Physicochemical fundamentals of phase formation in silicon layers implanted with oxygen and carbon


	Diffraction curves after ion implantation: (a) O+, dose 6 × 1014 1/cm2; (b) C+, 1.2 × 1015 1/cm2; (c) C+, 6 × 1014 1/cm2 + O+, 1.8 × 1015 1/cm2.

Part of: Aleshin AN, Enisherlova KL (2019) Physicochemical fundamentals of phase formation in silicon layers implanted with oxygen and carbon. Modern Electronic Materials 5(2): 77-85. https://doi.org/10.3897/j.moem.5.2.51365