Basic schematic of trichlorosilane anti-disproportioning process [51]: (1) tetrachlorsilan (SiCl4) flow; (2) dichlorosilane (SiH2Cl2) flow; (3) gaseous trichlorosilane flow; (4) reflux liquid (mainly trichlorosilane), (5) final product (pure trichlorosilane), (6, 8) product pipelines (mainly tetrachlorosilane), (7) evaporated tetrachlorosilane pipeline, (9) high boiling point residual fraction output, (10) aberage boiling point product, (11) cooled tetrachlorosilane, (12) top rectifying section, (13) middle section (reaction zone) with a catalyst head, (14) stripper column section, (15) reflux column, (16) reboiler, (17) separating refrigerator, (18) low-temperature refrigerator, (19) reactive distillation column.

 
 
  Part of: Jarkin VN, Kisarin OA, Kritskaya TV (2021) Methods of trichlorosilane synthesis for polycrystalline silicon production. Part 2: Hydrochlorination and redistribution. Modern Electronic Materials 7(2): 33-43. https://doi.org/10.3897/j.moem.7.2.65572