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Effect of binarization with different thresholds on micrographs of (100) GaAs etch pits: (а) source image; (b) 160 threshold binarization; (c) 180 threshold binarization |
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| Part of: Knyazev SN, Kudrya AV, Komarovskiy NY, Parkhomenko YuN, Molodtsova EV, Yushchuk VV (2022) Methods of dislocation structure characterization in AIIIBV semiconductor single crystals. Modern Electronic Materials 8(4): 131-140. https://doi.org/10.3897/j.moem.8.4.99385 |