Simulated I–V curves of hafnium oxide based memristor for two conductive filaments having cylindrical shapes (simulating HfOx phase) with radii rf of (a) 5 and (b) 10 nm. Red I–V curve branches correspond to HRS memristor operation mode and black one, to LRS memristor operation mode.

 
 
  Part of: Aleshin AN, Zenchenko NV, Ruban OA (2021) Simulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness. Modern Electronic Materials 7(2): 45-51. https://doi.org/10.3897/j.moem.7.2.73289