XRDS scattering intensity distribution near the [[400]] site for silicon single crystal after homogenizing annealing at 1000 °C and annealing at 450 °C (16 h): (a) experimental iso-intensity curve, (b) symmetrical component and (c) asymmetrical component. XRDS intensity for the iso-intensity curves varies in the 0.5–9.5 cps range with a 1.0 cps step.

 
 
  Part of: Bublik VT, Voronova MI, Shcherbachev KD (2018) Capabilities of X-ray diffuse scattering method for study of microdefects in semiconductor crystals. Modern Electronic Materials 4(4): 125-134. https://doi.org/10.3897/j.moem.4.4.47197