(a and b) Micrographs of defects in ion implanted silicon layers as-annealed at 1200 °C and (c) a schematic of planar defect arrangement in Fig. (b): (a) O+, dose 2.4 × 1015 1/cm2; (b) C+, 2.1 × 1015 1/cm2 + O+, 6 × 1014 1/cm2.

  Part of: Aleshin AN, Enisherlova KL (2019) Physicochemical fundamentals of phase formation in silicon layers implanted with oxygen and carbon. Modern Electronic Materials 5(2): 77-85. https://doi.org/10.3897/j.moem.5.2.51365