Planar TEM micrograph of silicon surface layer (moving toward the middle of the ion implanted layer, (a–c)) with interstitial dislocation loops after C and O implantation at a carbon to oxygen dose ratio of 1 : 4 followed by annealing at 1200 °C for 2 h.

  Part of: Aleshin AN, Enisherlova KL (2019) Physicochemical fundamentals of phase formation in silicon layers implanted with oxygen and carbon. Modern Electronic Materials 5(2): 77-85.