Comparison between results of optical and electrical measurements of free electron concentration in n-InAs specimens

Tatyana G.  Yugova; Aleksandr G. Belov; Vladimir E. Kanevskii; Evgeniya I. Kladova; Stanislav N. Knyazev; Irina B. Parfent'eva

doi:10.3897/j.moem.7.3.76700

Aleksandr G. Belov, Vladimir E. Kanevskii, Evgeniya I. Kladova, Stanislav N. Knyazev, Nikita Yu. Komarovskiy, Irina B. Parfent'eva, Evgeniya V. Chernyshova (2023)
Comparison between optical and electrical data on hole concentration in zinc-doped p-GaAs. Modern Electronic Materials 9: 69.

DOI: 10.3897/j.moem.9.2.109743

A. G. Belov, E. V. Molodtsova, S. S. Kormilitsina, R. Yu. Kozlov, E. O. Zhuravlev, S. A. Klimin, N. N. Novikova, V. A. Yakovlev (2024)
Determination of Conductivity Electron Concentration in Single-Crystalline n-GaSb Samples Using FIR Reflection Spectra at T = 295 K. Optics and Spectroscopy 132: 325.

DOI: 10.1134/S0030400X24040027

Aleksandr G. Belov, Vladimir E. Kanevskii, Evgeniya I. Kladova, Stanislav N. Knyazev, Nikita Yu. Komarovskiy, Irina B. Parfent'eva, Evgeniya V. Chernyshova (2023)
Comparison between optical and electrical data on hole concentration in zinc-doped p-GaAs. Modern Electronic Materials 9: 69.

DOI: 10.3897/j.moem.9.109743

A. G. Belov, V. E. Kanevskii, E. I. Kladova, S. N. Knyazev, N. Yu. Komarovskiy, I. B. Parfent’eva, E. V. Chernyshova (2023)
Comparison between optical and electrophysical data on hole concentration in zinc doped p-GaAs. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 26: 171.

DOI: 10.17073/1609-3577j.met202304.525

Yuri N. Parkhomenko, Aleksandr G. Belov, Elena V. Molodtsova, Roman Yu. Kozlov, Svetlana S. Kormilitsina, Eugene O. Zhuravlev (2022)
Correct determination of electron concentration in n-GaSb by electrical measurements. Modern Electronic Materials 8: 165.

DOI: 10.3897/j.moem.8.4.100756

Yu. N. Parkhomenko, A. G. Belov, E. V. Molodtsova, R. Yu. Kozlov, S. S. Kormilitsina, E. O. Zhuravlev (2023)
Correct determination of electron concentration in n–GaSb from Hall data. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 26: 36.

DOI: 10.17073/1609-3577-2023-1-36-45