Physicochemical fundamentals of phase formation in silicon layers implanted with oxygen and carbon

Andrey N. Aleshin; Kira L. Enisherlova

doi:10.3897/j.moem.5.2.51365

Research Article

Modern Electronic Materials 5(2): 77-85
https://doi.org/10.3897/j.moem.5.2.51365 (01 Jun 2019)

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A. N. Aleshin, O. A. Ruban (2022)
Temperature-Frequency Study of Germanium Selenide Memristors with a Self-Directed Current-Conducting Channel. Russian Microelectronics 51: 59.

DOI: 10.1134/S1063739722020020

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