Contact and contactless porous silicon parameter measurement techniques


	Contactless technique electrical resistivity distribution along quadrate diagonal for textured specimens with (a) 10 min and (b) 15 min etched porous silicon layer.

Part of: Latukhina NV, Kobeleva SP, Rogozhina GA, Shishkin IA, Schemerov IV (2018) Contact and contactless porous silicon parameter measurement techniques. Modern Electronic Materials 4(4): 143-150. https://doi.org/10.3897/j.moem.4.4.39503