Optimization of passivation in AlGaN/GaN heterostructure microwave transistor fabrication by ICP CVD

Anastasia A. Sleptsova; Sergey V. Chernykh; Dmitry A. Podgorny; Ilya A. Zhilnikov

doi:10.3897/j.moem.6.2.58860

Research Article

Modern Electronic Materials 6(2): 71-75
https://doi.org/10.3897/j.moem.6.2.58860 (15 Jul 2020)

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F. Chiocchetta, C. De Santi, F. Rampazzo, K. Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, A. Gerosa, G. Meneghesso, E. Zanoni, M. Meneghini (2022)
Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 μm AlGaN/GaN HEMTs. Microelectronics Reliability 138: 114735.

DOI: 10.1016/j.microrel.2022.114735

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