Hall voltage and channel current dependences on gate bias Vg for different gate bias modes and different FHS power voltages Vd at B = 50 mT: (а): Vd = 5 V; (1) Vg = Vg1, Vg2 = 0 V; (2) Vg = Vg2, Vg1 = 0 V; (3) Vg = Vg1 = Vg; (b): Vd = 10 V; (1) Vg = Vg1, Vg2 = 0 V; (2) Vg = Vg2, Vg1 = 0 V; (3) Vg = Vg1 = Vg

 
 
  Part of: Leonov AV, Murashev VN, Ivanov DN, Kirilov VD (2020) Coupling effect in field Hall elements based on thin-film SOI MOS transistors. Modern Electronic Materials 6(4): 155-158. https://doi.org/10.3897/j.moem.6.4.65567