XRDS scattering intensity distribution along the qz cross-section of the diffuse scattering iso-intensity curve for the [[224] site of fast neutron irradiated InSb crystals at different fluencies φt, cm–2: (1) initial crystal; (2) fluence 5 × 1016 cm–2; (3) 5 × 1017 cm–2; (4) 1.3 × 1018 cm–2.

 
 
  Part of: Bublik VT, Voronova MI, Shcherbachev KD (2018) Capabilities of X-ray diffuse scattering method for study of microdefects in semiconductor crystals. Modern Electronic Materials 4(4): 125-134. https://doi.org/10.3897/j.moem.4.4.47197