Dependence of NHall/Nopt ratio on NHall.

 
 
  Part of: Yugova TG, Belov AG, Kanevskii VE, Kladova EI, Knyazev SN (2020) Comparison between optical and electrophysical data on free electron concentration in tellurium doped n-GaAs. Modern Electronic Materials 6(3): 85-89. https://doi.org/10.3897/j.moem.6.3.64492