Schematic of single crystal growth in inert gas flow: (1) growing single crystal, (2) heat screens, (3) resistive heater, (4) crucible with silicon melt, (5) growth chamber gas removal port, Ar-1 argon gas flow circumventing the growing crystal (15–20 nl/min), Ar-2 argon gas flow in the form of jets (1.5–2.0 nl/min)

 
 
  Part of: Kritskaya TV, Zhuravlev VN, Berdnikov VS (2020) Potential of using inert gas flows for controlling the quality of as-grown silicon single crystal. Modern Electronic Materials 6(1): 1-7. https://doi.org/10.3897/j.moem.6.1.53248