Regularities of microdefect formation in silicon during heat treatment for internal getter synthesis


	(a) qx and (b) qz reciprocal space map sections for Si specimens after different heat treatments: (1) 650 °C (40 h); (2) 650 °C (16 h) + 1000 °C (0.5 h); (3) 650 °C (2 h) + 1000 °C (16 h); (4) 650 °C (16 h) + 1000 °C (16 h); (5) instrumental function.

Part of: Bublik VT, Voronova MI, Shcherbachev KD, Mezhennyi MV, Reznik VYa (2019) Regularities of microdefect formation in silicon during heat treatment for internal getter synthesis. Modern Electronic Materials 5(3): 133-139. https://doi.org/10.3897/j.moem.5.52812