/j.moem.11.1.133978
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The paper shows the possibility of producing photosensitive structures using physical methods without the use of chemical synthesis and vacuum techniques. Suspensions of CdSe nanoparticles were produced by pulsed laser ablation in a liquid medium (chloroform), and layers of semiconductor material (CdSe) and conductive layers (carbon nanotubes) were formed at the gas-liquid interface and transferred to solid substrates by the Langmuir–Schaeffer method. The size of CdSe nanoparticles in the layers ranged from 60 nm to 200 nm, and the bandgap was 2.3 eV. Multilayer film structures consisting of a layer based on synthesized CdSe nanoparticles and a layer of conductive carbon nanotubes, that demonstrated photosensitivity in the optical region, were obtained. The value of current density under lighting at 1 V and –1 V equals 1.25 mA/cm2 and –1.35 mA/cm2, respectively. The maximum ratio of the illumination current density to the dark current value was 13.5 times (at a voltage of 1 V).
CdSe, conductive carbon nanotubes (CNTs), laser ablation, Langmuir–Blodgett technology, photodiode, semiconductor
Development of simpler and cheaper technological processes is one of the most important stages in the development cycle of any technology. This also applies to production techniques that can be used to obtain multilayer functional structures for photosensors and photoconversion devices. Technological processes that exclude the use of vacuum technology and involve only the most simple chemical processes that are less demanding on the purity of reagents are especially interesting for potential application.
Most methods can be classified as chemical or physical. Typical examples of methods of the first group are sol-gel synthesis, synthesis in micelles, chemical precipitation, etc. Such methods are difficult to implement, they often use expensive starting components and tools, in addition, the synthesis takes quite a long time. Physical methods (such as the molecular beam epitaxy method and other vacuum methods), as well as a group of physicochemical methods (which can include mechanochemical synthesis, solvothermal synthesis and synthesis in supercritical solvents) require special technological equipment and a combination of complex conditions – pressure, temperature, rate of deposition of materials on the substrate, duration of exposure to the material, creation of a special deposition/synthesis environment [
Laser ablation is a well-known method that involves ejection of macroscopic amounts of materials from a surface of a solid usually induced by the interaction of short (~10-13 to 10-8 s) and intense (~106 to 1014 W/cm2) laser pulses with the surface [
According to various sources [
Abd A.N. et al. [
Another promising physical method of production of nanosized film structures is Langmuir–Blodgett (LB) technique. There are many sources noting that this technique can become a suitable alternative to vacuum methods [
Amphiphilic properties and low solubility in water determine the stability of floating layers and their technological characteristics. To form a floating layer from materials that do not have amphiphilic properties, it is necessary to integrate these substances into amphiphilic matrices and prepare nanocomposites with the required parameters. This way allows the formation nanofilms containing such large objects as conductive carbon nanotubes (CNTs) [
Often, oleic acid or trioctylphosphine oxide are used as stabilizers and surfactant matrices for nanoparticles, and they are added at the NP synthesis stage. And, as a rule, the chemical synthesis of nanoparticles assumes the presence in the solution of an excess of surfactant that is not bound to the surface of the nanoparticles. But this is precisely the significant drawback of chemical synthesis methods. There is no way to accurately calculate the amount of free (i.e. not bound to the surface of the NP) surfactant in the solution. Therefore, an additional procedure to remove excess surfactant is often required. [
Returning to the LB method, one cannot ignore another important feature: it allows the application of conductive layers without creating short circuits. Of course, there are some difficulties and contradictory points here. Amphiphilic substances are usually dielectrics, but molecules of conducting materials do not have amphiphilic properties. To resolve these contradictions, composite compositions based on an amphiphilic matrix and a conductive component as inclusions are used, as mentioned above.
Such large nanosized objects as CNTs (if their surface has not been specifically modified) are hydrophobic, insoluble in water and at the same time are molecules that conduct electrical current well. This makes them a good choice for Langmuir layer formation. Of course, their complex structure and the lack of prominent amphiphilic properties makes it impossible to produce layers with high degree of order. But due to the chaotic interweaving of nanofibers, CNT layers have anisotropic structural and electrophysical properties. This allows avoiding additional problems associated with the manifestation of isotropy of electrophysical properties, which exists, for example, in sheet graphene. And the stability of the CNT layer can be increased by including in a surfactant matrix or additives that functionalize the CNT surface. Such functionalization leads to an increase in the solubility of CNTs in organic solvents, minimization of interactions between CNT molecules, and therefore to a more uniform distribution of molecules on the water surface and their greater order in the floating layer [
Floating layers of NPs or CNTs formed at the surfaces of a water subphase can be transferred to solid substrates using Langmuir–Blodgett or Langmuir–Schaeffer (LS) techniques (with horizontal or vertical substrate orientation during application, respectively). In this way, we can create CNT and NP films layer by layer, being able to control the individual composition and molecular organization of each layer at our discretion. [
The following achievements can be noted as some examples demonstrating the capabilities of the LB method. High stability of the layers formed on the surface of water and the local order of CNTs in films on solid substrates can be directly caused by the modification of the CNT surface with crown ethers. This also allows for the successful transfer of Langmuir layers of multi-layer and single-layer CNTs onto hydrophilic silicon substrates [
Thus, it can be seen that the interest in films based on NP and CNT is consistently high. This concerns both the preparation of solutions, the methods of formation and transfer of layers, and the influence of post-processing on the properties of these films. The aim of our research is to develop a technology for creating multilayer photosensitive structures based on CdSe nanoparticles and CNTs by combining PLAL with LS technique.
The initial reagents included CdSe powder with a particle size of 44–150 μm (CdSe medium, 99–99.999 wt.% purity, Hunan Fushel Technology Limited, China), multiwalled CNT (>95 wt.% purity; diameter ≈8–50 nm; length ~1–50 µm; ash <1.5 wt.%) acquired from CTI materials (GRAFTON Company, USA); chloroform with 99.95% purity (Component-Reactive, Russia), a square FTO (Fluorine-doped Tin Oxide) glass sample sheet with resistivity of ~10 Ω/sq. and an area of 2.25 cm2 size and a square silicon (p type <111> orientation) sheet with an area of 0.25 cm2 and resistivity 1–10 Ω·cm and thickness (400 µm).
The target was made by pressing 5 g of CdSe powder into a tablet with a diameter of 15 mm and a thickness of about 3 mm using a 5 t press. The tablet was placed to the bottom of a 25 ml glass beaker that was then filled with chloroform. The height of the chloroform layer above the tablet was close to 5 mm.
Irradiation was performed with a Nd:YAG laser at a energy of 700 mJ with wave length of 1064 nm, a pulse width of 10 ns, and a pulse train repetition rate set to 2 Hz. Laser ray (diameter – 1.2 mm) was focused from the source by a focusing lens onto a point on the target with approximate size 20 µm. The estimated radiation energy density at the focus was 0.22·106 J/cm2.
The suspension with CNTs was homogenized using the Hielscher Ultrasonics UP200Ht (Hielscher, Germany) handheld ultrasonic homogenizer operating at the output of 200W and frequency of 26 kHz.
The transmission and absorption spectra were registered with the Shimadzu UV-1800 spectrophotometer (Shimadzu, Japan). The photoluminescence spectra were recorded using the installation based on the Ocean Optics QE Pro-FL broadband spectrometer capable of recording PL spectra in the wavelength range of 380–1100 nm using the laser beam excitation at 410±10 nm KN2002 Langmuir–Blodgett (LB) troughs (KSV Nima, Finland) were used to transfer the layers to solid surfaces.
Characterization of surface morphology of samples with CdSe NPs and CNTs was performed with Mira II LMU Scanning Electron Microscope (SEM) (AztecLive Advanced Ultim Max 40 Inca Wave 500, TESCAN, Czech Republic) and Inspect F50 (Spain) Field Emission Scanning Electron Microscope (FESEM).
The samples reaction to lighting was studying by subjects the samples to Solar simulator LSS9000 IV characterization system (Fytronix Electronic Technologies, Turkey) as a white light source with density of luminosity ranging from 1 to 100 mW/cm2. The current-voltage curves (CVC) were registered with Agilent (Keysight) B1500A parameter analyzing equipment and PM-5 probe station. The module of the parameter analyzing equipment allowed making precise measurements with current resolving power of 10 fA (if the power source voltage is up to 100 V).
To produce a suspension of CdSe NPs, we put a pure CdSe tablet in 5 ml of chloroform and ablated it with 250 laser pulses over a period of 2 min. Then we left the solution for some time to let the heavier particles to sediment at the bottom of a glass beaker. After that, we transferred the homogenously gray supernatant containing lighter (nanosized) CdSe particles to another beaker and removed the residues of heavier particles from the beaker into a separate container. We rinsed the glass beaker which contained a CdSe tablet with chloroform, then returned the CdSe tablet; after that we poured fresh chloroform into the beaker and repeated the ablation process. We removed the newly formed suspension and added fresh chloroform instead. Then we repeated the procedure (Fig.
Then we added the tablet and chloroform to the container again and subjected it to ablation by another pulse. We repeated this procedure 20 times to produce 100 ml of NPs suspension.
Characteristic cracking and formation of a dense cloud above the CdSe table (Fig.
The CdSe films were deposited using the LS deposition technique. 100 µl of the suspension of CdSe in chloroform was applied drop-wise and distributed among the surface of aqueous subphase with the area of 243 cm2. After 7 min have passed and chloroform has completely evaporated, we compressed the layers of nanoparticles to the area of 5 cm2. After that, we transferred the layer to a horizontally oriented substrate using the LS method as shown in Fig.
We clearly observed the formation of a homogenous CdSe layer and successfully transferred it to the FTO substrate and silicon (Fig.
To further investigate the morphology of synthesized CdSe particles, we examined them with SEM. Scanning electron microscopy images demonstrated a good deposition and uniform distribution of CdSe composition in the multilayer structure. Scanning electron microscopy measurements clearly show that the size of CdSe nanoparticles range from 60 to 200 nm (Fig.
The results of energy dispersive X-ray analysis (EDX) shows that the average atomic percentage of Cd and Se atoms in CdSe film is approximately equal (see Fig.
Surface element mapping showed that the Cd и Se atoms are distributed unevenly with the maximal amount located inside larger nanosized objects (greater than than 60 nm in size); at the same time, close stoichiometric quantities of Cd and Se are observed in various nano- and submicron-sized objects. The EDX spectroscopy confirmed that the CdSe had been deposited on the substrate (Fig.
The absorption and transmission spectra (Fig.
A = 2 – logT,
where A is the absorbance, T is the transmittance, the results match the laboratory table and chart provided by Sigma–Aldrich [
∝ = 2.303(A/T).
Thus, we can see that minimal transmittance (57%) for ablated structure is observed at 400 nm.
The optical band gap Eg can be determined from the absorption coefficient α(hν). For this purpose we used the known Tauc relation for the direct optical transition between valence and conduction bands [
(αhν)2 = A (hν – Eg).
Figure
The optical bandgap energy Eg is deduced from extrapolation of the straight line to (αhν)2 = 0. The estimated energy gap value is 2.3 eV. This can attributed to the quantum confinement effect [
We can see, that the photoluminescence (PL) spectra of the ablated nanoparticles in thin films on solid substrates have two peaks at 700 nm (more intensive) and 531 nm (less intensive) (Fig.
Schematic diagram of the LS method (a) and isotherm CdSe layer on the water subfase (b): 1 – dipper, 2 – substrate holder, 3 – substrate (ITO/FTO coated glass plate); 4 – CdSe NPs layer; 5 – distilled water; 6 – surface tension sensor; 7 – Wilhelmy plate; 8 – movable barriers; 9 – Langmuir trough
Silicon substrate before (a) and after (b) deposition of thin films using LS method: CdSe thin films deposited to the silicon substrate
EDX analysis of Cd and Se atomic ratio Statistical characteristics of found atomic values
Detected elements | Label of the selected point | Statistics | ||||||
S1 | S2 | S3 | ||||||
Atomic (%) | Max | Min | Average | St. deviation | ||||
Se | 48.90 | 51.77 | 50.51 | 51.77 | 48.90 | 50.39 | 1.44 | |
Cd | 51.10 | 48.23 | 49.49 | 51.10 | 48.23 | 49.61 | 1.44 |
We used a two stage process to make CNT suspension. At the first stage, we dissolved 12·10-5 g of CNT powder in 0.01 l of chloroform. The concentration of resulting suspension was 12·10-3 g/l. In the second stage, we diluted 1 ml of the CNT suspension with 9 ml of chloroform. As a result, we produced a suspension with a concentration of 12·10-4 g/l, that was later used to obtain CNT films. To obtain a more homogenous suspension, we was placed it into a ultrasonic homogenizer for 15 min.
We added 200 µl of the suspension of CNTs in chloroform drop-wise to the surface of aqueous subphase with an area of 243 cm2 so that it disturbed evenly across the surface. After 7 min, which is necessary for the complete evaporation of chloroform, we compressed the layers of nanoparticles to the area of 5 cm2. After compressing, we transferred the layer to a horizontally oriented substrate using the LS technique as shown in Fig.
FESEM analysis showed a homogenous distribution of CNT thin films at solid substrate. Due to the effect of homogenizer, the final suspension was deposited on the water surface and the compression barrier was used to produce a homogenous thin film of CNTs. Fig.
We have engineered a device consisting of CNT/CdSe/p-Si (111) junction diode. The CVC characteristics of the multylayer structures are shown in Fig.
Thus, we successfully produced photosensitive film structures consisting of CdSe NP layer (active layer) and CNT layer (counter electrode) obtained via Langmuir technique. The upper CNT layer had good conductivity – sufficient for a contact layer. At the same time, the application of the CNT layer did not lead to short-circuiting or any disruption of the structure of the NP layer located under the CNT layer (as is often the case when applying the upper contact by vacuum methods on single layers of nanoparticles with a thickness of several nanometers).
We successfully used PLAL to produce CdSe NPs for these structures and did not use any chemical synthesis techniques. Thus, we showed the possibility of producing nano-sized CdSe suspensions (with nanoparticle size ranging from 60 to 200 nm) in non-polar solvent without the need of a stabilizing agent.
The photocurrent density exceeds the dark current by 13.5 times at a voltage of 1 V. Thus, the obtained structures containing CdSe NPs and CNTs can be used in photoelectric devices, while elements of the presented production technique can be used to make potential photosensitive devices (such as photoresistors, photovoltaic equipment, and the like).
The study was supported by the Russian Science Foundation (project No. 21-73-20057) and Saratov State University, Russia.
Conflict of interest
The authors declare that they have no conflicts of interest.