Schematic of physical processes in simulated structure containing two nearby copper lines separated by dielectric [9]. Input parameters: T is temperature, D is metal atom diffusion coefficient in dielectric, k is dielectric permeability of dielectric and E is electric field magnitude between copper lines

 
 
  Part of: Orlov AA, Rezvanov AA (2022) Simulation of time to failure of porous dielectric in advanced topology integrated circuit metallization system. Modern Electronic Materials 8(3): 107-111. https://doi.org/10.3897/j.moem.8.3.98145