XRDS scattering intensity distribution along qz║[111] direction for two points of GaAs(Si) specimen section (n = 4.8·1018 cm–3) near the [[333]] site: (1) Region where dislocation loops were observed; (2) region where dislocation loops were not observed.

 
 
  Part of: Bublik VT, Voronova MI, Shcherbachev KD (2018) Capabilities of X-ray diffuse scattering method for study of microdefects in semiconductor crystals. Modern Electronic Materials 4(4): 125-134. https://doi.org/10.3897/j.moem.4.4.47197