Comparison between optical and electrophysical data on free electron concentration in tellurium doped n-GaAs

Tatyana G. Yugova; Aleksandr G. Belov; Vladimir E. Kanevskii; Evgeniya I. Kladova; Stanislav N. Knyazev

doi:10.3897/j.moem.6.3.64492

Research Article

Modern Electronic Materials 6(3): 85-89
https://doi.org/10.3897/j.moem.6.3.64492 (30 Sep 2020)

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Tatyana G. Yugova, Aleksandr G. Belov, Vladimir E. Kanevskii, Evgeniya I. Kladova, Stanislav N. Knyazev, Irina B. Parfent'eva (2021)
Comparison between results of optical and electrical measurements of free electron concentration in n-InAs specimens. Modern Electronic Materials 7: 79.

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Determination of Conductivity Electron Concentration in Single-Crystalline n-GaSb Samples Using FIR Reflection Spectra at T = 295 K. Optics and Spectroscopy 132: 325.

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Comparison between optical and electrophysical data on hole concentration in zinc doped p-GaAs. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 26: 171.

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T. G. Yugova, A. G. Belov, V. E. Kanevskii, E. I. Kladova, S. N. Knyazev, I. B. Parfent'eva (2021)
Comparison between optical and electrophysical data on free electron concentration in n-InAs samples. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 24: 153.

DOI: 10.17073/1609-3577-2021-3-153-161

Yuri N. Parkhomenko, Aleksandr G. Belov, Elena V. Molodtsova, Roman Yu. Kozlov, Svetlana S. Kormilitsina, Eugene O. Zhuravlev (2022)
Correct determination of electron concentration in n-GaSb by electrical measurements. Modern Electronic Materials 8: 165.

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