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(a, b) boron and (c, d) phosphorus distributions over silicon ingot length: (b, d) initial establishing stage: (1) without special melt zone doping (C1 = C2 = CS/k); (2) with additional doping of zone under AHP heater (C2 = CS, C1 = C2/k). |
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| Part of: Gonik MA, Baltaretu F (2018) Problem of attaining constant impurity concentration over ingot height. Modern Electronic Materials 4(2): 41-51. https://doi.org/10.3897/j.moem.4.2.38536 |