|
||
|
Typical phase boundary rate V change pattern for (a) germanium melt layer solidification and (b) phosphorus distribution for silicon crystallization at variable rate V = V0(1 – 0,5x0.3) |
|
||||||||
| Part of: Gonik MA, Baltaretu F (2018) Problem of attaining constant impurity concentration over ingot height. Modern Electronic Materials 4(2): 41-51. https://doi.org/10.3897/j.moem.4.2.38536 |