(a) XRDS scattering intensity distribution along the qz cross-section of reciprocal space for fast neutron irradiated InSb(Te) crystal at 1.3·1018 cm-2 fluence (1) before and (2) after heat treatment at different temperatures and (b) lattice parameter of InSb single crystals with different initial carrier concentration irradiated with neutrons at different fluencies F as a function of subsequent heat treatment temperature: (a) (1) before heat treatment, (2) after heat treatment at 150 °C, (3) at 200 °C and (4) at 300 °C; (b) (1) InSb(Te), n0 = 4·1014 cm-3, Ffn = 1.3·1018 cm-2; (2) InSb(Mn), p0 =5·1013 cm-3, Ffn = 5·1017 cm-2; (3) InSb(Te), n0 = 1.7·1015 cm-3, Fsn = 4.3·1017 cm-2.

 
 
  Part of: Bublik VT, Voronova MI, Shcherbachev KD (2018) Capabilities of X-ray diffuse scattering method for study of microdefects in semiconductor crystals. Modern Electronic Materials 4(4): 125-134. https://doi.org/10.3897/j.moem.4.4.47197