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Typical XRDS scattering intensity distribution for GaP and GaAs crystals grown from Ga excess melt: (a) ingot beginning, (b) middle and (c) end. |
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| Part of: Bublik VT, Voronova MI, Shcherbachev KD (2018) Capabilities of X-ray diffuse scattering method for study of microdefects in semiconductor crystals. Modern Electronic Materials 4(4): 125-134. https://doi.org/10.3897/j.moem.4.4.47197 |