Effect of low-energy electron irradiation on voltage-capacity curves of Al/SiO2/Si structure


	Variation of C–V curves of test MOS structure (1) before irradiation and (2–5) after irradiation with different bias: (2) +10 V, (3) 0, (4) –10 V and (5) –20 V. Irradiation dose: 20 µCl/cm2.

Part of: Kulanchikov YO, Vergeles PS, Yakimov EB (2019) Effect of low-energy electron irradiation on voltage-capacity curves of Al/SiO₂/Si structure. Modern Electronic Materials 5(4): 175-179. https://doi.org/10.3897/j.moem.5.4.52311