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The behavior of the integrands in formulas (5) for the indicated T and structure with a 2DEG in which d = 25 nm, z = 45 nm, nσ = 5 · 1011 cm-2. |
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| Part of: Tkachenko VA, Tkachenko OA, Baksheev DG, Sushkov OP (2020) Effect of surface charge self-organization on gate-induced 2D electron and hole systems. Modern Electronic Materials 6(3): 101-106. https://doi.org/10.3897/j.moem.6.3.63361 |