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(a, b) Microdefects in zone melting grown single crystal silicon and (c, d) dislocation generation under pressure [21]: (a) A type microdefects; (b) B type microdefects. |
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| Part of: Kharchenko VA (2019) Getters in silicon. Modern Electronic Materials 5(1): 1-11. https://doi.org/10.3897/j.moem.5.1.38575 |