Use of atomic force microscope for the synthesis of GaAs/AlGaAs heterostructure base one-dimensional structure


	Sample conductance G (solid curve), channel conductance without allowance for contact resistance (dot-and-dash curve) and dG/dU derivative (dashed curve)) as a function of gate voltage UG, used for more accurate quantization step positioning.

Part of: Stepushkin MV, Kostishin VG, Sizov VE, Temiryazev AG (2018) Use of atomic force microscope for the synthesis of GaAs/AlGaAs heterostructure base one-dimensional structure. Modern Electronic Materials 4(4): 163-166. https://doi.org/10.3897/j.moem.4.4.47093