Physicochemical fundamentals of phase formation in silicon layers implanted with oxygen and carbon


	Secondary C ion depth profiles for implanted Si layers (1) before and (2) after annealing at 1200 °C for 4 h: (a) C+, dose 3.0 × 1015 1/cm2; (b) C+, 6 × 1014 1/cm2 + O+, 2.4 × 1015 1/cm2.

Part of: Aleshin AN, Enisherlova KL (2019) Physicochemical fundamentals of phase formation in silicon layers implanted with oxygen and carbon. Modern Electronic Materials 5(2): 77-85. https://doi.org/10.3897/j.moem.5.2.51365