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Research Article
Modern Electronic Materials 6(1): 37-45
https://doi.org/10.3897/j.moem.6.1.55056 (30 Mar 2020)
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  • 1. Introduction
  • 2. "Full" simulation based on physicochemical principles
  • 3. Use of "compact" models in resist mask contour computation for full-scale product topology
  • 4. Lithographic stack layers thickness optimization
  • 5. VT5 model calibration for optical proximity correction (OPC) procedure
  • 6. Conclusion
  • References
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