Regularities of microdefect formation in silicon during heat treatment for internal getter synthesis


	X-ray diffuse scattering intensity distribution for Si Specimen 2 as-annealed at 650 °C (2 h) + 1000 °C (16 h): (a) reciprocal space map; (b) asymmetrical X-ray diffuse scattering component.

Part of: Bublik VT, Voronova MI, Shcherbachev KD, Mezhennyi MV, Reznik VYa (2019) Regularities of microdefect formation in silicon during heat treatment for internal getter synthesis. Modern Electronic Materials 5(3): 133-139. https://doi.org/10.3897/j.moem.5.52812