Tao Gong, Longqing Chen, Xiaoyi Wang, Yang Qiu, Huiyun Liu, Zixing Yang, Thomas Walther (2025)
Recent Developments in Transmission Electron Microscopy for Crystallographic Characterization of Strained Semiconductor Heterostructures.
Crystals15: 192.
DOI: 10.3390/cryst15020192
N. Yu. Komarovsky, E. V. Molodtsova, A. G. Belov, M. B. Grishechkin, R. Yu. Kozlov, S. S. Kormilitsina, E. O. Zhuravlev, M. S. Nestyurkin (2023)
Study of indium antimonide single crystals obtained by the modernized Chokhralsky method in several crystallographic directions.
Industrial laboratory. Diagnostics of materials89: 38.
DOI: 10.26896/1028-6861-2023-89-8-38-46
N. Yu. Komarovsky, E. O. Zhuravlev, E. V. Molodtsova, A. V. Kudrya, R. Yu. Kozlov, A. G. Belov, S. S. Kormilitsina (2024)
Determination of the criterion for the morphological classification of etching pits formed in InSb single crystals grown by the Czochralski method in the crystallographic direction [111] and doped with tellurium.
Industrial laboratory. Diagnostics of materials90: 32.
DOI: 10.26896/1028-6861-2024-90-7-32-39
Lu-lu Yu, Zhi-li Hu, Zhen-zhong Wang, Heng Wang (2025)
The effect of NaOH on the morphology of dislocation-related pits in SiC during etching in molten eutectic KOH-NaOH.
Materials Science in Semiconductor Processing192: 109437.
DOI: 10.1016/j.mssp.2025.109437
N. Yu. Komarovskii, E. V. Molodtsova, A. A. Trofimov, S. S. Kormilitsina, V. A. Ul’karov, M. S. Nestyurkin, A. A. Zarechenskaya, D. O. Tsaregorodtsev (2023)
Investigation of the Strength Properties of Single-Crystal InSb Depending on Crystallographic Orientation and Growth Conditions.
Journal of Communications Technology and Electronics68: S157.
DOI: 10.1134/S1064226923140097
Mykola S. Kukurudziak, Volodymyr M. Lipka (2023)
Influence of silicon characteristics on the parameters of manufactured photonics cells.
East European Journal of Physics
: 197.
DOI: 10.26565/2312-4334-2023-4-24
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