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ICM SEM micrographs of dislocations [32]: (a) GaN with a donor concentration of 1015 cm–3; (b) GaN with a donor concentration of 1017 cm–3 |
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| Part of: Knyazev SN, Kudrya AV, Komarovskiy NY, Parkhomenko YuN, Molodtsova EV, Yushchuk VV (2022) Methods of dislocation structure characterization in AIIIBV semiconductor single crystals. Modern Electronic Materials 8(4): 131-140. https://doi.org/10.3897/j.moem.8.4.99385 |