InP lattice parameter as a function of major carrier concentration (1) before and (2) after neutron irradiation at 2.3·1019 cm–2 fluence (thermal and rapid neutron fluence ratio is 1).

 
 
  Part of: Bublik VT, Voronova MI, Shcherbachev KD (2018) Capabilities of X-ray diffuse scattering method for study of microdefects in semiconductor crystals. Modern Electronic Materials 4(4): 125-134. https://doi.org/10.3897/j.moem.4.4.47197