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Two hemispeheres of SiO2 precipitates growing at the walls of planar defects. Ψ is the contact angle and r is the hemisphere radius. |
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| Part of: Aleshin AN, Enisherlova KL (2019) Physicochemical fundamentals of phase formation in silicon layers implanted with oxygen and carbon. Modern Electronic Materials 5(2): 77-85. https://doi.org/10.3897/j.moem.5.2.51365 |