Micrographs of spherical cross-sections of epitaxial structures on substrates (a) without ion doping and (b) after preliminary implantation of C ions at a carbon to oxygen ion dose ratio of 1 : 4.

  Part of: Aleshin AN, Enisherlova KL (2019) Physicochemical fundamentals of phase formation in silicon layers implanted with oxygen and carbon. Modern Electronic Materials 5(2): 77-85. https://doi.org/10.3897/j.moem.5.2.51365