Physicochemical fundamentals of phase formation in silicon layers implanted with oxygen and carbon


	(1 and 2) C and (3 and 4) O depth profiles in the implanted layer (1 and 3) before and (2 and 4) after annealing at 1200 °C for 2 h. Carbon ion dose 6 × 1014 1/cm2 oxygen ion dose 2.4 × 1015 1/cm2.

Part of: Aleshin AN, Enisherlova KL (2019) Physicochemical fundamentals of phase formation in silicon layers implanted with oxygen and carbon. Modern Electronic Materials 5(2): 77-85. https://doi.org/10.3897/j.moem.5.2.51365