X-ray diffuse scattering intensity distribution for Si Specimen 1 as-annealed at 650 °C (40 h): (a) reciprocal space map (diffuse scattering isointensity contours and pseudopeak); (b) and (c) asymmetrical and symmetrical X-ray diffuse scattering components, respectively.

 
 
  Part of: Bublik VT, Voronova MI, Shcherbachev KD, Mezhennyi MV, Reznik VYa (2019) Regularities of microdefect formation in silicon during heat treatment for internal getter synthesis. Modern Electronic Materials 5(3): 133-139. https://doi.org/10.3897/j.moem.5.52812