Change in size of oxidation induced stacking faults after heat treatment in (1) argon and (2) hydrogen and (3, 4) thermal oxidation [25]. Heat treatment temperatures, °C: (1, 3) 1100 °C; (2, 4) 1150 °C.

 
 
  Part of: Kharchenko VA (2019) Getters in silicon. Modern Electronic Materials 5(1): 1-11. https://doi.org/10.3897/j.moem.5.1.38575