Macro (top) and micro (bottom) distribution of structural defects in (a) as-grown specimen and (b) specimen after heat treatment in a chlorine-containing atmosphere [25]. Heat treatment parameters: 1200 °C, 8 min, H2 + HCl atmosphere.

 
 
  Part of: Kharchenko VA (2019) Getters in silicon. Modern Electronic Materials 5(1): 1-11. https://doi.org/10.3897/j.moem.5.1.38575