Effect of low-energy electron irradiation on voltage-capacity curves of Al/SiO2/Si structure


	C–V curves of test MOS structure (1) before and (2) after irradiation. Acceleration voltage is of 2.5 keV, beam current of 1 nA and irradiation dose of 15 µCl/cm2.

Part of: Kulanchikov YO, Vergeles PS, Yakimov EB (2019) Effect of low-energy electron irradiation on voltage-capacity curves of Al/SiO₂/Si structure. Modern Electronic Materials 5(4): 175-179. https://doi.org/10.3897/j.moem.5.4.52311