(a) lattice parameter and (b) XRDS intensity for InP specimen as a function of Bragg angle deviation at different annealing temperatures: (a) (1) fluence 2.3·1019 cm–2; (2) 5.3·1017 cm–2; (b) fluence 2.3·1019 cm–2: (1) Tann = 200 °C; (2) 300; (3) 500.

 
 
  Part of: Bublik VT, Voronova MI, Shcherbachev KD (2018) Capabilities of X-ray diffuse scattering method for study of microdefects in semiconductor crystals. Modern Electronic Materials 4(4): 125-134. https://doi.org/10.3897/j.moem.4.4.47197