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Distribution of ion concentration in metallic barrier between two nearby copper lines. Input parameters: k = 2.3; d = 20 nm; potential difference ∆V = 1.1 V; D = 5.1 · 10-20 m2/s; T = 673 K |
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| Part of: Orlov AA, Rezvanov AA (2022) Simulation of time to failure of porous dielectric in advanced topology integrated circuit metallization system. Modern Electronic Materials 8(3): 107-111. https://doi.org/10.3897/j.moem.8.3.98145 |