Study of the effect of local photon annealing on stress in silicon wafers


	X-ray diffraction intensity maps near Si (400) site for Specimens (a and b) 1 and (c and d) 3: (a and c) before and (b and d) after treatmen

Part of: Starkov VV, Gosteva EA, Irzhak DV, Roshchupkin DV (2019) Study of the effect of local photon annealing on stress in silicon wafers. Modern Electronic Materials 5(3): 141-144. https://doi.org/10.3897/j.moem.5.52500